ONSEMI MJ10020

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SEMICONDUCTOR TECHNICAL DATA
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60 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
200 AND 250 VOLTS
250 WATTS
The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line operated switchmode applications such as:
•
•
•
•
•
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn–Off Times
150 ns Inductive Fall Time at 25_C (Typ)
750 ns Inductive Storage Time at 25_C (Typ)
• Operating Temperature Range –65 to + 200_C
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
CASE 197A–05
TO–204AE (TO–3)
≈ 100
≈ 15
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v
MAXIMUM RATINGS
Symbol
MJ10020
MJ10021
Unit
Collector–Emitter Voltage
Rating
VCEO
200
250
Vdc
Collector–Emitter Voltage
VCEV
300
350
Vdc
Emitter Base Voltage
VEB
8.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
60
100
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
20
30
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
PD
250
143
1.43
Watts
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
0.7
_C/W
TL
275
_C
Operating and Storage Junction Temperature Range
W/_C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
200
250
—
—
—
—
Vdc
—
—
—
—
0.25
5.0
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
MJ10020
MJ10021
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ICER
—
—
5.0
mAdc
Emitter Cutoff Current
(VEB = 2.0 V, IC = 0)
IEBO
—
—
175
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 13
RBSOA
See Figure 14
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 15 Adc, VCE = 5.0 V)
hFE
75
—
1000
—
—
—
—
—
—
2.2
4.0
2.4
—
—
—
—
3.0
3.5
Vf
—
2.5
5.0
Vdc
Cob
175
—
700
pF
td
—
0.02
0.2
µs
Collector–Emitter Saturation Voltage
(IC = 30 Adc, IB = 1.2 Adc)
(IC = 60 Adc, IB = 4.0 Adc)
(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 30 Adc, IB = 1.2 Adc)
(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)
VBE(sat)
Diode Forward Voltage
(IF = 30 Adc)
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
(VCC = 175 Vdc, IC = 30 A,
IB1 = Adc, VBE(off) = 5.0 V, tp = 25 µs
2.0%).
Duty Cycle
Fall Time
tr
—
0.30
1.0
µs
ts
—
1.0
3.5
µs
tf
—
0.07
0.5
µs
tsv
—
1.2
3.5
µs
tc
—
0.45
2.0
µs
tsv
—
0.75
—
µs
tc
—
0.25
—
µs
tfi
—
0.15
—
µs
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,
VBE(off) = 5 V, TC = 100°C)
Storage Time
Crossover Time
(ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,
VBE(off) = 5 V, TC = 25°C)
Fall Time
(1) Pulse Test: PW = 300 µs, Duty Cycle
2
2%.
Motorola Bipolar Power Transistor Device Data
hFE, DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 100°C
TJ = 25°C
200
100
70
50
30
VCE = 5.0 V
20
10
1.0
30
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMPS)
2.0
50
70
5.0
4.5
3.5
3.0
2.0
= 10 A
1.0
0.5
IC = 1.0 A
0.02
0.05
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IB, BASE CURRENT (AMPS)
10
Figure 2. Collector Saturation Region
3.0
3.0
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
= 30 A
1.5
Figure 1. DC Current Gain
2.7
2.4
IC/IB = 25
2.1
1.8
1.5
1.2
TJ = 25°C
0.9
TJ = 100°C
0.6
0.3
0.1
0.2
0.4
6.0 8.0 10
20
40
2.7
2.4
IC/IB = 25
2.1
TJ = 25°C
1.8
1.5
TJ = 100°C
1.2
0.9
0.6
0.3
0.1
60 80 100
2.0 3.0
5.0 7.0
10
20
30
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage
Figure 4. Base–Emitter Voltage
104
C, CAPACITANCE (pF)
TJ = 125°C
100°C
101
70 100
700
103
102
50
1000
VCE = 250 V
IC, COLLECTOR CURRENT ( µA)
= 60 A
2.5
0.01
100
TJ = 25°C
4.0
75°C
500
TJ = 25°C
300
200
100
25°C
10 –1
– 0.2
0
+ 0.2
+ 0.4
+ 0.6
+ 0.8
100
3.0
5.0 7.0
10
20
30
50
70 100
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
Figure 6. Output Capacitance
Motorola Bipolar Power Transistor Device Data
200
300
3
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
20 Ω
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
INDUCTIVE TEST CIRCUIT
TURN–ON TIME
1
1
CIRCUIT
VALUES
INPUT
CONDITIONS
5V
2
TUT
0
1
2
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
PW Varied to Attain
IC = 100 mA
2
Rcoil
1N4937
OR
EQUIVALENT
IB1
Lcoil
Vclamp
IB1 adjusted to
obtain the forced
hFE desired
VCC
TURN–OFF TIME
RS =
0.1 Ω
Use inductive switching
driver as the input to
the resistive test circuit.
