Order this document by BUH150/D SEMICONDUCTOR TECHNICAL DATA POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the start–up conditions or under a short circuit across the load. This High voltage/High speed product exhibits the following main features: • Improved Efficiency Due to the Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching • Robustness Thanks to the Technology Developed to Manufacture this Device • Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric Distributions ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 221A–06 TO–220AB MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Sustaining Voltage Rating VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous — Peak (1) IC ICM 15 25 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 6 12 Adc *Total Device Dissipation @ TC = 25_C *Derate above 25°C PD 150 1.2 Watt W/_C TJ, Tstg – 65 to 150 _C RθJC RθJA 0.85 62.5 TL 260 Operating and Storage Temperature THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds _C/W _C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BUH150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 460 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.3 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C ICES 100 1000 µAdc Collector Base Current (VCB = Rated VCBO, VEB = 0) @ TC = 25°C @ TC = 125°C ICBO 100 1000 µAdc IEBO 100 µAdc Emitter–Cutoff Current (VEB = 9 Vdc, IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) Collector–Emitter Saturation Voltage (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25°C @ TC = 125°C VBE(sat) 1 1.25 Vdc VCE(sat) 0.16 0.15 0.4 0.4 Vdc (IC = 10 Adc, IB = 2 Adc) @ TC = 25°C 0.45 1 Vdc (IC = 20 Adc, IB = 4 Adc) @ TC = 25°C 2 5 Vdc DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) @ TC = 25°C @ TC = 125°C DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) hFE 4 2.5 7 4.5 @ TC = 25°C @ TC = 125°C 8 6 12 10 — DC Current Gain (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 12 14 20 22 — DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) @ TC = 25°C 10 20 — 1.5 V — DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 3 µs after rising IB1 reaches 90% of final IB1 (see Figure 19) VCE(dsat) IC = 5 Adc, IB1 = 1 Adc VCC = 300 V @ TC = 25°C @ TC = 125°C 2.8 V IC = 10 Adc, IB1 = 2 Adc VCC = 300 V @ TC = 25°C 2.4 V @ TC = 125°C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Cib 1300 1750 pF 2 Motorola Bipolar Power Transistor Device Data DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) BUH150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs) Turn–on Time Storage Time Fall Time IC = 2 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc @ TC = 25°C ton 200 300 ns @ TC = 25°C ts 5.3 6.5 µs @ TC = 25°C tf 240 350 ns Turn–off Time @ TC = 25°C toff 5.6 7 µs Turn–on Time @ TC = 25°C ton 100 200 ns @ TC = 25°C ts 6.1 7.5 µs @ TC = 25°C tf 320 500 ns @ TC = 25°C toff 6.5 8 µs @ TC = 25°C @ TC = 125°C ton 450 800 650 ns @ TC = 25°C @ TC = 125°C toff 2.5 3.9 3 µs @ TC = 25°C @ TC = 125°C ton 500 900 700 ns @ TC = 25°C @ TC = 125°C toff 2.25 2.75 2.75 µs Storage Time Fall Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc Turn–off Time Turn–on Time Turn–off Time IC = 5 Adc, IB1 = 0.5 Adc IB2 = 0.5 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 10 Adc, IB1 = 2 Adc IB2 = 2 Adc VCC = 300 Vdc SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tfi 110 160 250 ns @ TC = 25°C @ TC = 125°C tsi 6.5 8 8 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 235 240 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 170 250 ns @ TC = 25°C @ TC = 125°C tsi 6 7.8 7.5 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 250 270 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 140 150 ns @ TC = 25°C @ TC = 125°C tsi 3.25 4.6 3.75 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 275 450 350 ns Fall Time @ TC = 25°C @ TC = 125°C tfi 110 160 175 ns @ TC = 25°C @ TC = 125°C tsi 2.3 2.8 2.75 µs @ TC = 25°C @ TC = 125°C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time IC = 2 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 5 Adc IB1 = 0.5 Adc IB2 = 0.5 Adc IC = 10 Adc IB1 = 2 Adc IB2 = 2 Adc Crossover Time Motorola Bipolar Power Transistor Device Data 3 BUH150 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V VCE = 3 V TJ = – 20°C 10 1 0.001 0.01 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C TJ = 25°C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C TJ = – 20°C 10 1 0.001 100 Figure 1. DC Current Gain @ 1 Volt 100 10 IC/IB = 5 VCE = 5 V TJ = 125°C TJ = – 20°C 10 1 0.01 VCE , VOLTAGE (VOLTS) TJ = 125°C hFE , DC CURRENT GAIN 0.1 1 10 0.01 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volt 100 TJ = 25°C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 1 TJ = 25°C TJ = – 20°C 0.1 0.01 0.001 100 