RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA09196. • rDS(ON) = 1.9Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER G PACKAGE BRAND S RFL1N12 TO-205AF RFL1N12 RFL1N15 TO-205AF RFL1N15 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 1444.2 RFL1N12, RFL1N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFL1N12 120 120 1 5 ±20 8.33 0.0667 -55 to 150 RFL1N15 150 150 1 5 ±20 8.33 0.0667 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFL1N12 120 - - V RFL1N15 150 - - V VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = 0.8 x Rated BVDSS , TC = 25oC TC = 125oC - - 1 µA - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA ID =1A, VGS =10V - - 1.9 V ID = 2A, VGS = 10V - - 6.3 V ID = 1A, VGS = 10V, (Figures 6, 7) - - 1.9 Ω Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current Drain to Source On Voltage (Note 2) IGSS VDS(ON) Drain to Source On Resistance (Note 2) rDS(ON) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Fall Time ID = 250µA, VGS = 0V gfs ID = 1A, VDS = 10V, (Figure 10) 400 - - S td(ON) ID ≈ 1A, VDD = 75V, RGS = 50Ω VGS = 10V, (Figures 11, 12, 13) - 17 25 ns - 30 45 ns td(OFF) - 30 45 ns tf - 30 50 ns - - 200 pF pF tr Turn-Off Delay Time TEST CONDITIONS Input Capacitance CISS Output Capacitance COSS - - 80 Reverse Transfer Capacitance CRSS - - 25 pF Thermal Resistance Junction to Case VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 15 oC/W MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 1A, dISD/dt = 50A/µs - 150 - ns RθJC Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS NOTE: 2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%. 5-2 RFL1N12, RFL1N15 Typical Performance Curves Unless Otherwise Specified 1.5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 1.0 0.5 0 0 25 50 75 100 125 0 25 150 50 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 4.0 10.00 OPERATION IN THIS AREA LIMITED BY rDS(ON) 250µA PULSE TEST 3.5 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 75 100 125 TC, CASE TEMPERATURE (oC) 1.00 0.10 3.0 2.5 VGS = 20V VGS = 10V VGS = 8V 2.0 VGS = 7V 1.5 VGS = 6V 1 VGS = 5V RFL1N12 RFL1N15 0.5 VGS = 4V 0.01 0 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1 1000 0 1 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 9 10 FIGURE 4. SATURATION CHARACTERISTICS 6 3.0 250µA PULSE TEST DUTY CYCLE 2% TC = 25oC rDS(ON) , DRAIN TO SOURCE ON RESISTANCE VDS = 12V 250µA PULSE TEST DUTY CYCLE 2% 2.5 ID , DRAIN CURRENT (A) 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) TC = -40oC 2.0 TC = 125oC 1.5 1.0 0.5 TC = 125oC 5 TC = 125oC 4 3 TC = 25oC 2 TC = -40oC 1 TC = -40oC 0 0 0 2 4 6 8 10 12 VGS , GATE TO SOURCE VOLTAGE (V) 0 14 0.5 1.0 1.5 2.0 2.5 3.0 ID , DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 3.5 RFL1N12, RFL1N15 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 VGS = 10V, ID = 1A VGS = VDS, ID = 250µA NORMALIZED GATE THRESHOLD VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 1.5 1.0 0.5 0 -50 0 50 100 1.2 1.0 0.8 0 -50 200 150 0 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 100 150 200 FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION TEMPERATURE 240 1200 gf , TRANSCONDUCTANCE (S) f = 1MHz 200 C, CAPACITANCE (pF) 50 TJ, JUNCTION TEMPERATURE (oC) 160 120 CISS 80 COSS 40 VDS = 10V 1000 80µs PULSE TEST TC = -40oC 800 TC = 25oC 600 TC = 125oC 400 200 CRSS 0 10 20 30 40 50 60 0 70 0 0.5 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 VDD = VDSS VDD = VDSS GATE TO SOURCE VOLTAGE RL = 75Ω IG(REF) = 0.095mA VGS = 10V VDS, VOLTS (V) 75 8 6 4 0.75VDSS 0.50VDSS 0.25VDSS 37.5 2.0 2 DRAIN TO SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) 2.5 3.0 FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT BVDSS 112.5 1.5 ID , DRAIN CURRENT (A) FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 150 1.0 VGS , VOLTS (V) 0 t, TIME (µs) 80 IG(REF) 0 IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 RFL1N12, RFL1N15 Test Circuits and Waveforms VDD tON tOFF tD(ON) RL tD(OFF) tF tR VDS VDS 90% 90% VGS 10% 10% 0V RGS 90% DUT VGS 10% FIGURE 12. RESISTIVE SWITCHING TEST CIRCUIT 50% 50% PULSE WIDTH FIGURE 13. RESISTIVE SWITCHING WAVEFORMS 5-5