FDFS6N548 tm Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 7A, 23mΩ Features General Description Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A VF < 0.45V @ 2A VF < 0.28V @ 100mA This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Application Low Miller Charge DC/DC Conversion D C D C SO-8 S A Pin 1 G A A 1 8 C A 2 7 C S 3 6 D G 4 5 D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Units V ±20 V 7 30 Power Dissipation for Dual Operation PD Ratings 30 2 Power Dissipation for Single Operation (Note 1a) EAS Drain-Source Avalanche Energy VRRM Schotty Repetitive Peak Reverse Voltage (Note 3) IO Schotty Average Forward Current TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) 1.6 A W 12 mJ 20 V 2 A -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient RθJC Thermal Resistance, Junction to Case (Note 1a) 78 (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking FDFS6N548 Device FDFS6N548 ©2007 Fairchild Semiconductor Corporation FDFS6N548 Rev.B Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode January 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 22 VDS = 24V, VGS = 0V mV/°C 1 TJ = 125°C 250 VGS = ±20V, VDS = 0V µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5 VGS = 10V, ID = 7A 19 23 rDS(on) Drain to Source On-Resistance VGS = 4.5V, ID = 6A 23 30 VGS = 10V, ID = 7A, TJ = 125°C 26 31 VDS = 5V, ID = 7A 20 gFS Forward Transconductance 1.2 1.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 525 700 pF 100 133 pF 65 100 pF Ω 0.8 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 7A VGS = 10V, RGEN = 6Ω VDS = 15V, ID = 7A VGS = 10V 6 12 ns 2 10 ns 14 25 ns 2 10 ns 9 13 nC 1.5 nC 2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 7A (Note2) IF = 7A, di/dt = 100A/µs 0.90 1.25 V 23 35 ns 14 21 nC 250 µA Schottky Diode Characteristics VR IR Reverse Breakdown Voltage Reverse Leakage IR = 1mA VR = -10V IF = -100mA VF Forward Voltage IF = -2A FDFS6N548 Rev.B 2 30 TJ = 25°C V 39 TJ = 125°C 18 TJ = 25°C 225 TJ = 125°C 140 TJ = 25°C 364 TJ = 125°C 290 mA 280 450 mV www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimun pad 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 1mH, IAS = 5.0A, VDD = 27V, VGS = 10V. FDFS6N548 Rev.B 3 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Notes: VGS = 10V VGS = 4.5V 25 VGS = 3.5V 20 VGS = 4V 15 VGS = 3V 10 5 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 30 4 VGS = 3.5V 2.0 0.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On-Resistance vs Junction Temperature ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDD = 5V 20 15 TJ = 25oC 10 TJ = 150oC TJ = -55oC 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7A 15 20 25 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 50 40 TJ = 150oC 30 TJ = 25oC 20 10 2 60 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 VGS = 0V 10 1 TJ = 25oC TJ = 150oC 0.1 TJ = -55oC 0.01 0.001 0.0 4 Figure 5. Transfer Characteristics FDFS6N548 Rev.B 10 Figure 4. On-Resistance vs Gate to Source Voltage 30 0 5 60 1.0 5 0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.2 25 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT(A) ID = 7A VGS = 10V -50 VGS = 4.5V 1.0 1.6 0.6 -75 VGS = 4V 1.5 Figure 1. On Region Characteristics 1.4 VGS = 3V 2.5 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 1000 Ciss ID = 7A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 VDD = 10V VDD = 20V 4 2 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 Coss f = 1MHz VGS = 0V 40 0.1 10 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 8 7 6 5 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Figure 7. Gate Charge Characteristics 4 TJ 3 = 25oC TJ = 125oC 2 6 VGS = 10V 4 VGS = 4.5V 2 o RθJA = 78 C/W 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 0 10 20 P(PK), PEAK TRANSIENT POWER (W) 100us 0.1 1ms 10ms 0.01 0.1 SINGLE PULSE TJ = MAX RATED TA = 25oC 1 10 100ms 1s 10s DC 80 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDFS6N548 Rev.B 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 50 o 50 1 25 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss 100 300 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 100 CURRENT AS FOLLOWS: I = I25 150 – T A ----------------------125 TA = 25oC 10 SINGLE PULSE 1 0.5 -4 10 -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted IR , REVERSE LEAKAGE CURRENT (mA) IF , FORWARD LEAKAGE CURRENT (A) 30 10 1 TJ = 125oC 0.1 TJ = 25oC 0.01 0.001 0.0 0.4 0.8 1.2 1.6 VF , FORWARD VOLTAGE (V) 10 TJ = 125oC 1 0.1 0.01 TJ = 25oC 0.001 2.0 0 Figure 13. Schottky Diode Forward Characteristics 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 5 10 15 20 VR , REVERSE VOLTAGE (V) Figure 14. Schottky Diode Reverse Characteristics DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 3E-3 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve FDFS6N548 Rev.B 6 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDFS6N548 Rev. B 7 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS