MMVL3700T1 High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic surface mount package for economical, high−volume consumer and industrial requirements. http://onsemi.com SILICON PIN SWITCHING DIODE Features • Long Reverse Recovery Time: trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction 1 CATHODE for Optimum Reliability 2 ANODE • Low Series Resistance @ 100 MHz: RS = 0.7 W (Typ) @ IF = 10 mAdc 2 • Reverse Breakdown Voltage = 200 V (Min) • Pb−Free Package is Available 1 PLASTIC SOD−323 CASE 477 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 200 Vdc Peak Forward Current IF 20 mAdc Symbol Max Unit 200 1.57 mW mW/°C RqJA 635 °C/W TJ, Tstg 150 °C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad 4R M G G 4R = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Shipping † Device Package MMVL3700T1 SOD−323 3000/Tape & Reel MMVL3700T1G SOD−323 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Publication Order Number: MMVL3700T1/D MMVL3700T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 200 − − Vdc Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) CT − − 1.0 pF Series Resistance (IF = 10 mAdc) RS − 0.7 1.0 W Reverse Leakage Current (VR = 150 Vdc) IR − − 0.1 mAdc Reverse Recovery Time (IF = IR = 10 mAdc) trr − 300 − ns Reverse Breakdown Voltage (IR = 10 mAdc) TYPICAL CHARACTERISTICS 800 2.8 I F , FORWARD CURRENT (mA) RS , SERIES RESISTANCE (OHMS) 3.2 TA = 25°C 2.4 2.0 1.6 1.2 0.8 0 2.0 4.0 6.0 8.0 10 12 14 500 400 TA = 25°C 300 200 0 16 0.7 0.8 0.9 1.0 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 10 8.0 6.0 100 40 I R , REVERSE CURRENT (μ A) C T , DIODE CAPACITANCE (pF) 600 100 0.4 0 700 4.0 TA = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 10 4.0 VR = 15 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.1 0 −10 −20 −30 −40 0.001 −60 −50 VR, REVERSE VOLTAGE (VOLTS) −20 0 +20 +60 +100 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 2 +140 MMVL3700T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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