Order this document by MJE16002/D SEMICONDUCTOR TECHNICAL DATA " ! *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for line–operated switchmode applications. The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for applications where drive current is limited. Typical Applications: 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS • • • • • Switching Regulators High Resolution Deflection Circuits Inverters Motor Drives Fast Switching Speeds 50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ) • 100_C Performance Specified for: Reverse–Biased SOA Inductive Switching Times Saturation Voltages Leakage Currents ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 221A–06 TO–220AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO(sus) 450 Vdc Collector–Emitter Voltage VCEV 850 Vdc Emitter–Base Voltage VEB 6.0 Vdc Collector Current — Continuous — Peak (1) IC ICM 5.0 10 Adc Base Current — Continuous — Peak (1) IB IBM 4.0 8.0 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C PD 80 32 0.64 Watts TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC 1.56 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 — — Vdc — — — — 0.25 1.5 OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C) ICER — — 2.5 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — — 1.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 17 or 18 RBSOA See Figure 19 ON CHARACTERISTICS (1) Collector–Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.2 Adc) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 3.0 Adc, IB = 0.4 Adc) (IC = 3.0 Adc, IB = 0.3 Adc) (IC = 3.0 Adc, IB = 0.4 Adc, TC = 100_C) (IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C) MJE16002 MJE16004 MJE16002 MJE16004 MJE16002 MJE16004 VCE(sat) Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.4 Adc) (IC = 3.0 Adc, IB = 0.3 Adc) (IC = 3.0 Adc, IS = 0.4 Adc, TC = 100_C) (IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C) MJE16002 MJE16004 MJE16002 MJE16004 Vdc — — — — — — — — — — — — 1.0 1.0 2.5 2.5 2.5 2.5 — — — — — — — — 1.5 1.5 1.5 1.5 5.0 7.0 — — — — Cob — — 200 pF td — 30 100 ns VBE(sat) DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) Vdc hFE MJE16002 MJE16004 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) MJE16002/MJH10002 Delay Time Rise Time Storage Time Fall Time Storage Time (IC = 3.0 Adc, VCC = 250 Vdc, IB1 = 0.4 Adc, PW = 30 µs, Duty Cycle 2.0%) (IB2 = 0.8 Adc, RB2 = 8.0 Ω) (VBE(off) = 5.0 Vdc) Fall Time Resistive Load (Table 1) Storage Time Fall Time Storage Time — 100 300 — 1000 3000 tf — 60 300 ts — 400 — tf — 130 — td — 30 100 MJE16004/MJH16004 Delay Time Rise Time tr ts (IC = 3.0 Adc, VCC = 250 Vdc, IB1 = 0.3 Adc, PW = 30 µs, Duty Cycle 2.0%) (IB2 = 0.6 Adc, RB2 = 8.0 Ω) (VBE(off) = 5.0 Vdc) Fall Time (1) Pulse Test: PW = 300 µs, Duty Cycle tr — 130 300 ts — 800 2700 tf — 80 350 ts — 250 — tf — 60 — ns 2%. I *βf = C IB1 2 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v SWITCHING CHARACTERISTICS (continued) Characteristics Inductive Load (Table 2) (TJ = 100_C) Fall Time (IC = 3.0 Adc, IB1 = 0.4 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) Storage Time Fall Time (TJ = 150_C) Crossover Time Inductive Load (Table 2) (TJ = 100_C) Fall Time (IC = 3.0 Adc, IB1 = 0.3 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) Storage Time Fall Time Typ Max Unit tsv — 500 1600 ns tfi — 100 200 tc — 120 250 tsv — 600 — tfi — 120 — tc — 160 — tsv — 400 1300 tfi — 80 150 tc — 90 200 tsv — 450 — tfi — 100 — tc — 110 — MJE16004 Storage Time Crossover Time Min MJE16002 Storage Time Crossover Time Symbol (TJ = 150_C) Crossover Time (1) Pulse Test: PW = 300 µs, Duty Cycle ns 2%. I *βf = C IB1 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 60 50 TJ = 100°C 30 20 25°C 10 – 55°C 7.0 5.0 VCE = 5.0 V 3.