MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • Controlled and Uniform Tuning Ratio • Pb−Free Package is Available 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 30 Vdc Peak Forward Current IF 200 mAdc Symbol Max Unit 200 1.57 mW mW/°C RqJA 635 °C/W TJ, Tstg 150 °C 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS 2 Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature PD 1 PLASTIC SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad MARKING DIAGRAM 4E M G G 4E = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMVL105GT1 SOD−323 3000 / Tape & Reel MMVL105GT1G SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Publication Order Number: MMVL105GT1/D MMVL105GT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − Vdc IR − − 50 nAdc Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Device Type MMVL105GT1 Q VR = 3.0 Vdc f = 50 MHz CR C3/C25 f = 1.0 MHz Min Max Typ Min Max 1.5 2.8 250 4.0 6.5 TYPICAL CHARACTERISTICS 20 1000 Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 f = 1.0 MHz TA = 25°C 4.0 VR = 3 Vdc TA = 25°C 100 2.0 0 0.3 0.5 1.0 2.0 3.0 10 5.0 10 20 30 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 18 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance http://onsemi.com 2 +100 +125 1000 MMVL105GT1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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