NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 20 Amps 400 Volts VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • • • • • • • • • Ideal for Coil−on−Plug and Driver−on−Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) C RG G RGE E Applications • Ignition Systems MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 440 V Collector−Gate Voltage VCER 440 V Gate−Emitter Voltage VGE "15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 125 0.83 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range 1 2 DPAK CASE 369C STYLE 7 kV NGD8201N= Device Code Y = Year WW = Work Week ORDERING INFORMATION Device NGD8201NT4 8.0 YWW NGD 8201N 3 Package Shipping † DPAK 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 4 1 Publication Order Number: NGD8201N/D NGD8201N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS Value Unit mJ 250 200 180 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V IC = 10 mA TJ = −40°C to 175°C 390 415 440 VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA mA OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 200 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage Reverse Collector−Emitter Leakage Current Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current BVCES(R) ( ) IC = −75 mA ICES(R) ( ) VCE = −24 V TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 0.05 0.1 0.5 TJ = 175°C 1.0 5.0 10* TJ = −40°C 0.005 0.01 0.1 V mA BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA Gate Resistor (Optional) RG TJ = −40°C to 175°C Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 70 16 25 kW TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* 4.0 4.6 5.2 W ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) ( ) IC = 1 1.0 0 mA mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 mV/°C NGD8201N ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.95 1.15 1.35 V TJ = 175°C 0.7 0.95 1.15 TJ = −40°C 1.0 1.3 1.40 TJ = 25°C 0.95 1.25 1.45 TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.5 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* 1.6 1.9 ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage VCE(on) ( ) IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V Forward Transconductance gfs TJ = 25°C 1.3 IC = 20 A, VGE = 4.5 V TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0* IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 18 25 Mhos 1100 1300 1500 pF 70 80 90 18 20 22 TJ = 25°C 6.0 8.0 10 TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V TJ = 25°C SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) td(off) ( ) tf td(off) ( ) Fall Time (Inductive) tf Turn−On Delay Time td(on) ( ) Rise Time VCC = 300 V, IC = 9.0 A RG = 1.0 1 0 kW kW, RL = 33 W, W VGE = 5.0 V tr VCC = 300 V, IC = 9.0 A RG = 1.0 1 0 kW kW, L = 300 m mH,, VGE = 5.0 V VCC = 14 V, IC = 9.0 A RG = 1 1.0 0 kW kW, RL = 1.5 1 5 W, W VGE = 5.0 V *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec NGD8201N TYPICAL ELECTRICAL CHARACTERISTICS 400 30 TJ = 25°C IA, AVALANCHE CURRENT (A) SCIS ENERGY (mJ) 350 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 0 2 6 4 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 −25 INDUCTOR (mH) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 IC = 25 A IC = 20 A IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 −25 0 25 50 75 100 150 125 50 100 125 150 175 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 175 4.5 V 5V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 50 4.5 V 4V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 75 VGE = 10 V TJ, JUNCTION TEMPERATURE (°C) 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 0 50 Figure 2. Open Secondary Avalanche Current vs. Temperature 2.0 1.5 25 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Self Clamped Inductive Switching 1.75 0 2.5 V 0 1 2 3 4 5 6 7 VGE = 10 V 4V 50 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 0 8 4.5 V 2.5 V 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 8 NGD8201N TYPICAL ELECTRICAL CHARACTERISTICS 10000 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 VCE = 5 V 40 1000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 0 0 0.5 1 1.5 TJ = −40°C 2 2.5 3 3.5 4 10 VCE = 200 V 1.0 0.1 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean 1.75 Mean − 4 s 1.50 Ciss 1000 C, CAPACITANCE (pF) Mean + 4 s 2.00 1.25 1.00 0.75 0.50 Coss 100 Crss 10 1.0 0.25 0 −50 −25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 12 12 10 10 tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (°C) SWITCHING TIME (ms) GATE THRESHOLD VOLTAGE (V) 100 VGE, GATE TO EMITTER VOLTAGE (V) 2.50 SWITCHING TIME (ms) VCE = −24 V 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH 25 tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature http://onsemi.com 5 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) NGD8201N 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) t1 0.1 t2 Single Pulse 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) − TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t ≤ 0.1 s 1 10 100 1000 t,TIME (S) RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 t1 0.02 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 TJ(pk) − TA = P(pk) RqJC(t) 0.0001 0.001 0.01 0.1 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 1 10 NGD8201N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR H D 2 PL G 0.13 (0.005) M T SOLDERING FOOTPRINT 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 http://onsemi.com 7 mm Ǔ ǒinches DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NGD8201N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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