FDFMA2P853T tm Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20 V, –3.0 A, 120 mΩ Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. Max rDS(on) = 120 mΩ at VGS = –4.5 V, ID = –3.0 A Max rDS(on) = 160 mΩ at VGS = –2.5 V, ID = –2.5 A Max rDS(on) = 240 mΩ at VGS = –1.8 V, ID = –1.0 A The MicroFET 2x2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Schottky: VF < 0.46 V @ 500 mA Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin RoHS Compliant Free from halogenated compounds and antimony oxides Pin 1 NC A MicroFET 2X2 Thin C G D A 1 6 C NC 2 5 G D 3 4 S S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD Ratings –20 Units V ±8 V –3.0 –6 Power Dissipation TA = 25 °C (Note 1a) 1.4 Power Dissipation TA = 25 °C (Note 1b) 0.7 A W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C VRRM Schottky Repetitive Peak Reverse Voltage 30 V IO Schottky Average Forward Current 1 A Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 86 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 173 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 86 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 140 °C/W Package Marking and Ordering Information Device Marking 53 Device FDFMA2P853T ©2008 Fairchild Semiconductor Corporation FDFMA2P853T Rev.B1 Package MicroFET 2x2 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA –1.3 V –20 V –12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250 µA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance –0.4 –0.7 2 mV/°C VGS = –4.5 V, ID = –3.0 A 90 120 VGS = –2.5 V, ID = –2.5 A 120 160 VGS = –1.8 V, ID = –1.0 A 172 240 VGS = –4.5 V, ID = –3.0 A TJ = 125 °C 118 160 VDS = –5 V, ID = –3.0 A 7 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V, f = 1.0 MHz 435 pF 80 pF 45 pF Switching Characteristics td(on) Turn-On Delay Time 9 18 ns tr Rise Time 11 19 ns td(off) Turn-Off Delay Time 15 27 ns tf Fall Time 6 12 ns 4 6 Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –10 V, ID = –1.0 A VGS = –4.5 V, RGEN = 6 Ω VDD= –10 V, ID = –3.0 A VGS = –4.5 V nC 0.8 nC 0.9 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = –1.1 A trr Reverse Recovery Time Qrr Reverse Recovery Charge –1.1 (Note 2) IF = –3.0 A, di/dt = 100 A/µs –0.8 –1.2 A V 17 ns 6 nC Schottky Diode Characteristics IR Reverse Leakage VR = 5 V IR Reverse Leakage VR = 20 V VF VF Forward Voltage Forward Voltage FDFMA2P853T Rev.B1 IF = 500 mA IF = 1 A 2 TJ = 25 °C 9.9 50 µA TJ = 125 °C 2.3 10 mA TJ = 25 °C 9.9 100 µA TJ = 85 °C 0.3 1 mA TJ = 125 °C 2.3 10 mA TJ = 25 °C 0.4 0.46 V TJ = 125 °C 0.3 0.35 V TJ = 25 °C 0.5 0.55 V TJ = 125 °C 0.49 0.54 V www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. (b) MOSFET RθJA = 173 oC/W when mounted on a minimum pad of 2 oz copper. (c) Schottky RθJA = 86 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. (d) Schottky RθJA = 140 oC/W when mounted on a minimum pad of 2 oz copper. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)140 oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. FDFMA2P853T Rev.B1 3 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25 °C unless otherwise noted 6 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5 V 5 VGS = -2 V VGS = -3.5 V 4 3 VGS = -1.8 V VGS = -3 V VGS = -2.5 V 2 1 PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX VGS = -1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 300 µs DUTY CYCLE = 2%MAX 2.5 VGS = -1.5 V VGS = -1.8 V 2.0 VGS = -2.5 V 1.5 1.0 0 VGS = -4.5 V 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 0.28 ID = -3.0 A VGS = -4.5 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V VGS = -3 V 0.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX 0.24 ID = -1.5 A 0.20 0.16 TJ = 125 oC 0.12 0.08 TJ = 25 oC 0.8 -50 -25 0 25 50 75 100 125 0.04 150 0 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 10 6 PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX 5 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -2 V VDS = -5 V 4 3 2 TJ = 125 oC TJ = 25 oC 1 TJ = -55 oC 0 VGS = 0 V 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0001 0 0.5 1.0 1.5 2.0 2.5 0 Figure 5. Transfer Characteristics FDFMA2P853T Rev.B1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted 700 ID = -3.0 A 600 4 VDD = -5 V 500 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 5 3 VDD = -10 V 2 VDD = -15 V Ciss 400 300 200 f = 1 MHz VGS = 0 V Coss 1 100 0 0 1 2 3 4 Crss 0 0 5 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 10 IF, FORWARD CURRENT (A) -ID, DRAIN CURRENT (A) 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 173 oC/W TJ = 125 oC 1 0.1 TJ = 25 oC 0.01 TA = 25 oC 0.01 0.1 1 0.001 50 10 0 0.2 -VDS, DRAIN to SOURCE VOLTAGE (V) 0.6 0.8 VF, FORWARD VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Schottky Diode Foward Voltage 10 200 P(PK), PEAK TRANSIENT POWER (W) IR, REVERSE LEAKAGE CURRENT (mA) 0.4 TJ = 125 oC 1 TJ = 85 oC 0.1 0.01 TJ = 25 oC 0.001 0 4 8 12 16 20 VR, REVERSE VOLTAGE (V) VGS = -10 V SINGLE PULSE RθJA = 173 oC/W 10 TA = 25 oC 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Schottky Diode Reverse Current FDFMA2P853T Rev.B1 100 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 173 C/W 0.01 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction to Ambient Transient Thermal Response Curve FDFMA2P853T Rev.B1 6 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25 °C unless otherwise noted FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout FDFMA2P853T Rev.B1 7 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDFMA2P853T Rev.B1 www.fairchildsemi.com FDFMA2P853T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.