ONSEMI MJE18004D2

Order this document
by MJE18004D2/D
SEMICONDUCTOR TECHNICAL DATA
!
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POWER TRANSISTORS
5 AMPERES
1000 VOLTS
75 WATTS
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The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
It’s characteristics make it also suitable for PFC application.
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Base Breakdown Voltage
VCBO
1000
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
ICM
5
10
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
PD
75
0.6
Watt
W/_C
TJ, Tstg
– 65 to 150
_C
RθJC
RθJA
1.65
62.5
_C/W
TL
260
_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
MJE18004D2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
450
547
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
1000
1100
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
µAdc
ICES
100
500
100
µAdc
IEBO
100
µAdc
OFF CHARACTERISTICS
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
VBE(sat)
Base–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
Vdc
@ TC = 25°C
@ TC = 125°C
0.8
0.7
1
0.9
@ TC = 25°C
@ TC = 125°C
0.9
0.8
1
0.9
@ TC = 25°C
@ TC = 125°C
0.38
0.55
0.5
0.75
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.45
0.75
0.75
1
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.9
1.6
1.5
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.25
0.28
0.5
0.6
(IC = 2 Adc, IB = 0.4 Adc)
VCE(sat)
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
Vdc
hFE
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
15
10
28
14
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
6
4
8
6
(IC = 1 Adc, VCE = 2.5 Vdc)
@ TC = 25°C
@ TC = 125°C
18
14
28
20
—
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
rising IB1 reaches
90% of final IB1
2
IC = 1 Adc
IB1 = 100 mA
VCC = 300 V
IC = 2 Adc
IB1 = 0.4 A
VCC = 300 V
@ 1 µs
@ TC = 25°C
@ TC = 125°C
@ 3 µs
@ TC = 25°C
@ TC = 125°C
3.1
9
@ 1 µs
@ TC = 25°C
@ TC = 125°C
11
18
@ 3 µs
@ TC = 25°C
@ TC = 125°C
1.4
8
VCE(dsat)
9
16
V
Motorola Bipolar Power Transistor Device Data
MJE18004D2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1.5
V
DIODE CHARACTERISTICS
VEC
Forward Diode Voltage
(IEC = 1 Adc)
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
0.96
0.72
@ TC = 25°C
@ TC = 125°C
1.15
0.8
tfr
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
(IF = 1 Adc, di/dt = 10 A/µs)
@ TC = 25°C
335
(IF = 2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
335
1.7
ns
440
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
60
100
pF
Input Capacitance
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Cib
450
750
pF
500
750
ns
1.4
µs
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
Turn–off Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 = 1 Adc
VCC = 250 Vdc
Turn–on Time
Turn–off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 300 Vdc
Turn–on Time
Turn–off Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C
ton
@ TC = 25°C
toff
@ TC = 25°C
@ TC = 125°C
ton
100
150
150
ns
@ TC = 25°C
@ TC = 125°C
toff
1.15
1.6
1.3
µs
@ TC = 25°C
@ TC = 125°C
ton
120
500
150
ns
@ TC = 25°C
@ TC = 125°C
toff
2.15
µs
1.1
1.85
2.6
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)
Fall Time
Storage Time
Crossover Time
IC = 2.5 Adc
IB1 = 500 mAdc
IB2 = 500 mAdc
VZ = 350 V
LC = 300 µH
Fall Time
Storage Time
Crossover Time
IC = 2 Adc
IB1 = 400 mAdc
IB2 = 400 mAdc
VZ = 300 V
LC = 200 µH
Fall Time
Storage Time
Crossover Time
IC = 1 Adc
IB1 = 100 mAdc
IB2 = 500 mAdc
VZ = 300 V
LC = 200 µH
Motorola Bipolar Power Transistor Device Data
@ TC = 25°C
@ TC = 125°C
tf
130
300
175
ns
@ TC = 25°C
@ TC = 125°C
ts
2.12
2.6
2.4
µs
@ TC = 25°C
@ TC = 125°C
tc
355
750
500
ns
@ TC = 25°C
@ TC = 125°C
tf
95
230
150
ns
@ TC = 25°C
@ TC = 125°C
ts
2.4
µs
@ TC = 25°C
