NJL4281D (NPN) NJL4302D (PNP) Complementary ThermalTrakt Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices. Features • • • • • Thermally Matched Bias Diode Instant Thermal Bias Tracking Absolute Thermal Integrity High Safe Operating Area Pb−Free Packages are Available* http://onsemi.com BIPOLAR POWER TRANSISTORS 15 AMP, 350 VOLT, 230 WATT TO−264, 5 LEAD CASE 340AA STYLE 1 Benefits • Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature • • • Response Significantly Improved Bias Stability Simplified Assembly ♦ Reduced Labor Costs ♦ Reduced Component Count High Reliability MARKING DIAGRAM SCHEMATIC NJLxxxxDG AYYWW Thermal Trak Applications • High−End Consumer Audio Products ♦ • Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) ♦ NJLxxxxD = Device Code xxxx = 4281 or 4302 G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week ORDERING INFORMATION Device NJL4281D NJL4281DG NJL4302D NJL4302DG Package Shipping TO−264 25 Units / Rail TO−264 (Pb−Free) 25 Units / Rail TO−264 25 Units / Rail TO−264 (Pb−Free) 25 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 2 1 Publication Order Number: NJL4281D/D NJL4281D (NPN) NJL4302D (PNP) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage Rating VCEO 350 Vdc Collector−Base Voltage VCBO 350 Vdc Emitter−Base Voltage VEBO 5 Vdc VCEX 350 Vdc IC 15 30 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 230 1.84 W W/°C TJ, Tstg − 65 to +150 °C VR 200 V IF(AV) 1.0 A Symbol Max Unit RqJC 0.54 °C/W Collector−Emitter Voltage − 1.5 V Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ATTRIBUTES Characteristic ESD Protection Value Human Body Model Machine Model >8000 V > 400 V Flammability Rating UL 94 V−0 @ 0.125 in http://onsemi.com 2 NJL4281D (NPN) NJL4302D (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCE(sus) 350 − Vdc Collector Cut−off Current (VCE = 200 V, IB = 0) ICEO − 100 mAdc Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO − 50 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 5.0 4.5 1.0 − − 80 80 80 80 40 10 250 250 250 250 − − − 1.0 − 1.4 − 1.5 35 − − 600 OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = 50 mA, IB = 0) mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1.0 s (non−repetitive) (VCE = 100 Vdc, t = 1.0 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 3.0 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 8.0 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VCE(sat) Emitter−Base Saturation Voltage (IC = 8.0 Adc, IB = 0.8 A) VBE(sat) Base−Emitter ON Voltage (IC = 8.0 Adc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) MHz Cob Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) trr pF V 1.1 0.93 mA 10 100 2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 100 ns NJL4281D (NPN) NJL4302D (PNP) TYPICAL CHARACTERISTICS 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 TJ = 100°C 100 TJ = 25°C 0.1 1 10 100 0.01 10 100 Figure 2. DC Current Gain, VCE = 5 V, PNP NJL4302D 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 25°C 0.1 1 10 TJ = 100°C 100 10 0.01 100 TJ = 25°C 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain, VCE = 20 V, NPN NJL4281D Figure 4. DC Current Gain, VCE = 