NL27WZ06 Dual Inverter with Open Drain Outputs The NL27WZ06 is a high performance dual inverter with open drain outputs operating from a 1.65 V to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level. This allows the NL27WZ06 to be used to interface 5 V circuits to circuits of any voltage between VCC and 7 V using an external resistor and power supply. http://onsemi.com MARKING DIAGRAMS Features • • • • • Extremely High Speed: tPD 2.4 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability With 5 V TTL Logic with VCC = 3 V LVCMOS Compatible 24 mA Output Sink Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available IN A1 GND IN A2 1 6 2 5 3 4 1 MF M G G 1 6 TSOP−6 DT SUFFIX CASE 318G 1 MF M G G 1 MF = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. OUT Y1 VCC M • • • • 6 SC−88 DF SUFFIX CASE 419B PIN ASSIGNMENT 1 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 OUT Y2 FUNCTION TABLE A Input Figure 1. Pinout (Top View) L H IN A1 1 OUT Y1 IN A2 1 OUT Y2 February, 2007 − Rev. 6 Z L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2007 Y Output 1 Publication Order Number: NL27WZ06/D NL27WZ06 MAXIMUM RATINGS Symbol VCC Characteristics Value Unit −0.5 to +7.0 V −0.5 ≤ VI ≤ +7.0 V −0.5 ≤ VO ≤ 7.0 V VI < GND −50 mA VO < GND −50 mA DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current Output in Z or LOW State (Note 1) IO DC Output Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C PD Power Dissipation in Still Air SC−88, TSOP−6 200 mW qJA Thermal Resistance SC−88, TSOP−6 333 °C/W TL Lead temperature, 1 mm from case for 10 s 260 °C TJ Junction temperature under bias +150 °C > 2000 > 200 N/A V ±500 mA VESD ILatchup ESD Withstand Voltage Latchup Performance Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Above VCC and Below GND at 85°C (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Tested to EIA/JESD22−A114−A 3. Tested to EIA/JESD22−A115−A 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate Operating Data Retention Only (Z or LOW State) VCC = 2.5 V ±0.2 V VCC =3.0 V ±0.3 V VCC =5.0 V ±0.5 V http://onsemi.com 2 Min Max Unit 1.65 1.5 5.5 5.5 V 0 5.5 V 0 5.5 V −55 +125 °C 0 0 0 20 10 5 ns/V NL27WZ06 DC ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C TA = 25°C VCC (V) Min High−Level Input Voltage 1.65 2.3 to 5.5 0.75 VCC 0.70 VCC VIL Low−Level Input Voltage 1.65 2.3 to 5.5 0.25 VCC 0.30 VCC 0.25 VCC 0.30 VCC V ILKG Z−State Output Leakage Current VIN = VIL VOUT = VCC or GND 1.65 to 5.5 ±5.0 ±10.0 mA VOL Low−Level Output Voltage VIN = VIH IOL = 100 mA 1.65 to 5.5 0.0 0.1 0.1 V IOL = 3 mA 1.65 0.08 0.24 Symbol Parameter VIH IIN Input Leakage Current IOFF Power Off−Output Leakage Current ICC Quiescent Supply Current Condition Typ Max Min Max 0.75 VCC 0.70 VCC Unit V IOL = 8 mA 2.3 0.22 0.3 0.3 IOL = 12 mA 2.7 0.22 0.4 0.4 IOL = 16 mA 3.0 0.28 0.4 0.4 IOL = 24 mA 3.0 0.38 0.55 0.55 IOL = 32 mA 4.5 0.42 0.55 0.55 VIN or VOUT = VCC or GND 0 to 5.5 ±0.1 ±1.0 mA VOUT = 5.5 V 0 1 10 mA VIN = VCC or GND 5.5 1 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W −40°C ≤ TA ≤ 85°C TA = 25°C Symbol tPZL tPLZ Condition VCC (V) Min Typ Max Min Max Unit RL = R1= 5000 W, CL = 15 pF 1.8 ± 0.15 2.0 5.7 10.5 2.0 11.0 ns RL = R1= 500 W, CL = 50 pF 