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 5.0 7.0 10 2.0 IC = 1 A 4A 5A 0.7 0.5 0.3 0.2 TJ = 25°C 0.1 0.03 0.05 0.07 0.1 Figure 1. DC Current Gain 0.5 0.7 1.0 0.2 0.3 IB, BASE CURRENT (AMPS) 3.0 2.0 Figure 2. Collector Saturation Region 3.0 5.0 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 3A 2A 1.0 3.0 2.0 1.0 βf = 10 TJ = 25°C 0.5 βf = 10 TJ = 100°C βf = 5 TJ = 25°C 0.2 0.1 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 2.0 1.5 1.0 βf = 5 TJ = 25°C βf = 10 TJ = 100°C 0.7 0.5 0.3 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. Base–Emitter Voltage Motorola Bipolar Power Transistor Device Data 5.0 10 3 TYPICAL STATIC CHARACTERISTICS (continued) 10000 TJ = 25°C 103 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µ A) 104 TJ = 150°C 102 125°C 100°C 101 100 10–1 – 0.4 75°C REVERSE Cib 1000 Cob 100 FORWARD VCE = 250 Vdc 25°C 0 – 0.2 + 0.2 + 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) 10 0.1 + 0.6 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region 850 Figure 6. Capacitance TYPICAL DYNAMIC CHARACTERISTICS 10000 10000 5000 t sv, STORAGE TIME (ns) t sv, STORAGE TIME (ns) 5000 VBE(off) = 0 V 2000 VBE(off) = 2.0 V 1000 VBE(off) = 5.0 V 500 200 100 0.5 βf = 5 TJ = 75°C VCC = 20 V 0.7 2000 VBE(off) = 0 V 1000 VBE(off) = 2.0 V 500 200 1.0 3.0 2.0 IC, COLLECTOR CURRENT (AMPS) 100 0.5 5.0 0.7 3.0 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 7. Storage Time tfi, COLLECTOR CURRENT FALL TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns) 500 0V – 5.0 V 200 VBE(off) = 0 V 100 10 0.5 4 1000 – 2.0 V 20 5.0 Figure 8. Storage Time 1000 50 VBE(off) = 5.0 V βf = 10 TJ = 75°C VCC = 20 V βf = 5 TJ = 75°C VCC = 20 V 0.7 1.0 VBE(off) = 2.0 V VBE(off) = – 5.0 V 2.0 3.0 5.0 – 2.0 V 500 200 VBE(off) = 0 V – 5.0 V 0V 100 50 20 10 0.5 βf = 10 TJ = 75°C VCC = 20 V 0.7 1.0 VBE(off) = 2.0 V VBE(off) = 5.0 V 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Collector Current Fall Time Figure 10. Collector Current Fall Time Motorola Bipolar Power Transistor Device Data 5.0 TYPICAL DYNAMIC CHARACTERISTICS (continued) 1000 1000 – 2.0 V – 2.0 V 500 tc, CROSSOVER TIME (ns) tc, CROSSOVER TIME (ns) 500 VBE(off) = 0 V 200 0V – 5.0 V 100 50 VBE(off) = 2.0 V VBE(off) = 5.0 V βf = 5 TJ = 75°C VCC = 20 V 20 10 0.5 0.7 VBE(off) = 0 V 200 0V 100 – 5.0 V 50 βf = 10 TJ = 75°C VCC = 20 V 20 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 10 0.5 5.0 0.7 VBE(off) = 2.0 V VBE(off) = 5.0 V 2.0 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Time Figure 12. Crossover Time TYPICAL ELECTRICAL CHARACTERISTICS VCE(pk) 90% VCE(pk) IC tsv 90% IC(pk) trv tfi tti tc VCE 10% VCE(pk) IB 10% IC pk 90% IB1 2% IC IB2, REVERSE BASE CURRENT (AMPS) 5.0 IC pk 4.0 2.0 IC = 3.0 A TJ = 25°C 1.0 0 TIME r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 13. Inductive Switching Measurements 1 0.7 0.5 0.3 2.0 4.0 5.0 7.0 3.0 6.