ONSEMI NTD5802N

NTD5802N
Power MOSFET
40 V, Single N−Channel, 101 A DPAK
Features
•
•
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
MSL 1/260°C
AEC Q101 Qualified
100% Avalanche Tested
These are Pb−Free Devices
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RDS(on)
ID
4.4 mW @ 10 V
101 A
7.8 mW @ 5.0 V
50 A
V(BR)DSS
40 V
Applications
D
• CPU Power Delivery
• DC−DC Converters
• Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20
V
ID
101
A
Continuous Drain Current (RqJC) (Note 1)
TC = 25°C
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
93.75
W
TA = 25°C
ID
16.4
A
Continuous Drain Current (RqJA) (Note 1)
TC = 85°C
Steady
State
Pulsed Drain Current
tp=10ms
Current Limited by Package
PD
2.5
W
TA = 25°C
IDM
300
A
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
−55 to
175
°C
IS
50
A
Source Current (Body Diode)
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
EAS
240
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1 2
TL
260
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
12.7
TA = 25°C
Operating Junction and Storage Temperature
4
78
TA = 85°C
Power Dissipation
(RqJA) (Note 1)
S
YWW
58
02NG
Parameter
N−Channel
G
Y
WW
5802N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 4
1
Publication Order Number:
NTD5802N/D
NTD5802N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
1.6
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
60
Junction−to−Ambient − Steady State (Note 2)
RqJA
105
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
40
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
50
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
3.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.5
−7.4
mV/°C
VGS = 10 V, ID = 50 A
3.6
4.4
mW
VGS = 5.0 V, ID = 50 A
6.5
7.8
VDS = 15 V, ID = 15 A
16.8
S
5300
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
850
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
5025
550
580
Crss
400
Total Gate Charge
QG(TOT)
75
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
15
td(on)
14
tr
52
VGS = 10 V, VDS = 15 V,
ID = 50 A
pF
100
nC
6.0
18
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.0 W
tf
39
8.5
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD5802N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.9
1.2
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.8
1.0
tRR
ta
tb
25
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
QRR
15
10
15
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3
ns
nC
NTD5802N
10 V
180
VDS ≥ 10 V
VGS = 5 V
7V
160
ID, DRAIN CURRENT (A)
200
6V
140
ID, DRAIN CURRENT (A)
200
TJ = 25°C
4.5 V
120
100
4.2 V
80
60
4V
40
3.8 V
3.6 V
20
0
0
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
150
100
50
0
6
TJ = 25°C
TJ = 100°C
TJ = −55°C
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.010
VGS = 10 V
0.008
TJ = 150°C
0.006
TJ = 25°C
0.004
TJ = −55°C
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
0.002
10
30
50
70
90
110 130
150
170 190
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
TJ = 25°C
VGS = 5 V
VGS = 10 V
30
50
70
90
110
130
150
170
190
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
ID = 50 A
VGS = 10 V
IDSS, LEAKAGE (nA)
1.5
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
Figure 3. On−Resistance vs. Drain Current
1.7
1.6
6
1.4
1.3
1.2
1.1
1
TJ = 150°C
10000
1000
TJ = 100°C
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
100
175
2
6
10
14
18
22
26
30
34
38
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
VGS = 0 V
TJ = 25°C
6000
5000
4000
3000
2000
Coss
1000
Crss
0
10 5
0
5
10 15 20 25 30 35
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Ciss
7000
C, CAPACITANCE (pF)
30
15
8000
ID = 50 A
TJ = 25°C
12
40
9
6
6
3
0
0
20
40
60
0
80
Qg, TOTAL GATE CHARGE (nC)
60
VDD = 20 V
ID = 50 A
VGS = 10 V
td(off)
tr
tf
td(on)
10
1
10
IS, SOURCE CURRENT (A)
t, TIME (ns)
12
QDS
QGS
18
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1
VGS
VDS
Figure 7. Capacitance Variation
1000
24
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
NTD5802N
VGS = 0 V
TJ = 25°C
50
40
30
20
10
100
0
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.4
ORDERING INFORMATION
Order Number
NTD5802NT4G
Package
Shipping†
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD5802N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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NTD5802N/D