INTERSIL BUZ351

BUZ351
Semiconductor
Data Sheet
11.5A, 400V, 0.400 Ohm, N-Channel Power
MOSFET
October 1998
File Number 2266.1
Features
• 11.5A, 400V
[ /Title
This is an N-Channel enhancement mode silicon gate power
• rDS(ON) = 0.400Ω
(BUZ35 field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
1)
switching regulators, switching converters, motor drivers,
/Sub• Nanosecond Switching Speeds
relay drivers, and drivers for high power bipolar switching
transistors
requiring
high
speed
and
low
gate
drive
power.
ject
• Linear Transfer Characteristics
(11.5A, This type can be operated directly from integrated circuits.
• High Input Impedance
400V,
Formerly developmental type TA17434.
• Majority Carrier Device
0.400
Ordering Information
• Related Literature
Ohm,
- TB334 “Guidelines for Soldering Surface Mount
PACKAGE
BRAND
N-Chan- PART NUMBER
Components to PC Boards”
BUZ351
TO-218AC
BUZ351
nel
Power NOTE: When ordering, use the entire part number.
Symbol
MOSD
FET)
/Author
G
()
/KeyS
words
(Harris
Semiconduc- Packaging
JEDEC TO-218AC
tor, NChanSOURCE
nel
DRAIN
GATE
DRAIN (FLANGE)
Power
MOSFET,
TO220AB)
/Creator ()
/DOCIN
FO pdfmark
[ /PageMode
/Use-
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998