ONSEMI NTTFS5811NLTAG

NTTFS5811NL
Power MOSFET
40 V, 53 A, 6.4 mΩ
Features
•
•
•
•
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb--Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
6.4 mΩ @ 10 V
40 V
Symbol
Value
Unit
VDSS
40
V
Gate--to--Source Voltage
VGS
±20
V
ID
17
A
Parameter
Continuous Drain
Current RθJA (Note 1)
TA = 25°C
TA = 100°C
Power Dissipation RθJA
(Note 1)
Continuous Drain
Current RθJC (Note 1)
TA = 25°C
Steady
State
Pulsed Drain Current
PD
L = 0.1 mH
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
S (1,2,3)
33
PD
MARKING DIAGRAM
W
33
13
IDM
211
A
TJ,
Tstg
--55 to
+150
°C
IS
53
A
EAS
65
mJ
Source Current (Body Diode)
Single Pulse Drain--to--Source
Avalanche Energy
G (4)
A
53
TC = 100°C
Operating Junction and Storage Temperature
D (5--8)
1.1
ID
TC = 25°C
tp = 10 ms
W
2.7
TA = 100°C
TC = 25°C
N--Channel MOSFET
10
TC = 100°C
Power Dissipation
RθJC (Note 1)
53 A
10 mΩ @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain--to--Source Voltage
ID MAX
IAS
36
A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
5811
A
Y
WW
G
5811
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS5811NLTAG
WDFN8
(Pb--Free)
1500 /
Tape & Reel
WDFN8
(Pb--Free)
5000 /
Tape & Reel
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
NTTFS5811NLTWG
Junction--to--Case – Steady
State (Note 1)
RθJC
3.8
°C/W
Junction--to--Ambient – Steady
State (Note 1)
RθJA
47
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Parameter
1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
© Semiconductor Components Industries, LLC, 2010
May, 2010 -- Rev. 1
1
Publication Order Number:
NTTFS5811NL/D
NTTFS5811NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain--to--Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
35
IDSS
Gate--to--Source Leakage Current
V
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain--to--Source On Resistance
RDS(on)
Forward Transconductance
1.5
1.7
2.2
--6
gFS
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 5 V, ID = 10 A
V
mV/°C
5.5
6.4
8.3
10
mΩ
24.6
S
1570
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
215
157
VGS = 10 V, VDS = 32 V, ID = 10 A
31
VGS = 4.5 V, VDS = 32 V, ID = 10 A
18
nC
nC
Threshold Gate Charge
QG(TH)
1
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
QGD
Plateau Voltage
VGP
3
V
Gate Resistance
RG
0.61
Ω
td(on)
11
ns
VGS = 4.5 V, VDS = 32 V, ID = 10 A
5
10
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDS = 32 V,
ID = 10 A, RG = 2.5 Ω
tf
30
21
12
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.74
TJ = 125°C
0.58
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
21
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
QRR
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2
V
ns
11
10
12
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTTFS5811NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
4.0 V
60
3.8 V
3.6 V
40
3.4 V
20
3.2 V
3.0 V
0
1
2
3
4
60
40
TJ = 25°C
20
TJ = --55°C
TJ = 125°C
1
2
3
4
5
VGS, GATE--TO--SOURCE VOLTAGE (V)
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
ID = 20 A
TJ = 25°C
0.014
0.012
0.010
0.008
0.006
0.004
2
4
6
8
10
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
0.016
0.010
TJ = 25°C
VGS = 4.5 V
0.008
0.006
VGS = 10 V
0.004
5
12
10
15
20
25
30
35
40
45
50
VGS, GATE--TO--SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
2
1.8
80
0
5
100,000
VGS = 0 V
ID = 20 A
VGS = 10 V
1.6
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
4.2 V
80
VDS ≥ 10 V
100
VGS = 5 V
0
RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED)
TJ = 25°C
4.6 V
100 10 V
10,000
1.4
1.2
1
TJ = 150°C
1,000
TJ = 125°C
0.8
0.6
100
--50
--25
0
25
50
75
100
125
150
5
15
25
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Voltage
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3
55
NTTFS5811NL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
2000
C, CAPACITANCE (pF)
1800
TJ = 25°C
Ciss
1600
1400
1200
1000
800
600
400
Coss
200
0
Crss
0
10
20
30
40
VGS, GATE--TO--SOURCE VOLTAGE (V)
2200
QT
8
6
4
Qgs
Qgd
VDS = 32 V
ID = 10 A
TJ = 25°C
2
0
0
5
10
15
20
25
30
DRAIN--TO--SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate--to--Source Voltage vs. Total
Charge
35
1000
IS, SOURCE CURRENT (A)
100
tr
td(off)
tf
10
1
td(on)
1
10
100
ID, DRAIN CURRENT (A)
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (Ω)
VSD, SOURCE--TO--DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 0 V
TJ = 25°C
50
VGS = 10 V
Single Pulse
TC = 25°C
10 ms
100 ms
10
1 ms
1
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.1
0.1
1
10
EAS, SINGLE PULSE DRAIN--TO-SOURCE AVALANCHE ENERGY (mJ)
t, TIME (ns)
VDD = 32 V
ID = 10 A
VGS = 4.5 V
100
60
50
40
30
20
10
0
25
50
75
100
125
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
1.1
150
NTTFS5811NL
TYPICAL CHARACTERISTICS
RθJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
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5
1
10
100
1000
NTTFS5811NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB--01
ISSUE B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
1 2 3 4
θ
c
TOP VIEW
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
θ
A1
0.10 C
A
0.10 C
e
SIDE VIEW
0.10
8X b
C A B
0.05
c
L
C
6X
DETAIL A
SEATING
PLANE
DETAIL A
INCHES
NOM
0.030
-----0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.026 BSC
0.012
0.016
0.025
-----0.012
0.017
0.002
0.005
0.055
0.059
0_
-----MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
-----0.022
0.008
0.063
12 _
SOLDERING FOOTPRINT*
8X
0.42
e/2
1
4
E2
0.65
PITCH
PACKAGE
OUTLINE
K
4X
0.66
M
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
-----0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.65 BSC
0.30
0.41
0.51
0.64
----------0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
-----12 _
5
D2
L1
3.60
BOTTOM VIEW
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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NTTFS5811NL/D