2.5 ± 0.20 0.8 3.0 3.6 0.8 4.1 RL = R1= 500 W, CL = 50 pF 3.3 ± 0.30 0.8 2.4 3.2 0.8 3.7 RL = R1= 500 W, CL = 50 pF 5.0 ± 0.50 0.5 2.4 3.0 0.5 3.5 RL = R1= 5000 W, CL = 15 pF 1.8 ± 0.15 2.0 5.7 10.5 2.0 11.0 RL = R1= 500 W, CL = 50 pF 2.5 ± 0.20 0.8 3.0 3.6 0.8 4.1 RL = R1= 500 W, CL = 50 pF 3.3 ± 0.30 0.8 2.1 3.2 0.8 3.7 RL = R1= 500 W, CL = 50 pF 5.0 ± 0.50 0.5 1.2 3.0 0.5 3.5 Parameter Propagation Delay (Figure 3 and 4) Propagation Delay (Figure 3 and 4) ns CAPACITIVE CHARACTERISTICS Symbol CIN Parameter Input Capacitance COUT Output Capacitance CPD Power Dissipation Capacitance (Note 6) Condition Typical Unit VCC = 5.5 V, VI = 0 V or VCC 2.5 pF VCC = 5.5 V, VI = 0 V or VCC 4 pF 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 4 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 NL27WZ06 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Condition −55°C ≤ TA ≤ 125°C TA = 25°C VCC (V) Min Typ 0.75 VCC 0.70 VCC Max Min Max High−Level Input Voltage 1.65 2.3 to 5.5 VIL Low−Level Input Voltage 1.65 2.3 to 5.5 0.25 VCC 0.30 VCC 0.25 VCC 0.30 VCC V ILKG Z−State Output Leakage Current VIN = VIL VOUT = VCC or GND 1.65 to 5.5 ±5.0 ±10.0 mA VOL Low−Level Output Voltage VIN = VIH IOL = 100 mA 1.65 to 5.5 0.0 0.1 0.1 V IOL = 3 mA 1.65 0.08 0.24 IIN Input Leakage Current IOFF Power Off−Output Leakage Current ICC Quiescent Supply Current 0.75 VCC 0.70 VCC Unit VIH V IOL = 8 mA 2.3 0.22 0.3 0.35 IOL = 12 mA 2.7 0.22 0.4 0.45 IOL = 16 mA 3.0 0.28 0.4 0.5 IOL = 24 mA 3.0 0.38 0.55 0.65 IOL = 32 mA 4.5 0.42 0.55 0.65 VIN or VOUT = VCC or GND 0 to 5.5 ±0.1 ±1.0 mA VOUT = 5.5 V 0 1 10 mA VIN = VCC or GND 5.5 1 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W −55°C ≤ TA ≤ 125°C TA = 25°C Symbol tPZL tPLZ Condition VCC (V) Min Typ Max Min Max Unit RL = R1= 5000 W, CL = 15 pF 1.8 ± 0.15 2.0 5.7 10.5 2.0 11.0 ns RL = R1= 500 W, CL = 50 pF 2.5 ± 0.20 0.8 3.0 3.6 0.8 4.1 RL = R1= 500 W, CL = 50 pF 3.3 ± 0.30 0.8 2.4 3.2 0.8 3.7 RL = R1= 500 W, CL = 50 pF 5.0 ± 0.50 0.5 2.4 3.0 0.5 3.5 RL = R1= 5000 W, CL = 15 pF 1.8 ± 0.15 2.0 5.7 10.5 2.0 11.0 RL = R1= 500 W, CL = 50 pF 2.5 ± 0.20 0.8 3.8 4.5 0.8 5.0 RL = R1= 500 W, CL = 50 pF 3.3 ± 0.30 0.8 2.9 3.2 0.8 3.7 RL = R1= 500 W, CL = 50 pF 5.0 ± 0.50 0.5 1.2 3.0 0.5 3.5 Parameter Propagation Delay (Figure 3 and 4) Propagation Delay (Figure 3 and 4) ns CAPACITIVE CHARACTERISTICS Symbol CIN Parameter Input Capacitance COUT Output Capacitance CPD Power Dissipation Capacitance (Note 6) Condition Typical Unit VCC = 5.5 V, VI = 0 V or VCC 2.5 pF VCC = 5.5 V, VI = 0 V or VCC 4 pF 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 4 pF 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 4 NL27WZ06 VCC A 50% GND tPZL tPLZ HIGH IMPEDANCE 50% VCC Y VOL +0.3 V Figure 3. Switching Waveforms VCC R1 PULSE GENERATOR VCC x 2 DUT RT CL RL RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Device Package NL27WZ06DFT2 NL27WZ06DFT2G Shipping† SC−88 SC−88 (Pb−Free) 3000 / Tape & Reel NL27WZ06DTT1 NL27WZ06DTT1G TSOP−6 TSOP−6 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NL27WZ06 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NL27WZ06 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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