FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ Features General Description MOSFET This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage. Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Schottky VF < 0.37V @ 500mA Application Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm DC - DC Conversion RoHS Compliant Pin 1 A C NC D A 1 6 C NC 2 5 G D 3 4 S S G MicroFET 2X2 MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD Ratings 20 Units V ±12 V 3.7 6 Power Dissipation (Note 1a) 1.4 Power Dissipation (Note 1b) 0.7 A W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C VRR Schottky Repetitive Peak Reverse Voltage 20 V IO Schottky Average Forward Current 2 A Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 86 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 173 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 86 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 140 °C/W Package Marking and Ordering Information Device Marking .N28 Device FDFMA2N028Z ©2008 Fairchild Semiconductor Corporation FDFMA2N028Z Rev.B1 Package MicroFET 2X2 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode March 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 20 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±10 μA 1.5 V mV/°C 15 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C –4 VGS = 4.5V, ID = 3.7A 37 rDS(on) Static Drain to Source On Resistance VGS = 2.5V, ID = 3.3A 50 86 VGS = 4.5V, ID = 3.7A, TJ = 125°C 53 90 VDS = 10V, ID = 3.7A 16 gFS Forward Trans conductance 0.6 1.0 mV/°C 68 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz 340 455 pF 80 110 pF 60 90 pF 8 16 ns 8 16 ns 14 26 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω VDS = 10V ID = 3.7A VGS = 4.5V 3 6 ns 4 6 nC 0.7 nC 1.1 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 1.1A (Note 2) 0.7 IF = 3.7A, di/dt = 100A/μs 1.1 A 1.2 V 11 ns 2 nC Schottky Diode Characteristics VR IR Reverse Voltage Reverse Leakage IR = 1mA TJ = 25°C TJ = 25°C VR = 20V IF = 500mA VF Forward Voltage IF = 1A FDFMA2N028Z Rev.B1 2 20 V 30 300 μA mA TJ = 125°C 10 45 TJ = 25°C 0.32 0.37 TJ = 125°C 0.21 0.26 TJ = 25°C 0.37 0.435 TJ = 125°C 0.28 0.33 V www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (b) MOSFET RθJA = 173oC/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) Schottky RθJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2N028Z Rev.B1 3 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) 5 VGS = 4.5V 4 VGS = 3.0V VGS = 2.5V 3 2 VGS = 2.0V PULSE DURATION = 300μs DUTY CYCLE = 2%MAX 1 VGS = 1.5V 0 0.0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 1.6 1.4 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On- Resistance vs Junction Temperature VDD=5V PULSE DURATION = 300μs DUTY CYCLE = 2%MAX 4 3 TJ 2 = 125oC TJ = 25oC 1 0 0.5 TJ = -55oC 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 3.5V 1.0 0.8 VGS = 4.5V 0 1 2 3 4 ID, DRAIN CURRENT(A) ID = 1.85A 125 5 6 PULSE DURATION = 300μs DUTY CYCLE = 2%MAX 100 TJ = 125oC 75 50 25 TJ = 25oC 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 10 VGS = 0V 1 0.1 TJ = 125oC TJ = 25oC 0.01 0.001 0.0001 0.0 2.5 Figure 5. Transfer Characteristics FDFMA2N028Z Rev.B1 VGS = 3.0V 1.2 Figure 4. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 5 VGS = 2.5V 1.4 150 ID = 3.7A VGS = 4.5V 1.2 0.6 -50 1.6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics PULSE DURATION = 300μs DUTY CYCLE =2%MAX VGS = 2.0V 1.8 TJ = -55oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 1000 VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 3.7A Ciss VDD = 15V VDD = 5V 6 CAPACITANCE (pF) 8 4 VDD = 10V 2 0 2 4 6 Qg, GATE CHARGE(nC) 8 Crss f = 1MHz VGS = 0V 10 0.1 10 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 20 10 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 0 Coss 100 rDS(on) LIMIT 100us 1ms 1 10ms VGS=4.5V 0.1 100ms SINGLE PULSE R 1s 10s DC o =173 θJA C/W o TA = 25 C 0.01 0.1 1 10 60 SINGLE PULSE o RθJA = 173 C/W 40 o TA=25 C 30 20 SINGLE PULSE 10 0 -4 10 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area IR, REVERSE LEAKAGE CURRENT (mA) IF, FORWARD CURRENT(A) TJ = 125oC 1 TJ = 85oC 0.01 0.001 TJ = 25oC 0 200 400 600 VF, FORWARD VOLTAGE(mV) 800 Figure 11. Schottky Diode Forward Current FDFMA2N028Z Rev.B1 -2 -1 0 1 2 10 10 10 10 t, PULSE WIDTH (s) 10 3 10 Figure 10. Single Pulse Maximum Power Dissipation 10 0.1 20 100 TJ = 125oC 10 1 TJ = 85oC 0.1 0.01 0.001 TJ = 25oC 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 12. Schottky Diode Reverse Current 5 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 0.005 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2N028Z Rev.B1 6 www.fairchildsemi.com FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA2N028Z Rev.B1 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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