Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V(BR)CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Fast Turn–Off Times 60 ns Inductive Fall Time — 25_C (Typ) 120 ns Inductive Crossover Time — 25_C (Typ) Operating Temperature Range –65 to + 200_C 100_C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltage Leakage Currents (125_C) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage (VBE = – 1.5 V) Symbol BUX48 BUX48A Unit VCEO(sus) VCEX 400 450 Vdc 850 1000 Vdc Emitter Base Voltage VEB 7 Vdc Collector Current — Continuous — Peak (1) — Overload IC ICM IOI 15 30 60 Adc Base Current — Continuous — Peak (1) IB IBM 5 20 Adc Total Power Dissipation — TC = 25_C — TC = 100_C Derate above 25_C PD 175 100 1 Watts TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 1 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. SWITCHMODE is a trademark of Motorola, Inc. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3–401 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 400 450 — — — — — — — — 0.2 2 — — — — 0.5 3 IEBO — — 0.1 mAdc V(BR)EBO 7 — — Vdc OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) L = 25 mH VCEO(sus) BUX48 BUX48A Collector Cutoff Current (VCEX = Rated Value, VBE(off) = 1.5 Vdc) (VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = Rated VCEX, RBE = 10 Ω) Vdc ICEX TC = 25_C TC = 125_C Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) Emitter–Base Breakdown Voltage (IE = 50 mA – IC = 0) mAdc ICER mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 12 RBSOA See Figure 13 ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE BUX48 BUX48A Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 15 Adc, IB = 3 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) (IC = 8 Adc, IB = 1.6 Adc) (IC = 12 Adc, IB = 2.4 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) 8 8 — — — — — — — — — — — — — — — — 1.5 5 2 1.5 5 2 — — — — — — — — 1.6 1.6 1.6 1.6 Cob — — 350 pF td — 0.1 0.2 µs tr — 0.4 0.7 ts — 1.3 2 tf — 0.2 0.4 tsv — 1.3 — tfi — 0.06 — tsv — 1.5 2.5 tc — 0.3 0.6 tfi — 0.17 0.35 VCE(sat) BUX48 BUX48A Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) (IC = 8 Adc, IB = 1.6 Adc) (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) Vdc VBE(sat) BUX48 BUX48A Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time IC = 10 A, IB = 2 A IC = 8 A, IB = 1.6 A Duty Cycle = 2%, VBE(off) = 5 V Tp = 30 µs, VCC = 300 V BUX48 BUX48A Inductive Load, Clamped (Table 1) Storage Time Fall Time IC = 10 A IB1 = 2 A BUX48 (TC = 25_C) Storage Time Crossover Time IC = 8 A IB1 = 1.6 A BUX48A Fall Time (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle Vcl = 300 V, VBE(off) = 5 V, Lc = 180µH 3–402 (TC = 100_C) µs 2%. Motorola Bipolar Power Transistor Device Data DC CHARACTERISTICS 90% 30 hFE, DC CURRENT GAIN VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 50 20 10% 10 7 5 3 2 VCE = 5 V 1 1 2 3 5 8 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 10 5 3 IC = 5 A VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 90% 2 10% 1 0.7 0.5 0.3 0.2 0.1 1 2 3 5 7 10 20 30 50 0.5 0.3 TC = 25°C 0.1 0.1 0.3 0.5 1 IB, BASE CURRENT (AMPS) 2 3 4 2 TJ = 25°C 1 0.7 TJ = 100°C 0.5 0.3 0.1 0.3 1 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage 104 10 10 k VCE = 250 V Cib 103 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µA) 15 A Figure 2. Collector Saturation Region βf = 5 3 10 A 1 Figure 1. DC Current Gain 5 7.5 A TJ = 150°C 102 101 125°C 100°C 75°C REVERSE 100 1k Cob 100 FORWARD TJ = 25°C 25°C 10–1 – 0.4 – 0.2 0 0.2 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data 0.6 10 1 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 6. Capacitance 3–403 Table 1. Test Conditions for Dynamic Performance INPUT CONDITIONS VCEO(sus) RBSOA AND INDUCTIVE SWITCHING 33 2W +10 V D1 160 1 20 220 22 µF RESISTIVE SWITCHING +10 V TURN–ON TIME 2N6438 1 D3 MR854 100 2 MM3735 0 IB1 22 680 pF Ib1 ADJUST D1 D2 D3 D4 1N4934 0.1 µF 2 680 pF PULSES δ = 3% 2N3763 D4 100 680 pF PW Varied to Attain IC = 200 mA Ib2 ADJUST dTb ADJUST 22 IB1 adjusted to obtain the forced hFE desired MR854 TURN–OFF TIME 160 33 2W D3 0.22 µF Use inductive switching driver as the input to the resistive test circuit. 