Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20 V, –3.0 A, 120 m: Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. Max rDS(on) = 120 m: at VGS = –4.5 V, ID = –3.0 A Max rDS(on) = 160 m: at VGS = –2.5 V, ID = –2.5 A Max rDS(on) = 240 m: at VGS = –1.8 V, ID = –1.0 A The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Schottky: VF < 0.54 V @ 1 A Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin Free from halogenated compounds and antimony oxides RoHS compliant Pin 1 NC A C MicroFET 2x2 Thin G D A 1 6 C NC 2 5 G D 3 4 S S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Ratings –20 ±8 Drain Current -Continuous ID (Note 1a) -Pulsed PD –3 –6 Power Dissipation (Note 1a) 1.4 Power Dissipation (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current Units V V A W –55 to +150 °C 30 V 1 A Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 86 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 173 RTJA Thermal Resistance, Junction to Ambient (Note 1c) 86 RTJA Thermal Resistance, Junction to Ambient (Note 1d) 140 °C/W Package Marking and Ordering Information Device Marking 59 Device FDFMA2P859T ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B Package MicroFET 2x2 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode July 2009 FDFMA2P859T Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = –250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA –1.3 V –20 V –12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250 PA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance –0.4 –0.7 2 mV/°C VGS = –4.5 V, ID = –3.0 A 90 120 VGS = –2.5 V, ID = –2.5 A 120 160 VGS = –1.8 V, ID = –1.0 A 172 240 VGS = –4.5 V, ID = –3.0 A TJ = 125 °C 118 160 VDS = –5 V, ID = –3.0 A 7 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V, f = 1.0 MHz 435 pF 80 pF 45 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –10 V, ID = –1.0 A VGS = –4.5 V, RGEN = 6 : VDD= –10 V, ID = –3.0 A VGS = –4.5 V 9 18 ns 11 19 ns 15 27 ns 6 12 ns 4 6 nC 0.8 nC 0.9 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = –1.1 A trr Reverse Recovery Time Qrr Reverse Recovery Charge –1.1 (Note 2) IF = –3.0 A, di/dt = 100 A/Ps –0.8 –1.2 A V 17 ns 6 nC Schottky Diode Characteristics IR IR VF VF Reverse Leakage Reverse Leakage Forward Voltage Forward Voltage ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B VR = 10 V VR = 20 V IF = 100 mA IF = 1 A 2 PA TJ = 25 °C 0.3 1.0 TJ = 85 °C 25 40 PA TJ = 125 °C 0.28 0.37 mA PA TJ = 25 °C 1.0 2.5 TJ = 85 °C 74 110 PA TJ = 125 °C 0.73 1.00 mA TJ = 25 °C 0.40 0.41 V TJ = 85 °C 0.31 0.33 V TJ = 125 °C 0.26 0.27 V TJ = 25 °C 0.52 0.54 V TJ = 85 °C 0.45 0.47 V TJ = 125 °C 0.41 0.43 V www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted Notes: 1: RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. (a) MOSFET RTJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. (b) MOSFET RTJA = 173 oC/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RTJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. (d) Schottky RTJA = 140 oC/W when mounted on a minimum pad of 2 oz copper. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)140 oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 3 www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25 °C unless otherwise noted 6 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5 V 5 VGS = -2 V VGS = -3.5 V 4 3 VGS = -1.8 V VGS = -3 V VGS = -2.5 V 2 1 PULSE DURATION = 300 Ps DUTY CYCLE = 2% MAX VGS = -1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 300 Ps DUTY CYCLE = 2%MAX 2.5 VGS = -1.5 V VGS = -1.8 V 2.0 VGS = -2.5 V 1.5 1.0 0 VGS = -4.5 V 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 0.28 ID = -3.0 A VGS = -4.5 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 SOURCE ON-RESISTANCE (:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V VGS = -3 V 0.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 300 Ps DUTY CYCLE = 2% MAX 0.24 ID = -1.5 A 0.20 0.16 TJ = 125 oC 0.12 0.08 TJ = 25 oC 0.8 -50 -25 0 25 50 75 100 125 0.04 150 0 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On- Resistance vs Junction Temperature 10 6 PULSE DURATION = 300 Ps DUTY CYCLE = 2% MAX 5 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -2 V VDS = -5 V 4 3 2 TJ = 125 oC TJ = 25 oC 1 TJ = -55 oC 0 VGS = 0 V 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0001 0 0.5 1.0 1.5 2.0 2.5 0 0.4 0.6 0.8 1.0 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 0.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) 4 www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 5 700 ID = -3.0 A 600 CAPACITANCE (pF) 4 VDD = -5 V 3 VDD = -10 V 2 VDD = -15 V 500 Ciss 400 300 200 f = 1 MHz VGS = 0 V Coss 1 100 0 0 1 2 3 4 Crss 0 0 5 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 10 IF, FORWARD CURRENT (A) -ID, DRAIN CURRENT (A) 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RTJA = 173 oC/W TJ = 125 oC 1 TJ = 25 oC 0.1 TA = 25 oC 0.01 0.1 1 0.01 50 10 0 0.2 -VDS, DRAIN to SOURCE VOLTAGE (V) 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Schottky Diode Foward Voltage 10000 200 1000 TJ = 125 oC 100 TJ = 85 oC P(PK), PEAK TRANSIENT POWER (W) IR, REVERSE LEAKAGE CURRENT (mA) 0.4 10 TJ = 25 oC 1 0.1 0.01 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) VGS = -10 V SINGLE PULSE RTJA = 173 oC/W 10 TA = 25 oC 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Schottky Diode Reverse Current ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 100 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 173 C/W 0.01 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction to Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 6 www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 8 www.fairchildsemi.com FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ PowerTrench® FPS™ The Power Franchise® Auto-SPM™ PowerXS™ F-PFS™ ® Build it Now™ FRFET® Programmable Active Droop™ CorePLUS™ Global Power ResourceSM QFET® TinyBoost™ CorePOWER™ Green FPS™ QS™ TinyBuck™ CROSSVOLT™ Green FPS™ e-Series™ Quiet Series™ TinyCalc™ CTL™ Gmax™ RapidConfigure™ TinyLogic® Current Transfer Logic™ GTO™ TINYOPTO™ EcoSPARK® IntelliMAX™ ™ TinyPower™ EfficentMax™ Saving our world, 1mW /W /kW at a time™ ISOPLANAR™ TinyPWM™ EZSWITCH™* SmartMax™ MegaBuck™ TinyWire™ ™* SMART START™ MICROCOUPLER™ TriFault Detect™ SPM® MicroFET™ TRUECURRENT™* STEALTH™ MicroPak™ ® SuperFET™ MillerDrive™ ® Fairchild SuperSOT™-3 MotionMax™ Fairchild Semiconductor® UHC® SuperSOT™-6 Motion-SPM™ FACT Quiet Series™ Ultra FRFET™ SuperSOT™-8 OPTOLOGIC® ® FACT OPTOPLANAR® UniFET™ SupreMOS™ ® ® FAST VCX™ SyncFET™ FastvCore™ VisualMax™ Sync-Lock™ FETBench™ XS™ ®* PDP SPM™ ® FlashWriter * Power-SPM™