BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units VCER Collector-Emitter Voltage at RBE=1KΩ -60 V VCES Collector-Emitter Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A ICP Peak Collector Current -1.5 A IB Base Current -100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Typ. Max. ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA hFE1 hFE2 hFE3 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz BC638 Rev. C2 1 -60 Units Collector-Emitter Breakdown Voltage ©2005 Fairchild Semiconductor Corporation IC= -10mA, IB=0 Min. BVCEO V 25 40 25 160 -0.5 -1 100 V V MHz www.fairchildsemi.com Device Marking Device BC638 BC638BU TO-92 BC638 BC638TA TO-92 BC638 BC638TF TO-92 -- -- 2,000 BC638 BC638TFR TO-92 -- -- 2,000 BC638 Rev. C2 Package Reel Size 2 Tape Width Quantity -- -- 10,000 -- -- 2,000 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Figure 1. Static Characteristic -500 Figure 2. DC Current Gain 1000 IB = - 1.8 mA VCE = - 2V IB = - 1.4 mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = - 1.6 mA -400 IB = - 1.2 mA IB = - 1.0 mA -300 IB = - 0.8 mA IB = - 0.6 mA -200 IB = - 0.4 mA -100 -0 IB = - 0.2 mA -0 -10 -20 -30 -40 100 10 -50 -1 -100 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 -1000 IC[mA], COLLECTOR CURRENT IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -0.01 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -1 -10 -100 VCE = - 2V -100 -10 -1 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance 100 Cob[pF], CAPACITANCE f=1MHz 10 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE BC638 Rev. C2 3 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC638 PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] (0.25) +0.10 0.38 –0.05 0.38 –0.05 ±0.20 3.86MAX 3.60 1.02 ±0.10 +0.10 1.27TYP [1.27 ±0.20] (R2.29) Dimensions in Millimeters BC638 Rev. C2 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 BC638 Rev. C2 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor TRADEMARKS