Transistors SMD Type Switching Transistor FMMT723 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation 0.4 3 Features 1 IC Up To 10A peak pulse current 0.55 IC CONT 2.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe Characteristics Up To 10A (pulsed) +0.05 0.1-0.01 +0.1 0.97-0.1 Extremely Low Saturation Voltage E.g. 10mV Typ. 0-0.1 +0.1 0.38-0.1 Exhibits extremely low equivalent on-resistance; RCE(sat) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak collector current ICM -2.5 A IB -500 mA Ptot 625 mW Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FMMT723 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -100 -200 Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -100 -160 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 -8.8 V V Collector cutoff current ICBO VCB=-80V Emitter cut-off current IEBO VEB=-4V -100 nA Collector Emitter Cut-Off Current ICES VCES=-80V -100 nA mV -100 nA Collector-emitter saturation voltage * IC=-0.1A, IB=-10mA VCE(sat) IC=-0.5A, IB=-50mA IC=-1A, IB=-150mA -50 -125 -210 -80 -200 -330 Base-emitter saturation voltage * VBE(sat) IC=-1A,IB=-150mA -0.89 -1.0 V Base-emitter voltage * VBE(ON) IC=-1A,VCE=-10V -0.71 -1.0 V Static Forward Current Transfer Ratio * hFE IC=-10mA, VCE=-10V 300 475 IC=-0.1A, VCE=-10V 300 450 IC=-0.5A, VCE=-10V 250 375 IC=-1A, VCE=-10V Current-gain-bandwidth product Output capacitance * Pulse test: tp = 300 ìs; d Marking Marking fT Cobo Switching times 2 Min 723 www.kexin.com.cn 0.02. 250 IC=-1.5A, VCE=-10V 30 IC=-50mA,VCE=-10V,f=100MHz 150 200 MHz VCB=-10V,f=1MHz 13 20 pF ton IC=-0.5A, VCC=-50V 50 ns toff IB1=IB2=-50mA 760 ns