2N6339 Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V Lcoil = 25 mH, VCC = 10 V Rcoil = 0.7 Ω TEST CIRCUITS INDUCTIVE TEST CIRCUIT Rcoil 1N4937 OR EQUIVALENT INPUT OUTPUT WAVEFORMS SEE ABOVE FOR DETAILED CONDITIONS IC(pk) Lcoil Vclamp VCC VCE or Vclamp t2 VCE(pk) 90% VCE(pk) 90% IC(pk) trv tfi tti tc 10% VCE(pk) 90% IB1 t TUT RL 1 2 VCC Test Equipment Scope — Tektronix 475 or Equivalent 10 IC pk VCE IB tf VCE TIME tsv tf Clamped t t1 RS = 0.1 Ω 2 IC RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC Lcoil (IC ) pk t1 ≈ VCC Lcoil (IC ) pk t2 ≈ VClamp IC TUT 1 VCC = 300 V RL = 83 Ω Pulse Width = 10 µs Vclamp = 300 V RB ADJUSTED TO ATTAIN DESIRED IB1 10% IC pk 2% IC IB2(pk) , BASE CURRENT (AMPS) CIRCUIT VALUES VCC 8 6 4 2 0 TIME βf = 5 IC = 10 A 0 1 2 3 4 5 VBE(off), BASE–EMITTER VOLTAGE (VOLTS) Figure 7. Inductive Switching Measurements 3–404 Figure 8. Peak–Reverse Current Motorola Bipolar Power Transistor Device Data 6 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 – 90% Vclamp tfi = Current Fall Time, 90 – 10% IC tti = Current Tail, 10 – 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. ] INDUCTIVE SWITCHING 1 5 3 0.5 2 t, TIME ( µs) t, TIME ( µs) TC = 25°C 1 0.7 TC = 100°C 0.3 TC = 100°C 0.5 TC = 100°C TC = 25°C 0.2 0.1 TC = 25°C 0.05 0.3 0.02 βf = 5 0.1 tc tfi 0.03 0.2 1 βf = 5 3 7 10 20 5 IC, COLLECTOR CURRENT (AMPS) 2 0.01 50 30 1 2 Figure 9. Storage Time, tsv 3 2 3 2 1 0.5 0.5 0.1 tfi t, TIME ( µs) 1 tc 0.05 0.01 0 1 2 3 6 4 5 βf, FORCED GAIN 7 50 8 9 0.3 0.2 tc 0.1 tfi 0.03 0.02 10 Figure 11a. Turn–Off Times versus Forced Gain Motorola Bipolar Power Transistor Device Data TC = 25°C IC = 10 A βf = 5 tsv 0.05 TC = 25°C IC = 10 A VBE(off) = 5 V 0.03 0.02 30 Figure 10. Crossover and Fall Times tsv 0.3 0.2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 0.01 0 1 2 3 4 5 Ib2/Ib1 6 7 8 9 10 Figure 11b. Turn–Off Times versus Ib2/Ib1 3–405 IC, COLLECTOR CURRENT (AMPS) The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. 30 10 5 2 1 0.5 0.2 TC = 25°C LIMIT ONLY FOR TURN ON 0.1 tr ≤ 0.7 µs 0.05 w 0.02 0.01 1 2 10 100 200 20 500 1000 5 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area REVERSE BIAS IC, COLLECTOR CURRENT (AMPS) 50 For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives RBSOA characteristics. 40 30 BUX48 BUX48A 20 VBE(off) = 5 V 10 0 FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1 ms DC SAFE OPERATING AREA INFORMATION TC = 100°C IC/IB1 ≥ 5 0 200 400 600 800 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 FIgure 13. Reverse Bias Safe Operating Area POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 200 Figure 14. Power Derating 3–406 Motorola Bipolar Power Transistor Device Data r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 RθJC(t) = r(t) RθJC θJC = 1°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.01 SINGLE PULSE 0.02 0.01 0.02 0.05 0.1 0.2 1 0.5 2 5 10 t, TIME (ms) 20 50 P(pk) t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 Figure 15. Thermal Response OVERLOAD CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 100 OLSOA TC = 25°C 80 BUX48A 60 tp = 10 µs 40 BUX48 20 0 200 100 300 400 450 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 500 Figure 16. Rated Overload Safe Operating Area (OLSOA) OLSOA applies when maximum collector current is limited and known. A good example is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. Maximum allowable collector–emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drive.) Storage time of the transistor has been factored into the curve. Therefore, with bus voltage and maximum collector current known, Figure 16 defines the maximum time which can be allowed for fault detection and shutdown of base drive. OLSOA is measured in a common–base circuit (Figure 18) which allows precise definition of collector–emitter voltage and collector current. This is the same circuit that is used to measure forward–bias safe operating area. 5 IC (AMP) 4 3 RBE = 10 Ω RBE = 100 Ω 500 µF 500 V RBE = 2.2 Ω 2 1 VCC Notes: • VCE = VCC + VBE • Adjust pulsed current source for desired IC, tp RBE = 0 0 2 4 6 dV/dt (KV/µs) Figure 17. IC = f(dV/dt) Motorola Bipolar Power Transistor Device Data 8 VEE 10 Figure 18. Overload SOA Test Circuit 3–407 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 3–408 ◊ Motorola Bipolar Power Transistor Device Data *BUX48/D* BUX48/D