DA121TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Continuous Reverse Voltage VR 80 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current Pulse Width = 10 ms 3 CATHODE 1 ANODE 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C RqJA 345 °C/W TJ, Tstg −55 to +150 °C 2 1 PD RqJA SOT−416 / SC−75 CASE 463 STYLE 2 MARKING DIAGRAM PD Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad 6A M G G 1 6A = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † DA121TT1 SOT−416 3000 / Tape & Reel DA121TT1G SOT−416 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 2 1 Publication Order Number: DA121TT1/D DA121TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − − − 715 866 1000 1250 − − − 1.0 50 30 Unit Forward Voltage − (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current − (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance − (VR = 0, f = 1.0 MHz) CD − 2.0 pF Reverse Recovery Time − (IF = IR = 10 mA, RL = 50 W) (Figure 1) trr − 6.0 ns Stored Charge − (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) QS − 45 PC Forward Recovery Voltage − (IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V 1 ns MAX mV mA 10% DUT 500 W t trr tif 50 W DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit VC 500 W DUT D1 t 10% Qa VCM + C 243 pF 100 KW DUTY CYCLE = 2% OSCILLOSCOPE R . 10 MW C 3 7 pF t 90% Vf BAW62 VCM 20 ns MAX 400 ns Figure 2. Recovery Charge Equivalent Test Circuit V 120 ns V 1 KW 450 W 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 2 50 W DA121TT1 10 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) 8 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 7. Normalized Thermal Response http://onsemi.com 3 10 100 1000 DA121TT1 PACKAGE DIMENSIONS SC−75 (SOT−416) CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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