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 8.0 Figure 14. Peak Reverse Base Current 0.1 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 P(pk) RθJC(t) = r(t) RθJC RθJC = 156°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.07 0.05 0.01 0.01 1.0 0.2 0.1 0.02 0 D = 0.5 0.2 0.03 IB1 = 0.3 A IB1 = 0.6 A 3.0 0.2 0.5 1 2 5 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1k Figure 15. Thermal Response (MJE16002 and MJE16004) Motorola Bipolar Power Transistor Device Data 5 SAFE OPERATING AREA INFORMATION 2.0 1.0 0.5 10 10 µs IC(pk), COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 5.0 1.0 ms TC = 25°C dc 0.2 0.1 0.05 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.02 0.01 5.0 7.0 9.0 βf ≥ 4 TJ ≤ 100°C 8.0 7.0 6.0 5.0 4.0 3.0 2.0 VBE(off) = 0 V VBE(off) = 1.0 to 5.0 V 1.0 0 0 10 20 30 50 70 100 200 300 450 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 200 500 700 850 VCE(pk), PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 17. Maximum Rated Reverse Bias Safe Operating Area Figure 16. Maximum Rated Forward Bias Safe Operating Area (MJE16002 and MJE16004) POWER DERATING FACTOR 1.0 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 18. Power Derating 6 Motorola Bipolar Power Transistor Device Data 1000 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 16 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 17 and 18 may be found at any case temperature by using the appropriate curve on Figure 20. T J(pk) may be calculated from the data in Figure 15. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe 0perating Area and represents the voltage–current condition allowable pulling reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 17 gives the RBSOA characteristics. Table 1. Resistive Load Switching td and tr 0V H.P. 214 or Equiv. P.G. + Vdc ≈ 11 Vdc ts and tf 20 2N6191 ≈ – 35 V *IC + *IB RL RB = 33 Ω 50 0.02 µF – 10 µF H.P. 214 or Equiv. P.G. T.U.T. 100 A 0.02 µF RB2 1.0 µF VCC 2N5337 50 100 500 Vin ≈ 11 V VCC = 250 Vdc RL = 83 Ω IC = 3.0 Adc IB = 0.3 Adc –V +V 0V –5 V T.U.T. A 0V tr ≤ 15 ns *Tektronix *P–6042 or *Equivalent RB1 *IC *IB 50 VCC = 250 RL = 83 Ω IC = 3.0 Adc RL VCC IB1 = 0.3 Adc IB2 = 0.6 Adc For VBE(off) = 5.0 V RB1 = 33 Ω RB2 = 8.0 Ω RB2 = 0 Ω Note: Adjust – V to obtain desired VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data 7 Table 2. Inductive Load Switching 0.02 µF H.P. 214 or Equiv. P.G. + V ≈ 11 V 100 2N6191 20 + 0 – ≈ – 35 V 10 µF RB1 A RB2 0.02 µF 1.0 µF + – 50 2N5337 500 100 –V IC(pk) IC T1 +V VCE(pk) 0V *IC –V A VCE L T.U.T. IB1 MR856 T1 (ICpk) [ LcoilVCC IB *IB 50 Vclamp VCC IB2 T1 adjusted to obtain IC(pk) VCEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts Inductive Switching L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 *Tektronix *P–6042 or *Equivalent Scope — Tektronix 7403 or Equivalent Note: Adjust – V to obtain desired VBE(off) at Point A. TYPICAL INDUCTIVE SWITCHING WAVEFORMS tsv tfi, tc IC(pk) = 3.0 Amps IB1 = 0.3 Amp VBE(off) = 5.0 Volts VCE(pk) = 300 Volts TC = 25°C Time Base = 20 ns/cm IC(pk) = 3.0 Amps IB1 = 0.3 Amp VBE(off) = 5.0 Volts VCE(pk) = 300 Volts TC = 25°C Time Base = 20 ns/cm 8 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 9 Motorola reserves the right to make changes without further notice to any products herein. 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