BAS70−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 70 VOLTS SCHOTTKY BARRIER DIODE Features • Extremely Fast Switching Speed • Low Forward Voltage • Pb−Free Package is Available ANODE 1 CATHODE 2 3 CATHODE/ANODE 3 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 70 Volts 1 2 SOT−23 (TO−236AB) CASE 318 THERMAL CHARACTERISTICS Characteristic Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol Max Unit 225 1.8 mW mW/°C −55 to +150 °C PF TJ, Tstg MARKING DIAGRAM CG M CG M = Specific Device Code = Date Code ORDERING INFORMATION Device BAS70−04LT1 BAS70−04LT1G Package Shipping† SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 6 1 Publication Order Number: BAS70−04LT1/D BAS70−04LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 70 — Volts Total Capacitance (VR = 0 V, f = 1.0 MHz) CT — 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR — — 0.1 10 µAdc Forward Voltage (IF = 1.0 mAdc) VF — 410 mVdc Forward Voltage (IF = 10 mAdc) VF — 750 mVdc Forward Voltage (IF = 15 mAdc) VF — 1.0 Vdc IR , REVERSE CURRENT (µA) 100 10 1.0 150°C 125 °C 0.1 0 0.1 0.3 0.4 0.5 0.6 125°C 1.0 85°C 0.1 25°C −55 °C 0.2 TA = 150°C 10 0.01 −40 °C 85°C 25°C 0.7 0.8 0.001 1.0 0.9 0 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 25 30 35 15 20 VR, REVERSE VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 45 50 50 BAS70−04LT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) PLASTIC PACKAGE CASE 318−08 ISSUE AI NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 BAS70−04LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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