NTMD5838NL Power MOSFET 40 V, 8.9 A, 25 mW, Dual N−Channel SO−8 Features • • • • Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 7.4 A Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) TA = 25°C Steady State TA = 70°C TA = 25°C t ≤10 s PD Pulsed Drain Current ID PD °C IS 7.0 A Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH) EAS 20 mJ IAS 21 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Ambient Steady State (Notes 1 & 3) RqJA 58 Junction−to−Ambient − t ≤10 s (Note 1) RqJA 40 Junction−to−Ambient Steady State (Note 2) RqJA 106 S MARKING DIAGRAM/ PIN ASSIGNMENT 1.9 −55 to +150 Unit D1 D1 D2 D2 8 SO−8 CASE 751 STYLE 11 °C/W 1 D5838N AYWW G 1 S1 G1 S2 G2 (Top View) A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 1. Surface−mounted on FR4 board using 1 sq−in pad (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size. 3. Both channels receive equivalent power dissipation 1 W applied on each channel: TJ = 2 W * 58°C/W + 25°C = 141°C April, 2011 − Rev. 0 G W 3.0 TJ, TSTG © Semiconductor Components Industries, LLC, 2011 D S A Parameter D G 35 Source Current (Body Diode) N−CHANNEL MOSFET A 8.9 IDM Operating Junction and Storage Temperature 8.9 A 30.8 mW @ 4.5 V 7.1 TA = 70°C tp = 10 ms 25 mW @ 10 V 40 V W 2.1 1.3 TA = 70°C TA = 25°C ID MAX 5.9 TA = 70°C TA = 25°C RDS(ON) MAX NTMD5838NLR2G Package Shipping† SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMD5838NL/D NTMD5838NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 32 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance 1.0 1.8 3.0 6.0 RDS(on) gFS V mV/°C VGS = 10 V, ID = 7 A 20.5 25 VGS = 4.5 V, ID = 7 A 25.0 30.8 VDS = 15 V, ID = 7 A 4.0 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge 785 VGS = 0 V, f = 1 MHz, VDS = 20 V 123 pF 90 QG(TOT) VGS = 10 V, VDS = 20 V; ID = 7 A 17 8.6 11 Threshold Gate Charge QG(TH) 0.8 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 4.0 Plateau Voltage VGP 3.2 V Gate Resistance RG 1.8 W td(ON) 11 VGS = 4.5 V, VDS = 20 V; ID = 7 A nC 2.8 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 7 A, RG = 2.5 W tf 23 ns 17 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 7 A TJ = 25°C 0.84 TJ = 125°C 0.7 tRR ta tb 1.2 V 17 VGS = 0 V, dIS/dt = 100 A/ms, IS = 7 A QRR 11 6.0 10 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTMD5838NL TYPICAL PERFORMANCE CURVES 50 50 ID, DRAIN CURRENT (A) 40 4.4 V 7.5 V 4V 30 3.6 V 20 VDS ≥ 5 V TJ = 25°C ID, DRAIN CURRENT (A) 5.5 V 10 V 10 40 30 20 TJ = 125°C 10 TJ = 25°C TJ = −55°C 3V 0 0 1 2 3 4 0 5 2 Figure 1. On−Region Characteristics TJ = 25°C ID = 7 A 0.04 0.03 0.02 0.01 2 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 TJ = 25°C VGS = 10 V 0.015 0.005 2 6 10 14 18 ID, DRAIN CURRENT (A) 100000 VGS = 4.5 V ID = 7 A VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 4.5 V 0.025 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.2 1 0.8 0.6 −50 5 0.035 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.4 4 Figure 2. Transfer Characteristics 0.06 0.05 3 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) −25 0 25 50 75 100 125 150 10000 TJ = 150°C TJ = 125°C 1000 100 5 15 25 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTMD5838NL TYPICAL PERFORMANCE CURVES 1200 6 Ciss 800 600 400 200 0 Coss QT 4 QGD QGS 2 VGS = 10 V ID = 7 A TJ = 25°C Crss 0 10 20 30 0 40 VDS, DRAIN−TO−SOURCE (V) C, CAPACITANCE (pF) 1000 VGS, GATE−TO−SOURCE (V) TJ = 25°C VGS = 0 V 0 1 2 3 4 5 6 7 8 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 10 1000 12 IS, SOURCE CURRENT (A) VDS = 20 V ID = 7 A VGS = 4.5 V t, TIME (ns) 100 td(on) tr td(off) 10 tf 1 1 10 RG, GATE RESISTANCE (W) 100 VGS = 0 V TJ = 25°C 10 8 6 4 2 0 0.2 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 ms 0.1 10 ms 0.01 0.001 100 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 10 VGS = 10 V SINGLE PULSE TC = 25°C 1 Figure 10. Diode Forward Voltage vs. Current 100 1 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 20 ID = 20 A 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMD5838NL TYPICAL PERFORMANCE CURVES 100 D = 0.5 R(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.01 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTMD5838NL PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) Y M M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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