20 V, PNP NJL4302D 2.0 1.8 1.2 SATURATION VOLTAGE (V) SATURATION VOLTAGE (V) 1 Figure 1. DC Current Gain, VCE = 5 V, NPN NJL4281D 1.4 1 0.8 Vbe(sat) 0.6 0.4 Vce(sat) 0.2 0 0.01 0.1 IC, COLLECTOR CURRENT (A) TJ = 100°C 10 0.01 TJ = 25°C IC, COLLECTOR CURRENT (A) 1000 100 100 10 10 0.01 TJ = 100°C 0.1 1 TJ = 25°C Ic/Ib = 10 10 1.6 1.4 1.2 1.0 Vbe(sat) 0.8 0.6 0.4 Vce(sat) 0.2 100 0.0 0.01 0.1 1 TJ = 25°C Ic/Ib = 10 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Typical Saturation Voltage, NPN NJL4281D Figure 6. Typical Saturation Voltage, PNP NJL4302D http://onsemi.com 4 100 NJL4281D (NPN) NJL4302D (PNP) TYPICAL CHARACTERISTICS 2.5 1.0 0.8 0.6 0.4 0.2 0.0 0.01 fT, CURRENT BANDWIDTH PRODUCT (MHz) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 0.1 1 10 100 0.5 0.0 0.01 0.1 1 10 Figure 8. Typical Base−Emitter Voltages, PNP NJL4302D VCE = 5 V 50 40 VCE = 10 V 30 20 TJ = 25°C ftest = 1 MHz 0.1 1.0 Figure 7. Typical Base−Emitter Voltages, NPN NJL4281D 60 0 1.5 IC, COLLECTOR CURRENT (A) 70 10 2.0 IC, COLLECTOR CURRENT (A) 1 10 fT, CURRENT BANDWIDTH PRODUCT (MHz) VBE(on), BASE−EMITTER VOLTAGE (V) 1.4 100 70 60 VCE = 5 V 50 VCE = 10 V 40 30 20 10 0 0.1 TJ = 25°C ftest = 1 MHz 1 10 IC, COLLECTOR CURRENT (A) Figure 9. Typical Current Gain Bandwidth Product, NPN NJL4281D Figure 10. Typical Current Gain Bandwidth Product, PNP NJL4302D http://onsemi.com 5 NJL4281D (NPN) NJL4302D (PNP) 1E−05 IR, REVERSE CURRENT (mA) 10 IF, FORWARD CURRENT (A) 1E−06 TJ = 100°C 1E−07 1E−08 TJ = 25°C 1E−09 1E−10 TJ = −25°C 1E−11 0 50 100 150 200 250 300 350 1 0.1 100°C 0.001 0.1 400 0.3 VR, REVERSE VOLTAGE (VOLTS) −25°C 0.5 0.7 0.9 1.1 1.3 1.5 VF, VOLTAGE (VOLTS) Figure 11. Typical Diode Reverse Current Figure 12. Typical Diode Forward Voltage 100 100 10 mS IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 25°C 0.01 10 1 Sec 1 100 mS 0.1 TJ = 25°C 0.01 1 10 mS 10 1 Sec 1 100 mS 0.1 TJ = 25°C 0.01 10 100 1000 1 Vce, COLLECTOR−EMITTER VOLTAGE (V) 10 100 1000 Vce, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Active Region Safe Operating Area, NPN NJL4281D Figure 14. Active Region Safe Operating Area, PNP NJL4302D http://onsemi.com 6 NJL4281D (NPN) NJL4302D (PNP) PACKAGE DIMENSIONS TO−264, 5 LEAD CASE 340AA−01 ISSUE O −T− Q −B− Y 0.25 (0.010) M T B C M E U N A R W L 1 2 3 4 5 P K M G D 5 PL 0.25 (0.010) F 5 PL J H M T B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 25.857 25.984 26.111 1.018 1.023 1.028 B 19.761 19.888 20.015 0.778 0.783 0.788 C 4.928 5.055 5.182 0.194 0.199 0.204 0.0480 BSC D 1.219 BSC E 2.032 2.108 2.184 0.0800 0.0830 0.0860 1.981 BSC 0.0780 BSC F 0.150 BSC G 3.81 BSC H 2.667 2.718 2.769 0.1050 0.1070 0.1090 0.0230 BSC J 0.584 BSC K 20.422 20.549 20.676 0.804 0.809 0.814 0.444 REF L 11.28 REF −−− 7_ 0_ 7_ 0 _ −−− M 0.180 REF N 4.57 REF P 2.259 2.386 2.513 0.0889 0.0939 0.0989 0.1370 BSC Q 3.480 BSC 0.100 REF R 2.54 REF −−− S 0 _ −−− 8_ 0_ 8_ 0.243 REF U 6.17 REF −−− W 0 _ −−− 6_ 0_ 6_ 0.0940 BSC Y 2.388 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. ANODE 5. CATHODE S W S ThermalTrak is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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