ONSEMI MGB15N40CLT4

MGP15N40CL,
MGB15N40CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N−Channel TO−220 and D2PAK
http://onsemi.com
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
15 AMPERES
410 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
N−Channel
Features
C
• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition
•
•
•
•
•
•
•
•
System Applications
High Pulsed Current Capability up to 50 A
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
Optional Gate Resistor (RG)
Pb−Free Package is Available
RGE
E
1
D2PAK
CASE 418B
STYLE 4
MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
440
VDC
Collector−Gate Voltage
VCER
440
VDC
Gate−Emitter Voltage
VGE
22
VDC
IC
15
50
ADC
AAC
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model) R = 1500 W,
C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
800
V
PD
150
1.0
W
W/°C
TJ, Tstg
−55 to 175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
RG
G
TO−220AB
CASE 221A−09
STYLE 9
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Collector
4
Collector
G1
5N40CL
AYWW
kV
8.0
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1
1
Gate
3
Emit2
Collector ter
G15N40CLG
AYWW
1
Gate
G15N40CL
A
Y
WW
G
3
2
Emitter
Collector
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 8
1
Publication Order Number:
MGP15N40CL/D
MGP15N40CL, MGB15N40CL
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L = 2.0 mH, Starting TJ = 150°C
EAS
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25°C
EAS(R)
Value
Unit
mJ
300
200
mJ
1000
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
TO−220
D2PAK (Note 1)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Value
Unit
RqJC
1.0
°C/W
RqJA
RqJA
62.5
50
TL
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 150°C
380
410
440
VDC
IC = 10 mA
TJ = −40°C to 150°C
390
420
450
TJ = 25°C
−
1.5
20
TJ = 150°C
−
10
40*
TJ = −40°C
−
0.7
1.5
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
ICES
VCE = 350 V,
VGE = 0 V
Reverse Collector−Emitter Leakage
Current
Reverse Collector−Emitter Clamp Voltage
IECS
VCE = −24 V
BVCES(R)
IC = −75 mA
Gate−Emitter Clamp Voltage
TJ = 25°C
−
0.35
1.0
TJ = 150°C
−
8.0
15*
TJ = −40°C
−
0.05
0.5
TJ = 25°C
25
33
50
TJ = 150°C
25
36
50
mADC
mA
VDC
TJ = −40°C
25
30
50
BVGES
IG = 5.0 mA
TJ = −40°C to 150°C
17
20
22
VDC
IGES
VGE = 10 V
TJ = −40°C to 150°C
384
600
1000
mADC
Gate Resistor (Optional)
RG
−
TJ = −40°C to 150°C
−
70
−
W
Gate Emitter Resistor
RGE
−
TJ = −40°C to 150°C
10
16
26
kW
TJ = 25°C
1.4
1.7
2.0
VDC
TJ = 150°C
0.75
1.1
1.4
TJ = −40°C
1.6
1.9
2.1*
Gate−Emitter Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient (Neg)
Collector−to−Emitter On−Voltage
−
−
VCE(on)
IC = 6.0 A,
VGE = 4.0 V
IC = 10 A,
VGE 4.0 V
IC = 15 A,
VGE = 4.0 V
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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2
−
−
4.4
−
mV/°C
TJ = 25°C
1.0
1.3
1.6
VDC
TJ = 150°C
0.9
1.2
1.5
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.3
1.6
1.9
TJ = 150°C
1.2
1.5
1.8
TJ = −40°C
1.3
1.6
1.9*
TJ = 25°C
1.6
1.95
2.25
TJ = 150°C
1.7
2.0
2.3*
TJ = −40°C
1.6
1.9
2.2
MGP15N40CL, MGB15N40CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
1.9
2.2
2.5
VDC
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 20 A,
VGE = 4.0 V
IC = 25 A,
VGE = 4.0 V
Collector−to−Emitter On−Voltage
Forward Transconductance
TJ = 150°C
2.1
2.4
2.7*
TJ = −40°C
1.85
2.15
2.45
TJ = 25°C
2.1
2.5
2.9
TJ = 150°C
2.5
2.9
3.3*
TJ = −40°C
2.0
2.4
2.8
VCE(on)
IC = 10 A, VGE = 4.5 V
TJ = 150°C
−
1.5
1.8
VDC
gfs
VCE = 5.0 V, IC = 6.0 A
TJ = −40°C to 150°C
8.0
15
25
Mhos
−
1000
1300
pF
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to 150°C
−
100
130
−
5.0
8.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS (Note 3)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
td(off)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kW, L = 300 mH
VCC = 300 V, IC = 6.5 A
RG = 1.0 kW, L = 300 mH
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kW, RL = 46 W,
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kW, RL = 46 W,
Turn−On Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kW, RL = 1.5 W
Rise Time
tr
VCC = 10 V, IC = 6.5 A
RG = 1.0 kW, RL = 1.5 W
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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3
TJ = 25°C
−
4.0
10
TJ = 150°C
−
4.5
10
TJ = 25°C
−
7.0
10
TJ = 150°C
−
10
15*
TJ = 25°C
−
4.0
10
TJ = 150°C
−
4.5
10
TJ = 25°C
−
13
20
TJ = 150°C
−
16
20
TJ = 25°C
−
1.0
1.5
TJ = 150°C
−
1.0
1.5
TJ = 25°C
−
4.5
6.0
TJ = 150°C
−
5.0
6.0
mSec
mSec
mSec
MGP15N40CL, MGB15N40CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10.0 V
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
60
VGE = 4.5 V
50
VGE = 5.0 V
40
VGE = 4.0 V
30
TJ = 25°C
VGE = 3.5 V
20
VGE = 3.0 V
10
VGE = 2.5 V
0
1
3
2
5
4
7
6
VGE = 5.0 V
40
