RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA • Low Reverse Current 30 V SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA Symbol Max Unit PD 200 mW 1.57 mW/°C RJA 635 °C/W TJ, Tstg −55 to +125 °C 1 CATHODE 2 ANODE ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range 1 2 SOD−523 CASE 502 PLASTIC MARKING DIAGRAM 1. FR−5 Minimum Pad 5Md ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) IR − − 30.0 A Forward Voltage (IF = 200 mA) VF − − 0.50 Vdc 5M = Specific Device Code d = Date Code ORDERING INFORMATION Device Package Shipping† RB521S30T1 SOD−523 4 mm Pitch 3000/Tape & Reel RB521S30T5 SOD−523 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 2 1 Publication Order Number: RB521S30T1/D RB521S30T1 10m IF, FORWARD CURRENT (A) 1 TA = 125°C IR, REVERSE CURRENT (A) 100m TA = 75°C 10m 1m 100µ TA = 25°C 10µ 1m TA = 125°C 100 TA = 75°C 10 TA = 25°C 1 100n TA = −25°C 10n TA = −25°C 1µ 1n 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (V) 10 15 25 Figure 2. Reverse Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Characteristics CT, TOATAL CAPACITANCE (pF) 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Total Capacitance http://onsemi.com 2 25 30 30 RB521S30T1 PACKAGE DIMENSIONS SOD−523 PLASTIC PACKAGE CASE 502−01 ISSUE O −X− A −Y− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. B D 2 PL 0.08 (0.003) M T X Y DIM A B C D J K S C K J S −T− SEATING PLANE RECOMMENDED FOOTPRINT 1.4 0.0551 0.4 0.0157 0.4 0.0157 http://onsemi.com 3 MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM 0.047 0.032 0.024 0.012 0.0055 0.008 0.063 MAX 0.051 0.035 0.028 0.014 0.0079 0.010 0.067 RB521S30T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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