BUZ45 Semiconductor Data Sheet 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2257.1 Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (BUZ45) power field effect transistor designed for applications such • SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 500V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.600 • High Input Impedance Ohm, N- Formerly developmental type TA17435. • Majority Carrier Device Channel Power Ordering Information Symbol PART NUMBER PACKAGE BRAND MOSD BUZ45 TO-204AA BUZ45 FET) /Author NOTE: When ordering, use the entire part number. G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-204AA Channel Power DRAIN MOS(FLANGE) FET. TO204AA) /Creator () SOURCE (PIN 2) /DOCIN GATE (PIN 1) FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998