VGE = 4.0 V
30
TJ = 150°C
VGE = 3.5 V
20
VGE = 3.0 V
10
8
VGE = 2.5 V
0
3
4
5
6
7
8
Figure 1. Output Characteristics
Figure 2. Output Characteristics
VCE = 10 V
20
15
TJ = 150°C
10
TJ = 25°C
TJ = −40°C
5
0
0
2
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
25
1
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
30
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
4.0
3.5
VGE = 5.0 V
3.0
IC = 25 A
IC = 20 A
2.5
2.0
1.5
1.0
IC = 15 A
0.5
0.0
−50
IC = 5 A
IC = 10 A
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
2.5
THRESHOLD VOLTAGE (VOLTS)
10000
C, CAPACITANCE (pF)
VGE = 4.5 V
50
0
0
IC, COLLECTOR CURRENT (AMPS)
VGE = 10.0 V
Ciss
1000
Coss
100
10
Crss
1
0
20
40
60
80
100 120
Mean + 4 σ
1.5
Mean − 4 σ
1.0
0.5
0.0
−50
140 160 180 200
IC = 1 mA
Mean
2.0
−25
0
25
50
75
100
125
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage vs. Temperature
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4
150
MGP15N40CL, MGB15N40CL
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 W
25
IL, LATCH CURRENT (AMPS)
IL, LATCH CURRENT (AMPS)
30
20
T = 25°C
15
10
T = 150°C
5
0
0
2
4
6
8
15
L = 3.0 mH
10
L = 6.0 mH
5
−25
0
25
50
75
100
125
150
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
175
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 W
T = 25°C
25
IL, LATCH CURRENT (AMPS)
IL, LATCH CURRENT (AMPS)
L = 2.0 mH
20
0
−50
10
30
20
15
T = 150°C
10
5
0
0
2
4
6
8
8
L = 3.0 mH
15
L = 6.0 mH
10
5
−25
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
175
14
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 10 A
L = 300 mH
tf
12
tf
td(off)
6
4
2
0
−50
20
INDUCTOR (mH)
SWITCHING TIME (mS)
10
VCC = 50 V
VGE = 5.0 V
RG = 1000 W
L = 2.0 mH
25
0
−50
10
12
SWITCHING TIME (mS)
VCC = 50 V
VGE = 5.0 V
RG = 1000 W
25
10
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
TJ = 150°C
L = 300 mH
8
6
td(off)
4
2
0
−25
0
25
50
75
100
125
0
150
2
4
6
8
10
12
14
TC, CASE TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Switching Speed vs. Case
Temperature
Figure 12. Switching Speed vs. Collector
Current
http://onsemi.com
5
16
MGP15N40CL, MGB15N40CL
14
14
VCC = 300 V
VGE = 5.0 V
TJ = 25°C
IC = 10 A
L = 300 mH
10
8
12
SWITCHING TIME (mS)
SWITCHING TIME (mS)
12
tf
6
td(off)
4
tf
10
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300 mH
8
6
td(off)
4
2
2
0
250
500
750
0
250
1000
500
750
1000
RG, EXTERNAL GATE RESISTANCE (W)
RG, EXTERNAL GATE RESISTANCE (W)
Figure 13. Switching Speed vs. External Gate
Resistance
Figure 14. Switching Speed vs. External Gate
Resistance
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.02
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
P(pk)
0.01
t1
Single Pulse
t2
DUTY CYCLE, D = t1/t2
0.01
0.00001
0.0001
0.001
0.01
0.1
TJ(pk) − TA = P(pk) RqJA(t)
RqJC ≅ R(t) for t ≤ 0.2 s
1
t,TIME (S)
Figure 15. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 16)
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6
10
100
1000
MGP15N40CL, MGB15N40CL
1.5″
4″
4″
0.125″
4″
Figure 16. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
100
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
100
DC
100 ms
10
1 ms
10 ms
1
100 ms
0.1
0.01
1
10
100
DC
10
100 ms
1
1 ms
10 ms
100 ms
0.1
0.01
1
1000
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 17. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 18. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
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7
MGP15N40CL, MGB15N40CL
100
t1 = 1 ms, D = 0.05
DC
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
0.01
1
10
100
COLLECTOR CURRENT (AMPS)
100
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
0.01
1
1000
t1 = 1 ms, D = 0.05
DC
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 19. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
ORDERING INFORMATION
Device
Package
Shipping †
MGP15N40CL
TO−220AB
MGP15N40CLG
TO−220AB
(Pb−Free)
50 Units / Rail
MGB15N40CLT4
D2PAK
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
MGP15N40CL, MGB15N40CL
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
A
0.340 0.380
8.64
9.65
B
0.380 0.405
9.65 10.29
C
0.160 0.190
4.06
4.83
D
0.020 0.035
0.51
0.89
E
0.045 0.055
1.14
1.40
F
0.310 0.350
7.87
8.89
G
0.100 BSC
2.54 BSC
H
0.080 0.110
2.03
2.79
J
0.018 0.025
0.46
0.64
K
0.090 0.110
2.29
2.79
L
0.052 0.072
1.32
1.83
M 0.280 0.320
7.11
8.13
N
0.197 REF
5.00 REF
P
0.079 REF
2.00 REF
R
0.039 REF
0.99 REF
S
0.575 0.625 14.60 15.88
V
0.045 0.055
1.14
1.40
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
P
U
L
L
M
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MGP15N40CL, MGB15N40CL
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 9:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
GATE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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