BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G Dual Switching Diode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements Pb−Free Packages are Available 6 1 4 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current Pulse Width = 10 ms THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW mW/°C Thermal Resistance Junction-to-Ambient RqJA 350 (Note 1) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature 54 1 2 3 SOT−563 CASE 463A PLASTIC MARKING DIAGRAM Derate above 25°C Total Device Dissipation 6 mW/°C RqJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad A6 MG G A6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BAS16DXV6T1 SOT−563 4000 / Tape & Reel BAS16DXV6T1G SOT−563 (Pb−Free) 4000 / Tape & Reel BAS16DXV6T5 SOT−563 8000 / Tape & Reel BAS16DXV6T5G SOT−563 (Pb−Free) 8000 / Tape & Reel SBAS16DXV6T1G SOT−563 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 3 1 Publication Order Number: BAS16DXV6/D BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − − − 715 855 1000 1250 − − − 1.0 50 30 CD − 2.0 pF trr − 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) QS − 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) http://onsemi.com 2 Unit mV mA BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G 1 ns MAX DUT 500 W t trr 10% tif 50 W DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R . 10 MW C 3 7 pF 500 W VC DUT BAW62 VCM 20 ns MAX D1 t 10% 243 pF 100 KW Qa VCM + C DUTY CYCLE = 2% t 90% Vf 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 450 W 1 KW V 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3 50 W BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G 10 100 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) TA = 150°C 10 TA = 85°C TA = 25°C 1.0 TA = -40°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 4 10 100 1000 BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 e 2 A 4 E −Y− 3 b L DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 10: PIN 1. CATHODE 1 2. N/C 3. CATHODE 2 4. ANODE 2 5. N/C 6. ANODE 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS16DXV6/D