FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ Features General Description Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A improve the overall efficiency and to minimize switch node High performance trench technologh for extremely low rDS(on) ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized High power and current handing capability in a widely used surface mount package for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. 100% UIL Tested Applications RoHS Compliant Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch D D D D G D 5 4 D 6 3 S D 7 2 S D 8 1 S G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 60 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 18 -Pulsed 120 ID Parameter Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 194 Power Dissipation TC = 25 °C (Note 1) 5.0 Power Dissipation TA = 25 °C (Note 1a) 2.5 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS86540 Device FDS86540 ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C Package SO-8 1 Reel Size 13’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET May 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 60 V 28 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.1 -11 mV/°C VGS = 10 V, ID = 18 A 3.7 4.5 VGS = 8 V, ID = 16.5 A 4.2 5.4 VGS = 10 V, ID = 18 A, TJ = 125 °C 5.9 7 VDS = 10 V, ID = 18 A 69 VDS = 30 V, VGS = 0 V, f = 1 MHz 4820 6410 pF 1610 2145 pF 67 130 pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 0.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 8 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 18 A, VGS = 10 V, RGEN = 6 Ω VDD = 30 V, ID = 18 A 28 45 ns 15 27 ns 33 53 ns 7.1 15 ns 65 90 nC 53 75 nC 22 nC 13 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 18 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.7 1.2 IF = 18 A, di/dt = 100 A/μs V 57 92 ns 44 71 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 36 A, VDD = 54 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C 2 www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 8 VGS = 10 V VGS = 6 V VGS = 8 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 90 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 VGS = 5.5 V 30 VGS = 5 V 0 0 1 2 3 4 5 6 VGS = 5.5 V 4 VGS = 6 V 2 VGS = 8 V VGS = 10 V 0 0 30 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics ID = 18 A VGS = 10 V rDS(on), DRAIN TO 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 20 1.6 IS, REVERSE DRAIN CURRENT (A) 90 VDS = 5 V 60 TJ = 150 oC TJ = 25 oC 30 TJ = -55 oC 4 5 6 10 TJ = 125 oC 5 TJ = 25 oC 200 100 5 6 7 8 9 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C 15 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) 120 2 ID = 18 A 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.7 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted Ciss VDD = 20 V ID = 18 A 8 VDD = 30 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10000 10 6 VDD = 40 V 4 1000 Coss 100 2 Crss f = 1 MHz VGS = 0 V 0 0 10 20 30 40 50 60 10 0.1 70 1 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJA = 50 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.1 1 10 15 VGS = 10 V VGS = 8 V 10 5 0 25 100 300 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 μs 10 1 ms 0.1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s Rθ JA = 125 oC/W 10 s TA = 25 oC 0.01 0.01 0.1 DC 1 10 100 300 VDS, DRAIN to SOURCE VOLTAGE (V) 150 2000 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C 125 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 200 100 THIS AREA IS LIMITED BY rDS(on) 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C 5 www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C 6 www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* ® ® Green Bridge™ QFET BitSiC TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ Current Transfer Logic™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR ®* FETBench™ XS™ FlashWriter® * ® FPS™