MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V ICEX Collector Cut-off Current VCE = 30V, VEB = 3V hFE DC Current Gain * VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA 50 40 70 100 60 30 nA 300 VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VBE(sat) Base-Emitter Saturation Voltage * IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Cob Output Capacitance VCB = 5V, IE = 0, f = 1MHz fT Current Gain-Bandwidth Product VCE = 20V, IC = 10mA, f = 100MHz NF Noise Figure IC = 100µA, VCE = 5V, RS = 1KΩ f = 10Hz to 15.7KHz 5 dB tON Turn On Time VCC = 3V, VBE = 0.5V IC = 10mA, IB1 = 1mA 70 ns tOFF Turn Off Time VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA 250 ns 0.65 0.2 0.3 V V 0.85 0.95 V V 4 pF 300 MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2005 Fairchild Semiconductor Corporation MMBT3904K Rev. A 1 www.fairchildsemi.com MMBT3904K NPN Epitaxial Silicon Transistor February 2005 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. DC current Gain 240 VCE = 1V hFE, DC CURRENT GAIN 200 160 120 80 40 0 0.1 1 10 100 10 IC = 10 IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.1 Figure 3. Output Capacitance 10 100 Figure 4. Current Gain Bandwidth Product 10 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 1 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 1 0.1 1 10 100 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE 2 MMBT3904K Rev. A VCE = 20V www.fairchildsemi.com MMBT3904K NPN Epitaxial Silicon Transistor Typical Performance Characteristics MMBT3904K NPN Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 3 MMBT3904K Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 MMBT3904K Rev. A www.fairchildsemi.com MMBT3904K NPN Epitaxial Silicon Transistor TRADEMARKS