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. Collector–Emitter Saturation Voltage Figure 3. DC Current Gain @ 5 Volt 10 1.5 IC/IB = 5 VBE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) TJ = 25°C 1 TJ = 125°C 0.1 1 TJ = – 20°C TJ = 25°C 0.5 TJ = 125°C TJ = 25°C 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 5. Collector–Emitter Saturation Voltage 4 0 0.001 10 0.01 1 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base–Emitter Saturation Region Motorola Bipolar Power Transistor Device Data 100 BUH150 TYPICAL STATIC CHARACTERISTICS 1.5 2 TJ = 25°C VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 10 1 TJ = – 20°C TJ = 25°C 0.5 TJ = 125°C 1.5 1 20 A 15 A VCE(sat) (IC = 1 A) 0.5 5A 0 0.001 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.01 100 Figure 7. Base–Emitter Saturation Region 1 IB, BASE CURRENT (A) 10 100 Figure 8. Collector Saturation Region 10000 900 Cib (pF) TJ = 25°C TJ = 25°C f(test) = 1 MHz 1000 Cob (pF) 100 BVCER @ 10 mA 800 BVCER (VOLTS) C, CAPACITANCE (pF) 0.1 8A 10 A 700 BVCER(sus) @ 200 mA 600 500 400 10 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitance Motorola Bipolar Power Transistor Device Data 100 10 100 RBE (Ω) 1000 Figure 10. Resistive Breakdown 5 BUH150 TYPICAL SWITCHING CHARACTERISTICS 12 2000 1800 IB1 = IB2 VCC = 300 V PW = 40 µs 1600 IC/IB = 10 10 25°C 8 125°C 1200 1000 t, TIME ( µs) t, TIME (ns) 1400 125°C 800 TJ = 25°C TJ = 125°C IC/IB = 5 6 4 600 400 IC/IB = 10 2 25°C 200 IC/IB = 5 0 0 0 3 9 12 6 IC, COLLECTOR CURRENT (AMPS) 15 15 Figure 12. Resistive Switch Time, toff 8 8 6 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 10 7 6 t, TIME ( µs) IC/IB = 5 7 t, TIME ( µs) 5 10 IC, COLLECTOR CURRENT (AMPS) 0 Figure 11. Resistive Switching, ton 5 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 5 4 3 3 2 2 TJ = 125°C TJ = 25°C 1 TJ = 125°C TJ = 25°C 1 0 0 1 3 5 9 11 7 IC, COLLECTOR CURRENT (AMPS) 13 1 15 Figure 13. Inductive Storage Time, tsi 4 7 IC, COLLECTOR CURRENT (AMPS) 10 Figure 13 Bis. Inductive Storage Time, tsi 550 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 450 TJ = 125°C TJ = 25°C IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 700 600 tc 350 250 t, TIME (ns) t, TIME (ns) IB1 = IB2 VCC = 300 V PW = 20 µs tfi TC = 125°C TC = 25°C 500 tc 400 300 tfi 200 150 100 0 50 1 3 5 7 9 11 IC, COLLECTOR CURRENT (AMPS) 13 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 6 15 0 2 8 4 6 IC, COLLECTOR CURRENT (AMPS) Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 Motorola Bipolar Power Transistor Device Data 10 BUH150 TYPICAL SWITCHING CHARACTERISTICS 5 200 IC = 5 A 150 t fi , FALL TIME (ns) tsi , STORAGE TIME (µs) 4 3 2 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH 1 0 2 TJ = 125°C TJ = 25°C 100 IC = 5 A 50 IC = 10 A 4 TJ = 125°C TJ = 25°C 6 hFE, FORCED GAIN 8 10 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 10 A 0 3 5 4 6 7 hFE, FORCED GAIN 8 9 10 Figure 17. Inductive Fall Time Figure 16. Inductive Storage Time 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 µH t c , CROSSOVER TIME (ns) 700 600 TJ = 125°C TJ = 25°C IC = 10 A 500 400 IC = 5 A 300 200 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 Figure 18. Inductive Crossover Time Motorola Bipolar Power Transistor Device Data 7 BUH150 TYPICAL SWITCHING CHARACTERISTICS 10 VCE IC 9 dyn 1 µs 90% IC 8 7 dyn 3 µs tfi tsi 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 90% IB 3 1 µs 2 IB IB 90% IB1 1 2 1 3 µs 0 0 3 TIME Figure 19. Dynamic Saturation Voltage Measurements 4 TIME 5 6 7 8 Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 µF 150 Ω 3W 100 Ω 3W IC PEAK 100 µF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A 50 Ω MJE210 COMMON 150 Ω 3W 500 µF IB2 RB2 MTP12N10 1 µF –Voff Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 120 100 TC, CASE TEMPERATURE (°C) 140 160 Figure 21. Forward Bias Power Derating 8 Motorola Bipolar Power Transistor Device Data BUH150 TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on T C = 25°C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. 16 IC, COLLECTOR CURRENT (AMPS) 1 µs 10 µs 10 5 ms EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 1 ms DC 1 0.1 0.01 1 100 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) GAIN ≥ 5 14 12 10 8 6 –5 V 4 0V 2 0 300 1000 TC ≤ 125°C LC = 4 mH Figure 22. Forward Bias Safe Operating Area –1.5 V 800 400 500 600 700 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 23. Reverse Bias Safe Operating Area TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RθJC(t) = r(t) RθJC RθJC = 0.83°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 10 100 1000 t, TIME (ms) Figure 24. Typical Thermal Response (ZθJC(t)) for BUH150 Motorola Bipolar Power Transistor Device Data 9 BUH150 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Bipolar Power Transistor Device Data *BUH150/D* BUH150/D