BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93CF Respectively 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V IC Collector Current (DC) -12 A ICP Collector Current (Pulse) * -15 A IB Base Current -0.2 A PC Collector Dissipation (TC = 25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions VCEO(sus) Collector-Emitter Sustaining Voltage IC -100mA, IB = 0 ICBO Collector Cut-off Current VCB = -100V, IE = 0 ICEO Collector Cut-off Current VVCE = -100V, IB = 0 Min. Typ. Max Units -100 µA -1 mA -2 mA -100 V IEBO Emitter Cut-off Current VEB = -5V, IC = 0 hFE DC Current Gain * VCE = -3V, IC = -3A VCE = -3V, IC = -5A VCE = -3V, IC = -10A VCE(sat) Collector-Emitter Saturation Voltage * IC = -5A, IB = -20mA IC = -10A, IB = -100mA -2 -3 V V VBE(sat) Base-Emitter Saturation Voltage * IC = -5A, IB = -20mA IC = -10A, IB = -100mA -2.5 -4 V V VF Parallel Diode Forward Voltage * IF = -5A IF = -10A -2 -4 V V 1000 750 100 20000 -1.3 -1.8 * Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed ©2005 Fairchild Semiconductor Corporation BDW94CF Rev. A 1 www.fairchildsemi.com BDW94CF PNP Epitaxial Silicon Transistor July 2005 Device Marking Device Package Reel Size Tape Width Quantity BDW94CF BDW94CF TO-220F - - 50 Typical Performance Characteristics Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 100k -10 VCE(sat) [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = -3V 10k 1k 100 -0.1 -1 -10 IC= 250 IB -1 -0.1 -0.1 -100 IC [A], COLLECTOR CURRENT -1 -10 IC [A], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance -20 1000 f=1MHz IE=0 VCE= -3V -16 Cob[pF], CAPACTIANCE IC [A], COLLECTOR CURRENT -100 -12 -8 -4 -0 -0.0 -0.8 -1.6 -2.4 -3.2 10 -4.0 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE VBE [V], BASE-EMITTER VOLTAGE BDW94CF Rev. A 100 2 www.fairchildsemi.com BDW94CF PNP Epitaxial Silicon Transistor Package Marking and Ordering Information BDW94CF PNP Epitaxial Silicon Transistor Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters BDW94CF Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 4 BDW94CF Rev. A www.fairchildsemi.com BDW94CF PNP Epitaxial Silicon Transistor TRADEMARKS