ONSEMI NTMD5838NLR2G

NTMD5838NL
Power MOSFET
40 V, 8.9 A, 25 mW, Dual N−Channel SO−8
Features
•
•
•
•
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
7.4
A
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
TA = 25°C
Steady
State
TA = 70°C
TA = 25°C
t ≤10 s
PD
Pulsed Drain
Current
ID
PD
°C
IS
7.0
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS
20
mJ
IAS
21
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Ambient Steady State
(Notes 1 & 3)
RqJA
58
Junction−to−Ambient − t ≤10 s (Note 1)
RqJA
40
Junction−to−Ambient Steady State (Note 2)
RqJA
106
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1.9
−55 to
+150
Unit
D1 D1 D2 D2
8
SO−8
CASE 751
STYLE 11
°C/W
1
D5838N
AYWW
G
1
S1 G1 S2 G2
(Top View)
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: TJ = 2 W * 58°C/W + 25°C = 141°C
April, 2011 − Rev. 0
G
W
3.0
TJ, TSTG
© Semiconductor Components Industries, LLC, 2011
D
S
A
Parameter
D
G
35
Source Current (Body Diode)
N−CHANNEL MOSFET
A
8.9
IDM
Operating Junction and Storage
Temperature
8.9 A
30.8 mW @ 4.5 V
7.1
TA = 70°C
tp = 10 ms
25 mW @ 10 V
40 V
W
2.1
1.3
TA = 70°C
TA = 25°C
ID MAX
5.9
TA = 70°C
TA = 25°C
RDS(ON) MAX
NTMD5838NLR2G
Package
Shipping†
SO−8
2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD5838NL/D
NTMD5838NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
32
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
1.0
1.8
3.0
6.0
RDS(on)
gFS
V
mV/°C
VGS = 10 V, ID = 7 A
20.5
25
VGS = 4.5 V, ID = 7 A
25.0
30.8
VDS = 15 V, ID = 7 A
4.0
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
785
VGS = 0 V, f = 1 MHz, VDS = 20 V
123
pF
90
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 7 A
17
8.6
11
Threshold Gate Charge
QG(TH)
0.8
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.0
Plateau Voltage
VGP
3.2
V
Gate Resistance
RG
1.8
W
td(ON)
11
VGS = 4.5 V, VDS = 20 V; ID = 7 A
nC
2.8
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 7 A, RG = 2.5 W
tf
23
ns
17
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 7 A
TJ = 25°C
0.84
TJ = 125°C
0.7
tRR
ta
tb
1.2
V
17
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 7 A
QRR
11
6.0
10
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTMD5838NL
TYPICAL PERFORMANCE CURVES
50
50
ID, DRAIN CURRENT (A)
40
4.4 V
7.5 V
4V
30
3.6 V
20
VDS ≥ 5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
5.5 V
10 V
10
40
30
20
TJ = 125°C
10
TJ = 25°C
TJ = −55°C
3V
0
0
1
2
3
4
0
5
2
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 7 A
0.04
0.03
0.02
0.01
2
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
TJ = 25°C
VGS = 10 V
0.015
0.005
2
6
10
14
18
ID, DRAIN CURRENT (A)
100000
VGS = 4.5 V
ID = 7 A
VGS = 0 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = 4.5 V
0.025
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.2
1
0.8
0.6
−50
5
0.035
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.4
4
Figure 2. Transfer Characteristics
0.06
0.05
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−25
0
25
50
75
100
125
150
10000
TJ = 150°C
TJ = 125°C
1000
100
5
15
25
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMD5838NL
TYPICAL PERFORMANCE CURVES
1200
6
Ciss
800
600
400
200
0
Coss
QT
4
QGD
QGS
2
VGS = 10 V
ID = 7 A
TJ = 25°C
Crss
0
10
20
30
0
40
VDS, DRAIN−TO−SOURCE (V)
C, CAPACITANCE (pF)
1000
VGS, GATE−TO−SOURCE (V)
TJ = 25°C
VGS = 0 V
0
1
2
3
4
5
6
7
8
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
10
1000
12
IS, SOURCE CURRENT (A)
VDS = 20 V
ID = 7 A
VGS = 4.5 V
t, TIME (ns)
100
td(on)
tr
td(off)
10
tf
1
1
10
RG, GATE RESISTANCE (W)
100
VGS = 0 V
TJ = 25°C
10
8
6
4
2
0
0.2
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1 ms
0.1
10 ms
0.01
0.001
100 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
Figure 10. Diode Forward Voltage vs. Current
100
1
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
20
ID = 20 A
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTMD5838NL
TYPICAL PERFORMANCE CURVES
100
D = 0.5
R(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 13. Thermal Response
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5
1
10
100
1000
NTMD5838NL
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
Y
M
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMD5838NL/D