MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2 TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -0.1mA, IE = 0 -40 V BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -40 V BVEBO Emitter-Base Breakdown Voltage IE = -0.1mA, IC = 0 -5 IBEV Base Cut-off Current VCE = -35V, VBE = -0.4V ICEX Collector Cut-off Current VCE = -35V, VBE = -0.4V hFE DC Current Gain VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1.0mA VCE = -1V, IC = -10mA VCE = -2V, IC = -150mA * VCE = -2V, IC = -500mA * 30 60 100 100 20 V -0.1 µA -0.1 µA 300 VCE (sat) Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VBE (sat) Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA fT Current Gain Bandwidth Product IC = -20mA, VCE = -10V, f = 100MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 140KHz 8.5 pF tON Turn On Time VCC = -30V, VBE = -2V IC = -150mA, IB1 = -15mA 35 ns tOFF Turn Off Time VCC = -30V, IC = -150mA IB1 = IB2= -15mA 255 ns -0.75 -0.4 -0.75 V V -0.95 -1.3 V V 200 MHz * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2005 Fairchild Semiconductor Corporation MMBT4403K Rev. A 1 www.fairchildsemi.com MMBT4403K PNP Epitaxial Silicon Transistor February 2005 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. DC current Gain hFE, DC CURRENT GAIN 1000 VCE = -2V 100 10 -1 -10 -100 -10 IC = 10 IB -1 VBE(sat) -0.1 VCE(sat) -0.01 -1 -1000 IC[mA], COLLECTOR CURRENT -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance 100 f = 140KHz IE = 0 VCE = -10V COb[pF], CAPACITANCE IC[mA], COLLECTOR CURRENT -100 -10 -1 -0.0 10 1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -1.4 VBE[V], BASE-EMITTER VOLTAGE -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 5. Current Gain Bandwidth Product 1000 VCE = -10V 100 10 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT 2 MMBT4403K Rev. A www.fairchildsemi.com MMBT4403K PNP Epitaxial Silicon Transistor Typical Performance Characteristics MMBT4403K PNP Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 3 MMBT4403K Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 MMBT4403K Rev. A www.fairchildsemi.com MMBT4403K PNP Epitaxial Silicon Transistor TRADEMARKS