MMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. http://onsemi.com PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) Features • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 3 MARKING DIAGRAM 1 2 A6x M G G SOT−23 CASE 318 STYLE 6 1 A6x = Device Code x = A − L (Refer to page 2) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit Device Package Shipping† PD 246 (Note 1) 400 (Note 2) 2.0 (Note 1) 3.2 (Note 2) mW MMUN21xxLT1G SOT−23 (Pb−Free) 3000/Tape & Reel MMUN21xxLT3G SOT−23 10000/Tape & Reel (Pb−Free) Collector Current ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C mW/°C Thermal Resistance, Junction-to-Ambient RqJA 508 (Note 1) 311 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 174 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage, Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 10 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Publication Order Number: MMUN2111LT1/D MMUN2111LT1G Series DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping MMUN2111LT1G MMUN2111LT3G Device* SOT−23 A6A 10 10 3000/Tape & Reel 10,000/Tape & Reel MMUN2112LT1G SOT−23 A6B 22 22 3000/Tape & Reel MMUN2113LT1G MMUN2113LT3G SOT−23 A6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2114LT1G MMUN2114LT3G SOT−23 A6D 10 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2115LT1G SOT−23 A6E 10 ∞ 3000/Tape & Reel MMUN2116LT1G SOT−23 A6F 4.7 ∞ 3000/Tape & Reel MMUN2130LT1G (Note 3) SOT−23 A6G 1.0 1.0 3000/Tape & Reel MMUN2131LT1G (Note 3) SOT−23 A6H 2.2 2.2 3000/Tape & Reel MMUN2132LT1G SOT−23 A6J 4.7 4.7 3000/Tape & Reel MMUN2133LT1G SOT−23 A6K 4.7 47 3000/Tape & Reel MMUN2134LT1G (Note 3) SOT−23 A6L 22 47 3000/Tape & Reel *The “G’’ suffix indicates Pb−Free package available. 3. New devices. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 MMUN2111LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 − − − − − − − − − − − − − − − − − − − − − − Unit ON CHARACTERISTICS (Note 5) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2130LT1G MMUN2131LT1G MMUN2115LT1G MMUN2116LT1G MMUN2132LT1G MMUN2134LT1G MMUN2111LT1G MMUN2112LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2113LT1G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2134LT1G MMUN2115LT1G MMUN2116LT1G MMUN2131LT1G MMUN2132LT1G MMUN2130LT1G http://onsemi.com 3 VCE(sat) VOL VOH Vdc Vdc Vdc MMUN2111LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit kW ON CHARACTERISTICS (Note 5) Input Resistor MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 Resistor Ratio MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G R1/R2 0.8 0.8 0.8 0.17 − − 0.8 0.8 0.8 0.055 0.38 1.0 1.0 1.0 0.21 − − 1.0 1.0 1.0 0.1 0.47 1.2 1.2 1.2 0.25 − − 1.2 1.2 1.2 0.185 0.56 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 MMUN2111LT1G Series VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RqJA = 625°C/W 50 0 -50 0 50 100 150 1 IC/IB=10 TA=-25°C 75°C 0.1 0.01 60 Figure 2. VCE(sat) versus IC 4 VCE = 10 V TA=75°C 25°C -25°C 100 1 10 IC, COLLECTOR CURRENT (mA) 100 75°C f = 1 MHz lE = 0 V TA = 25°C 3 2 1 0 100 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 100 25°C VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) 1 0.1 0.01 50 Figure 4. Output Capacitance TA=-25°C 10 0.001 80 Figure 1. Derating Curve Figure 3. DC Current Gain IC , COLLECTOR CURRENT (mA) 40 IC, COLLECTOR CURRENT (mA) C ob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) 20 0 TA, AMBIENT TEMPERATURE (°C) 1000 10 25°C TA=-25°C 10 25°C 75°C 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 0.1 10 0 Figure 5. Output Current versus Input Voltage 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 MMUN2111LT1G Series 1000 10 h FE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 IC/IB=10 TA=-25°C 25°C 1 75°C 0.1 0.01 VCE = 10 V TA=75°C 25°C -25°C 100 10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 1 80 10 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 0 75°C 25°C TA=-25°C 10 1 0.1 VO = 5 V 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 0.2 V TA=-25°C 25°C 10 75°C 1 0 10 6 7 8 9 10 Figure 10. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MMUN2111LT1G Series 1 1000 IC/IB=10 TA=-25°C h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 TA=75°C 25°C -25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 2 V TA=-25°C 25°C 75°C 10 1 0 10 6 7 8 9 10 Figure 15. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Vin , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MMUN2111LT1G Series 1 180 IC/IB=10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 -25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC 90 100 100 4 TA=75°C IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25°C 25°C 75°C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V 25°C -25°C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 50 MMUN2111LT1G Series 1 1000 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 TA = −25°C 100 10 1 50 25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 24. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 1 75°C 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 12 0 VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2115LT1 25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 9 50 MMUN2111LT1G Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 29. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 28. DC Current Gain 12 0 VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2116LT1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 10 50 MMUN2111LT1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2132LT1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 25°C 10 TA = −25°C 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 34. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 10 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 11 50 MMUN2111LT1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2133LT1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25°C 7 Cob, CAPACITANCE (pF) 100 Figure 38. DC Current Gain 8 6 5 4 3 2 1 0 25°C 10 1 50 TA = −25°C 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 0.1 VO = 5 V 0.001 50 Figure 39. Output Capacitance TA = −25°C 0.01 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 40. Output Current versus Input Voltage +12 V Vin, INPUT VOLTAGE (VOLTS) 10 Typical Application for PNP BRTs TA = −25°C 1 75°C 25°C LOAD VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current Figure 42. Inexpensive, Unregulated Current Source http://onsemi.com 12 MMUN2111LT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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