ONSEMI NTD80N02-032

NTD80N02
Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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Features
• Pb−Free Packages are Available
Typical Applications
RDS(on) TYP
ID MAX
24 V
5.0 m
80 A
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
N−Channel
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
24
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
ID
Adc
Drain Current − Continuous @ TC = 25°C
Drain Current − Single Pulse (tp = 10 s)
IDM
80*
200
Total Power Dissipation @ TC = 25°C
PD
75
Watts
TJ, Tstg
−55 to
150
°C
EAS
733
mJ
RθJC
RθJA
RθJA
1.65
67
120
TL
260
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 24 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
S
4
4
4
°C/W
1 2
3
3
12
3
CASE 369C
CASE 369D
CASE 369AA
DPAK
DPAK
DPAK
(Surface Mount) (Surface Mount) (Straight Lead)
STYLE 2
STYLE 2
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
1 2
4
Drain
4
Drain
YWW
80
N02
Rating
YWW
80
N02
•
•
•
•
V(BR)DSS
1
Gate
2
Drain
3
Source
Y
WW
80N02
1
Gate
2
Drain
3
Source
= Year
= Work Week
= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
 Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4
1
Publication Order Number:
NTD80N02/D
NTD80N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
24
−
27
25
−
−
−
−
−
−
1.0
10
−
−
±100
1.0
−
1.9
−3.8
3.0
−
−
−
−
5.0
7.5
5.0
7.5
5.8
9.0
5.8
9.0
gFS
−
20
−
Mhos
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 Adc)
Positive Temperature Coefficient
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 24 Vdc)
(VGS = 0 Vdc, VDS = 24 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 Adc)
Negative Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 80 Adc)
(VGS = 4.5 Vdc, ID = 40 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3)
Vdc
mV/°C
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 Vdc,
VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
Ciss
−
2250
2600
Coss
−
900
1100
Crss
−
400
525
td(on)
−
17
30
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(VGS = 4.5
4 5 Vdc,
Vdc
VDD = 20 Vdc,
ID = 20 Adc,
RG = 2
2.5
5 Ω)
Rise Time
Turn−Off Delay Time
Fall Time
Gate
Charge
Ga
eC
a ge
(VGS = 4.5 Vdc,
ID = 20 Adc,
VDS = 20 Vdc) (Note 3)
tr
−
67
125
td(off)
−
28
45
tf
−
40
75
QT
−
30
42
Q1
−
7.0
12
Q2
−
18
28
−
−
−
0.92
1.05
0.70
1.2
−
−
trr
−
38
52
ta
−
20
−
tb
−
18
−
Qrr
−
0.038
−
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 40 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Reverse
e e se Recovery
eco e y Time
e
Ad VGS = 0 Vdc,
Vd
(IS = 20 Adc,
dIS/dt = 100 A/s) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
Vdc
nss
C
NTD80N02
100
ID, DRAIN CURRENT (AMPS)
4.4 V
4.6 V
8V
80
TJ = 25°C
4.2 V
4.8 V
5V
70
60
6.5 V
50
4V
5.2 V
6V
ID, DRAIN CURRENT (AMPS)
9V
90
3.8 V
3.6 V
40
30
3.4 V
20
3.2 V
10
VGS = 3.0 V
0
0.5
1
1.5
2
2.5
3.5
3
4
VDS ≥ 24 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.07
ID = 10 A
TJ = 25°C
0.06
0.05
0.04
0.03
0.02
0.01
0
0
2
4
6
8
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.015
TJ = 25°C
0.01
VGS = 4.5 V
VGS = 10 V
0.005
0
55
60
65
70
75
80
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.015
1000
VGS = 0 V
0.0125
0.01
0.0075
ID = 80 A
VDS = 10 V
0.005
0.0025
0
−50
−25
0
25
50
75
100
125
TJ = 125°C
100
ID = 80 A
VDS = 4.5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
0
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
150
TJ = 100°C
10
1
TJ = 25°C
0.1
0.01
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
20
VGS = 0 V
TJ = 25°C
4000
3000
Ciss
2000
Coss
1000
Crss
0
−8 −6 −4 −2 0 2 4
VGS VDS
6
8 10 12 14 16 18 20 22 24
10
28
QT
8
20
VGS
VD
6
16
Q1
4
Q2
12
8
2
ID = 1.0 A
TJ = 25°C
0
0
10
20
30
40
4
0
50
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
80
1000
IS, SOURCE CURRENT (AMPS)
VDD = 20 V
ID = 20 A
VGS = 10 V
t, TIME (ns)
24
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
5000
VGS, GATE−TO−SOURCE VOLTAGE (V)
NTD80N02
tr
100
tf
td(off)
td(on)
10
1
1
10
70
VGS = 0 V
TJ = 25°C
60
50
40
30
20
10
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
100
RG, GATE RESISTANCE (Ω)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
NTD80N02
ID , DRAIN CURRENT (AMPS)
100
100 s
di/dt
1 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
10
tb
10 ms
TIME
dc
0.25 IS
tp
IS
1
0.1
trr
ta
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
IS
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Diode Reverse Recovery Waveform
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
DUTY CYCLE
100
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
1
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RθJA(t)
0.01
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 13. Thermal Response − Various Duty Cycles
ORDERING INFORMATION
Order Number
NTD80N02
Package
Shipping†
DPAK−3
75 Units / Rail
NTD80N02G
DPAK−3
(Pb−Free)
75 Units / Rail
NTD80N02T4
DPAK−3
2500 / Tape & Reel
NTD80N02T4G
DPAK−3
(Pb−Free)
2500 / Tape & Reel
NTD80N02−001
DPAK−3 Straight Lead
75 Units / Rail
NTD80N02−1G
DPAK−3 Straight Lead
(Pb−Free)
75 Units / Rail
NTD80N02−032
DPAK−3 Straight Lead
(3.2 ± 0.5 mm)
75 Units / Rail
NTD80N02−032G
DPAK−3 Straight Lead
(3.2 ± 0.5 mm)
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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5
NTD80N02
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
J
L
R
S
U
V
Z
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.033 0.045
0.018 0.023
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.88
0.46
0.61
0.83
1.14
0.46
0.58
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD80N02
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD80N02
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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8
For additional information, please contact your
local Sales Representative.
NTD80N02/D