NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B http://onsemi.com − Machine Model: C HIGH CURRENT SCHOTTKY BARRIER DIODE • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Reverse Voltage Peak Revese Voltage Symbol Value Unit VR 20 Vdc VRM 23 V 200 2.0 mW mW/°C Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Forward Current (DC) Continuous IF Forward Current t = 8.3 ms Half Sinewave IF Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg −55 to +150 °C A 1 A 5 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 CATHODE 2 ANODE MARKING DIAGRAM 2 1 RD MG G SOD−323 CASE 477 STYLE 1 RD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSR0320MW2T1 Package Shipping† SOD−323 3000/Tape & Reel NSR0320MW2T1G SOD−323 3000/Tape & Reel (Pb−Free) NSR0320MW2T3G SOD−323 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 1 Publication Order Number: NSR0320MW2T1/D M Rating NSR0320MW2T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT − 25 29 pF Reverse Leakage (VR = 15 V) IR − 10 50 mAdc Reverse Leakage (VR = 2.0 V @ 85° C) IR − 200 300 mA Reverse Leakage (VR = 15.0 V @ 85° C) IR − 450 1000 mA Forward Voltage (IF = 10 mAdc) VF − 0.24 0.27 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.30 0.35 Vdc Forward Voltage (IF = 900 mAdc) VF − 0.45 0.50 Vdc Characteristic 10000 100 IR, REVERSE CURRENT (mA) 150°C 150°C 10 85°C −55°C 1 0.0 25°C 0.1 −45°C 0.2 0.3 0.4 0.5 125°C 1000 85°C 100 10 25°C 1 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 140 120 CT, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 100 80 60 40 20 0 0 5 10 15 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 2 20 25 NSR0320MW2T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 NSR0320MW2T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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