ONSEMI BSS138LT3

BSS138LT1
Preferred Device
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
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200 mA, 50 V
RDS(on) = 3.5 W
Features
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
•
•
N−Channel
3
Low Voltage Applications
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Packages are Available
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
200
800
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to 150
°C
RqJA
556
°C/W
TL
260
°C
Rating
Thermal Resistance,
Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
mA
2
MARKING
DIAGRAM
3
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
J1 M G
G
SOT−23
CASE 318
STYLE 21
1
J1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping†
Device
Package
BSS138LT1
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
SOT−23
10,000 Tape & Reel
SOT−23
(Pb−Free)
10,000 Tape & Reel
BSS138LT1G
BSS138LT3
BSS138LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
February, 2009 − Rev. 5
1
Publication Order Number:
BSS138LT1/D
BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
−
−
Vdc
−
−
−
−
0.1
0.5
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±0.1
mAdc
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
−
1.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
gfs
100
−
−
mmhos
pF
mAdc
ON CHARACTERISTICS (Note 1)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
−
40
50
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
−
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
−
3.5
5.0
td(on)
−
−
20
td(off)
−
−
20
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
ns
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.9
VGS = 3.5 V
TJ = 25°C
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
0.7
- 55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0
3
2
4
5
6
7
9
8
10
0
1.5
2
2.5
3.5
3
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
2.2
1.25
ID = 1.0 mA
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.8
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
-55
-5
45
95
0.75
-55
145
-30
-5
20
45
70
95
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
145
1.0E-5
10
VDS = 40 V
TJ = 25°C
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
25°C
8
6
4
ID = 200 mA
2
1.0E-6
150°C
125°C
1.0E-7
1.0E-8
1.0E-9
0
0
500
1000
1500
2000
2500
0
3000
5
10
15
20
25
30
35
40
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
Figure 6. IDSS
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3
45
50
BSS138LT1
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
-55°C
3
2
1
0
0.1
0.05
0.2
0.15
0.25
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
VGS = 2.75 V
7
150°C
6
5
4
25°C
3
2
-55°C
1
0
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
VGS = 4.5 V
150°C
5
4.5
4
3.5
3
25°C
2.5
2
-55°C
1.5
1
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
0.5
4.5
VGS = 10 V
150°C
4
3.5
3
2.5
25°C
2
-55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 10. On−Resistance versus Drain
Current
Figure 9. On−Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.25
Figure 8. On−Resistance versus Drain Current
6
0
0.2
0.15
ID, DRAIN CURRENT (AMPS)
Figure 7. On−Resistance versus Drain Current
5.5
0.1
0.05
ID, DRAIN CURRENT (AMPS)
120
100
TJ = 150°C
0.1
25°C
-55°C
80
60
Ciss
0.01
40
Coss
20
0.001
Crss
0
0.2
0.4
0.6
0.8
1.0
0
1.2
0
5
10
15
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
Figure 12. Capacitance
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4
20
25
BSS138LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 81−3−5773−3850
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5
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For additional information, please contact your local
Sales Representative
BSS138LT1/D