ONSEMI MMUN2111LT1G

MMUN2111LT1G Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
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PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel.
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
3
MARKING
DIAGRAM
1
2
A6x M G
G
SOT−23
CASE 318
STYLE 6
1
A6x
= Device Code
x
= A − L (Refer to page 2)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
Device
Package
Shipping†
PD
246 (Note 1)
400 (Note 2)
2.0 (Note 1)
3.2 (Note 2)
mW
MMUN21xxLT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
MMUN21xxLT3G
SOT−23 10000/Tape & Reel
(Pb−Free)
Collector Current
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
174 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage,
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 10
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1G Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping
MMUN2111LT1G
MMUN2111LT3G
Device*
SOT−23
A6A
10
10
3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1G
SOT−23
A6B
22
22
3000/Tape & Reel
MMUN2113LT1G
MMUN2113LT3G
SOT−23
A6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1G
MMUN2114LT3G
SOT−23
A6D
10
47
3000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1G
SOT−23
A6E
10
∞
3000/Tape & Reel
MMUN2116LT1G
SOT−23
A6F
4.7
∞
3000/Tape & Reel
MMUN2130LT1G (Note 3)
SOT−23
A6G
1.0
1.0
3000/Tape & Reel
MMUN2131LT1G (Note 3)
SOT−23
A6H
2.2
2.2
3000/Tape & Reel
MMUN2132LT1G
SOT−23
A6J
4.7
4.7
3000/Tape & Reel
MMUN2133LT1G
SOT−23
A6K
4.7
47
3000/Tape & Reel
MMUN2134LT1G (Note 3)
SOT−23
A6L
22
47
3000/Tape & Reel
*The “G’’ suffix indicates Pb−Free package available.
3. New devices. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
MMUN2111LT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
ON CHARACTERISTICS (Note 5)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2133LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2132LT1G
MMUN2134LT1G
MMUN2111LT1G
MMUN2112LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2113LT1G
MMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2130LT1G
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3
VCE(sat)
VOL
VOH
Vdc
Vdc
Vdc
MMUN2111LT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
kW
ON CHARACTERISTICS (Note 5)
Input Resistor
MMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
Resistor Ratio
MMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
R1/R2
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
MMUN2111LT1G Series
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RqJA = 625°C/W
50
0
-50
0
50
100
150
1
IC/IB=10
TA=-25°C
75°C
0.1
0.01
60
Figure 2. VCE(sat) versus IC
4
VCE = 10 V
TA=75°C
25°C
-25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
100
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
3
2
1
0
100
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
25°C
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
1
0.1
0.01
50
Figure 4. Output Capacitance
TA=-25°C
10
0.001
80
Figure 1. Derating Curve
Figure 3. DC Current Gain
IC , COLLECTOR CURRENT (mA)
40
IC, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
h FE, DC CURRENT GAIN (NORMALIZED)
20
0
TA, AMBIENT TEMPERATURE (°C)
1000
10
25°C
TA=-25°C
10
25°C
75°C
1
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
0.1
10
0
Figure 5. Output Current versus Input Voltage
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
MMUN2111LT1G Series
1000
10
h FE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
IC/IB=10
TA=-25°C
25°C
1
75°C
0.1
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0
20
40
60
IC, COLLECTOR CURRENT (mA)
1
80
10
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
IC , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
0
75°C
25°C
TA=-25°C
10
1
0.1
VO = 5 V
0.01
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
1
2
3
4
VO = 0.2 V
TA=-25°C
25°C
10
75°C
1
0
10
6
7
8
9
10
Figure 10. Output Current versus Input Voltage
100
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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6
MMUN2111LT1G Series
1
1000
IC/IB=10
TA=-25°C
h FE , CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
0.6
0.4
0.2
TA=75°C
25°C
-25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
1
2
3
4
VO = 2 V
TA=-25°C
25°C
75°C
10
1
0
10
6
7
8
9
10
Figure 15. Output Current versus Input Voltage
100
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Vin , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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7
MMUN2111LT1G Series
1
180
IC/IB=10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
-25°C
120
100
80
60
40
20
0
80
1
2
4
6
Figure 17. VCE(sat) versus IC
90 100
100
4
TA=75°C
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
75°C
1
0.1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V
25°C
-25°C
1
50
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
80
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 21. Input Voltage versus Output Current
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8
50
MMUN2111LT1G Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 24. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
1
75°C
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 23. DC Current Gain
12
0
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2115LT1
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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9
50
MMUN2111LT1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 29. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 28. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2116LT1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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10
50
MMUN2111LT1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2132LT1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
TA = −25°C
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 34. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
12
10
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
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11
50
MMUN2111LT1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2133LT1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
7
Cob, CAPACITANCE (pF)
100
Figure 38. DC Current Gain
8
6
5
4
3
2
1
0
25°C
10
1
50
TA = −25°C
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
0.1
VO = 5 V
0.001
50
Figure 39. Output Capacitance
TA = −25°C
0.01
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 40. Output Current versus Input Voltage
+12 V
Vin, INPUT VOLTAGE (VOLTS)
10
Typical Application
for PNP BRTs
TA = −25°C
1
75°C
25°C
LOAD
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 41. Input Voltage versus Output Current
Figure 42. Inexpensive, Unregulated Current Source
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12
MMUN2111LT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMUN2111LT1/D