@ TC = 125°C
tc
300
700
450
ns
@ TC = 25°C
@ TC = 125°C
tf
70
100
90
ns
@ TC = 25°C
@ TC = 125°C
ts
0.7
1.05
0.9
µs
@ TC = 25°C
@ TC = 125°C
tc
75
160
120
ns
2.1
2.9
3
MJE18004D2
TYPICAL STATIC CHARACTERISTICS
100
100
TJ = – 20°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 1 V
TJ = 25°C
10
TJ = 125°C
1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
TJ = – 20°C
Figure 1. DC Current Gain @ 1 Volt
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. DC Current Gain @ 5 Volt
3
10
TJ = 25°C
5A
2
4A
3A
2A
1
TJ = 125°C
IC/IB = 5
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
TJ = 25°C
10
1
0.001
10
VCE = 5 V
1A
TJ = 25°C
1
TJ = – 20°C
IC = 500 mA
0
0.01
0.1
1
IB, BASE CURRENT (mA)
0.1
0.001
10
Figure 3. Collector Saturation Region
10
IC/IB = 20
VCE , VOLTAGE (VOLTS)
TJ = 125°C
IC/IB = 10
VCE , VOLTAGE (VOLTS)
10
Figure 4. Collector–Emitter Saturation Voltage
10
1
TJ = 25°C
0.1
0.001
TJ = – 20°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector–Emitter Saturation Voltage
4
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
TJ = 125°C
TJ = – 20°C
1
TJ = 25°C
0.1
0.001
1
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector–Emitter Saturation Voltage
Motorola Bipolar Power Transistor Device Data
10
MJE18004D2
TYPICAL STATIC CHARACTERISTICS
10
10
IC/IB = 10
1
VBE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
IC/IB = 5
TJ = – 20°C
TJ = 125°C
0.1
0.001
TJ = 25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
TJ = – 20°C
TJ = 125°C
0.1
0.001
10
Figure 7. Base–Emitter Saturation Region
10
10
1
FORWARD DIODE VOLTAGE (VOLTS)
IC/IB = 20
VBE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Base–Emitter Saturation Region
10
TJ = – 20°C
TJ = 125°C
0.1
0.001
TJ = 25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
25°C
1
125°C
0.1
0.01
10
Figure 9. Base–Emitter Saturation Region
COLLECTOR EMITTER VOLTAGE (VOLTS)
Cib (pF)
1
0.1
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
10
Figure 10. Forward Diode Voltage
1000
C, CAPACITANCE (pF)
TJ = 25°C
TJ = 25°C
f(test) = 1 MHz
100
Cob
1200
TC = 25°C
BVCER @ ICER = 10 mA
1000
800
BVCER(sus) @
ICER = 200 mA,
Lc = 25 mH
600
10
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
Motorola Bipolar Power Transistor Device Data
100
10
100
BASE–EMITTER RESISTOR (Ω)
1000
Figure 12. BVCER = f(RBE)
5
MJE18004D2
TYPICAL SWITCHING CHARACTERISTICS
3200
5
TJ = 125°C
TJ = 25°C
4
IC/IB = 10
1600
800
3
2
1
TJ = 125°C
TJ = 25°C
IC/IB = 5
IC/IB = 5
0
0
1
3
2
IC, COLLECTOR CURRENT (AMPS)
4
1
Figure 13. Resistive Switch Time, ton
3
2
IC, COLLECTOR CURRENT (AMPS)
4
IC/IB = 5
IC/IB = 10
3
t, TIME ( µs)
t, TIME ( µs)
3
2
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
1
TJ = 125°C
TJ = 25°C
2
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
1
TJ = 125°C
TJ = 25°C
0
0
0
1
3
2
IC, COLLECTOR CURRENT (AMPS)
0
4
Figure 15. Inductive Storage Time,
tsi @ IC/IB = 5
1
3
2
IC, COLLECTOR CURRENT (AMPS)
4
Figure 16. Inductive Storage Time,
tsi @ IC/IB = 10
1000
1000
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
600
TJ = 125°C
TJ = 25°C
IC/IB = 5
800
tc
t, TIME (ns)
800
t, TIME (ns)
4
Figure 14. Resistive Switch Time, toff
4
400
tfi
200
IC/IB = 10
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 µH
600
400
200
0
0
0
2
3
IC, COLLECTOR CURRENT (AMPS)
1
Figure 17. Inductive Switching Time,
tc & tfi @ IC/IB = 5
6
IBon = IBoff
VCC = 300 V
PW = 20 µs
IC/IB = 10
t, TIME ( µs)
t, TIME (ns)
2400
IBon = IBoff
VCC = 300 V
PW = 20 µs
4
0
2
1
3
IC, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Switching Time,
tfi @ IC/IB = 10
Motorola Bipolar Power Transistor Device Data
4
MJE18004D2
TYPICAL SWITCHING CHARACTERISTICS
1600
5
t si , STORAGE TIME (µs)
1200
t, TIME (ns)
IC/IB = 10
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 µH
800
400
