ONSEMI NTD5803NT4G

NTD5803N
Power MOSFET
40 V, 76 A, Single N−Channel, DPAK
Features
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
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•
•
•
•
RDS(on) MAX
ID MAX
10.1 mW @ 5.0 V
54 A
7.2 mW @ 10 V
76 A
V(BR)DSS
Applications
40 V
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
"30
V
ID
76
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Steady
State
Pulsed Drain Current
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
4
4
54
PD
83
W
IDM
228
A
TJ, Tstg
−55 to
175
°C
1 2
3
1
DPAK
CASE 369C
(Surface Mount)
STYLE 2
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
IS
76
A
EAS
240
mJ
MARKING DIAGRAMS
& PIN ASSIGNMENT
TL
260
°C
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
S
N−CHANNEL MOSFET
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
64
2
1 Drain 3
Gate Source
Y
WW
5803N
G
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
4
Drain
YWW
58
03NG
Continuous Drain
Current (RqJC)
(Note 1)
G
YWW
58
03NG
Parameter
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
1
Publication Order Number:
NTD5803N/D
NTD5803N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
40
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.5
−7.4
gFS
mV/°C
VGS = 10 V, ID = 50 A
4.9
7.2
mW
VGS = 5.0 V, ID = 30 A
6.7
10.1
VDS = 15 V, ID = 15 A
13.6
S
3220
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
390
270
nC
51
VGS = 10 V, VDS = 20 V,
ID = 50 A
3.8
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
12.7
12.7
td(on)
12.6
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 32 V,
ID = 50 A, RG = 2.0 W
tf
ns
21.4
28.3
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.88
TJ = 150°C
0.73
tRR
ta
tb
1.2
27.2
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
V
ns
14
13.2
17
nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NTD5803NG
NTD5803NT4G
Package
Shipping†
DPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5803N
TYPICAL CHARACTERISTICS
140
100
4.5 V
80
60
4.2 V
40
4.0 V
0
3.8 V
3.4 V
0
1
2
3
4
5
6
75
TJ = 25°C
50
TJ = 150°C
25
TJ = −55°C
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10 V
0.010
0.008
0.006
TJ = 25°C
0.004
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.012
0.002
125
0
20
30
40
50
60
ID, DRAIN CURRENT (A)
70
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
TJ = 25°C
VGS = 5 V
VGS = 10 V
30
Figure 3. On−Resistance vs. Drain Current
10,000
ID = 50 A
1.6
VGS = 10 V
70
90
110
130
150
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7
50
ID, DRAIN CURRENT (A)
VGS = 0 V
TJ = 150°C
1000
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
120
20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
150
VGS = 5 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TJ = 25°C
10 V
ID, DRAIN CURRENT (A)
160
1.4
1.3
1.2
1.1
1.0
100
TJ = 25°C
10
0.9
0.8
0.7
−55 −35 −15
5
25
45
65
1
85 105 125 145 165
2
6
10
14
18
22
26
30
34
38
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTD5803N
VGS = 0 V
7000
TJ = 25°C
15
Ciss
4000
3000
2000
0
Coss
Crss
1000
10 5
Vgs
0
5
10
Vds
15
20
25
30
35
ID = 50 A
TJ = 25°C
12
6000
5000
VGS, GATE−TO−SOURCE VOLTAGE (V)
8000
40
9
6
18
VGS
VDS
Qgs
12
Qgd
3
0
6
0
5
10
15
20
25
30
35
40
45
50
0
55
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
50
IS, SOURCE CURRENT (A)
VGS = 0 V
VDD = 32 V
ID = 50 A
VGS = 10 V
t, TIME (ns)
24
QT
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
td(on)
tr
td(off)
100
tf
10
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
1
10
40
TJ = 25°C
30
20
10
0
100
0.4
0.6
0.8
1.0
1.2
1.4
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTD5803N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD5803N
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD5803N/D