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7 Ω
Vclamp = VCEO(sus)
VCC = 175 V
RL = 5.6 Ω
Pulse Width = 25 µs
OUTPUT WAVEFORMS
RESISTIVE TEST CIRCUIT
TEST CIRCUITS
t1 Adjusted to
Obtain IC
ICM
tf Clamped
t
t1
t1 ≈
tf
t2 ≈
VCEM
Vclamp
VCC
1
Lcoil (ICM)
2
RL
VCC
VClamp
Test Equipment
Scope — Tektronix
475 or Equivalent
t
TIME
TUT
Lcoil (ICM)
t2
* Adjust – V such that VBE(off) = 5 V except as required for RBSOA (Figure 14).
ā
10
VCEM
90% VCEM
IC
tsv
Vclamp
90% ICM
trv
tfi
tti
tc
VCE
IB
10% VCEM
10%
ICM
90% IB1
2% IC
9.0
I B2(pk), BASE CURRENT (AMPS)
ICM
8.0
7.0
6.0
5.0
IC = 30 A
IB1 = 1.2 A
VCLAMP = 200 V
TJ = 25°C
4.0
3.0
2.0
1.0
0
TIME
Figure 7. Inductive Switching Measurements
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Peak Reverse Base Current
2.4
3.2
t c , CROSSOVER TIME ( µ s)
2.8
2.1
2.4
1.8
2.0
1.5
1.6
tsv @ 100°C
1.2
1.2
tsv @ 25°C
0.8
0.6
tc @ 100°C
0.4
0
0.9
0.3
t sv, VOLTAGE STORAGE TIME ( µ s)
ICM = 30 A
IC/IB = 25
tc @ 25°C
0
1.0
5.0
6.0
7.0
2.0
3.0
4.0
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
8.0
Figure 9. Typical Inductive Switching Times
4
Motorola Bipolar Power Transistor Device Data
8.0
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10 – 90% VCEM
tfi = Current Fall Time, 90 – 10% ICM
tti = Current Tail, 10 – 2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222A:
PSWT = 1/2 VCC IC (tc) f
In general, t rv + t fi
t c. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
^
RESISTIVE SWITCHING
2.0
VCC = 175 V
IC/IB = 25
TJ = 25°C
1.0
0.7
0.5
0.3
0.2
1.0
0.7
0.5
t, TIME ( µs)
t, TIME ( µs)
10
7.0
5.0
3.0
2.0
tr
VCC = 175 V
IC/IB = 25
VBE(off) = 5 V
TJ = 25°C
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
tf
0.07
0.05
td
0.01
0.6 0.8 1.0
ts
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMPS)
40
60
0.03
0.02
Figure 10. Typical Turn–On Switching Times
0.6 0.81.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMPS)
40
60
Figure 11. Typical Turn–Off Switching Times
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.1
0.01
0.1
SINGLE PULSE
1.0
RθJC(t) = RθJC
RθJC(t) = 0.7°C/W MAX
DETERMINE t2 FOR POWER
PULSE AND READ r(t)
TJ(pk) = TC + P(pk) RθJC(t)
10
100
P(pk)
t1
1000
10000
t, TIME (ms)
Figure 12. Thermal Response
Motorola Bipolar Power Transistor Device Data
5
The Safe Operating Area figures shown in Figures 13 and are
specified for these devices under the test conditions shown.
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
100
10 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15.
T J(pk) may be calculated from the data in Figure 12. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
100 µs
10
1 ms
dc
1.0
TC = 25°C
0.1
0.01
1.0
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2.0
5.0
10
20
50
200 300
250
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
ICM , PEAK COLLECTOR CURRENT (AMPS)
Figure 13. Maximum Forward Bias Safe
Operating Area
REVERSE BIAS
100
90
IC/IB ≥ 25
25°C ≤ TJ ≤ 100°C
80
70
60
50
VBE(off) = 5 V
40
30
TURN–OFF LOAD LINE
BOUNDARY FOR MJ10021
THE LOCUS FOR MJ10020
IS 50 V LESS
20
10
0
0
50
100
150
VBE(off) = 2 V
VBE(off) = 0 V
250
200
For Inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 14 gives the RBSOA characteristics.
300
VCEM, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 14. Maximum RBSOA, Reverse Bias
Safe Operating Area
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN
DERATING
80
60
THERMAL
DERATING
40
20
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
160
200
Figure 15. Power Derating
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
K
2 PL
0.30 (0.012)
U
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T Q
M
M
Y
M
–Y–
L
2
H
G
B
M
T Y
1
–Q–
0.25 (0.010)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
Motorola Bipolar Power Transistor Device Data
7
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8
◊
Motorola Bipolar Power Transistor Device Data
*MJ10020/D*
MJ10020/D