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
4
TJ = 125°C
TJ = 25°C
IC = 1 A
IC = 2 A
3
TJ = 125°C
TJ = 25°C
0
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
2
4
0
Figure 19. Inductive Switching, tc @ IC/IB = 10
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 2 A
t c , CROSSOVER TIME (ns)
t fi , FALL TIME (ns)
15
20
2000
TJ = 125°C
TJ = 25°C
IBoff = IBon
VCC = 15 V
800 VZ = 300 V
LC = 200 µH
600
IC = 1 A
400
200
0
1500
TJ = 125°C
TJ = 25°C
IC = 2 A
1000
500
IC = 1 A
0
2
4
6
8
10
12
14
hFE, FORCED GAIN
16
18
20
2
8
20
14
hFE, FORCED GAIN
Figure 21. Inductive Fall Time
Figure 22. Inductive Crossover Time
4
420
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
t fr , FORWARD RECOVERY TIME (ns)
IB = 50 mA
t, TIME ( µs)
10
hFE, FORCED GAIN
Figure 20. Inductive Storage Time
1000
3
5
2
IB = 100 mA
IB = 200 mA
IB = 500 mA I = 1 A
B
1
0.5
1
1.5
2
2.5
3
IC, COLLECTOR CURRENT (AMPS)
3.5
Figure 23. Inductive Storage Time, tsi
Motorola Bipolar Power Transistor Device Data
4
dI/dt = 10 A/µs
TC = 25°C
380
340
300
0
1.5
0.5
1
IF, FORWARD CURRENT (AMP)
2
Figure 24. Forward Recovery Time, TFR
7
MJE18004D2
TYPICAL SWITCHING CHARACTERISTICS
10
VCE
IC
9
dyn 1 µs
90% IC
tfi
8
dyn 3 µs
tsi
7
VOLTS
6
0V
Vclamp
5
10% IC
10% Vclamp
tc
4
IB
90% IB
3
1 µs
2
IB
90% IB1
1
2
1
3 µs
0
0
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
3
4
TIME
5
6
7
Figure 26. Inductive Switching Measurements
VFRM
VFR (1.1 VF unless otherwise specified)
VF
VF
tfr
0.1 VF
0
IF
10% IF
0
2
4
6
8
10
Figure 27. tfr Measurements
8
8
Motorola Bipolar Power Transistor Device Data
MJE18004D2
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
100 Ω
3W
150 Ω
3W
IC PEAK
100 µF
MTP8P10
VCE PEAK
MTP8P10
VCE
RB1
MPF930
MUR105
IB1
Iout
MPF930
+10 V
IB
A
50 Ω
COMMON
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
MTP12N10
150 Ω
3W
500 µF
IB2
RB2
MJE210
1 µF
–Voff
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired Ib1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired Ib1
TYPICAL CHARACTERISTICS
6
1 µs
10
1 ms
5 ms
10 µs
DC
1
EXTENDED
SOA
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
TC ≤ 125°C
GAIN ≥ 5
LC = 2 mH
5
4
3
2
–5 V
1
0V
–1.5 V
0
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 28. Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
200
600
400
800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 29. Reverse Bias Safe Operating Area
9
MJE18004D2
TYPICAL CHARACTERISTICS
POWER DERATING FACTOR
1.0
SECOND
BREAKDOWN
DERATING
0.8
0.6
0.4
THERMAL
DERATING
0.2
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 28 is based on T C = 25°C; T J (pk) is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC > 25°C. Second breakdown limitations do not derate the
same as thermal limitations. Allowable current at the
voltages shown on Figure 28 may be found at any case
temperature by using the appropriate curve on Figure 30.
TJ(pk) may be calculated from the data in Figure 31. At
any case temperatures, thermal limitations will reduce the
power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction
reverse biased. The safe level is specified as a reverse–
biased safe operating area (Figure 29). This rating is
verified under clamped conditions so that the device is
never subjected to an avalanche mode.
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
SINGLE PULSE
0.01
0.01
t2
DUTY CYCLE, D = t1/t2
0.1
1
10
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
100
1000
t, TIME (ms)
Figure 31. Typical Thermal Response (ZθJC(t)) for MJE18004D2
10
Motorola Bipolar Power Transistor Device Data
MJE18004D2
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
11
MJE18004D2
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12
◊
Motorola Bipolar Power Transistor Device Data
*MJE18004D2/D*
MJE18004D2/D