BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.400Ω (BUZ35 field effect transistor designed for applications such as • SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (11.5A, This type can be operated directly from integrated circuits. • High Input Impedance 400V, Formerly developmental type TA17434. • Majority Carrier Device 0.400 Ordering Information • Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards” BUZ351 TO-218AC BUZ351 nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging JEDEC TO-218AC tor, NChanSOURCE nel DRAIN GATE DRAIN (FLANGE) Power MOSFET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998