KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement to KSP55/56 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSP05 : KSP06 60 80 V V : KSP05 : KSP06 60 80 V V Collector Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 4 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSP05 : KSP06 Test Condition IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 ICBO Collector Cut-off Current : KSP05 : KSP06 Min. ICEO Collector Cut-off Current VCE=60V, IB=0 DC Current Gain VCE=1V, IC=10mA VCE=1V, IC=100mA Units 60 80 V V 4 V VCB=60V, IE=0 VCB=80V, IE=0 hFE Max. 0.1 0.1 µA µA 0.1 µA V 50 50 VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.25 VBE (on) Base-Emitter On Voltage VCE=1V, IC=100mA 1.2 fT Current Gain Bandwidth Product VCE=2V, IC=10mA f=100MHz 100 V MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP05/06 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 1V 100 10 1 10 100 1000 10 IC = 10 IB V BE(sat) 1 0.1 VCE(sat) 0.01 1 IC[mA], COLLECTOR CURRENT 100 10 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.2 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT IC [µA], COLLECTOR CURRENT VCE = 1V 0.4 1000 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 0.2 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain 1 0.0 10 1000 VCE = 2V 100 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A2, September 2002 KSP05/06 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1