MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150°C) ULTRAFAST RECTIFIERS 2 AMPERES 200 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • • 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2D Pb−Free Package is Available U2D SMB CASE 403A U2D = Specific Device Code ORDERING INFORMATION MAXIMUM RATINGS Rating Device Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current IF(AV) 2.0 @ TL = 145°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 A Operating Junction Temperature Range TJ −65 to +175 °C MURS220T3 MURS220T3G Package Shipping† SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2004 November, 2004 − Rev. 2 1 Publication Order Number: MURS220T3/D MURS220T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead (TL = 25°C) Symbol Value Unit RθJL 13 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/s) (IF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr Volts 0.95 0.77 A 2.0 50 ns 35 25 25 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 10 10 7.0 7.0 5.0 5.0 175°C 3.0 3.0 TC = 175°C 2.0 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 100°C TC = 25°C 1.0 0.7 0.5 0.3 0.2 0.1 2.0 TC = 100°C 1.0 TC = 25°C 0.7 0.5 0.3 0.2 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 1.2 1.3 100 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175°C TJ = 175°C IR, REVERSE CURRENT ( A) IR, REVERSE CURRENT ( A) MURS220T3 10 TJ = 100°C TJ = 100°C 1.0 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 25°C TJ = 25°C 0.1 0.01 0 40 20 60 100 80 120 140 160 180 200 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current 180 200 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 50 45 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF 35 30 25 20 15 10 5.0 0 0 10 20 30 40 50 60 70 80 90 100 RATED VOLTAGE APPLIED RJL = 13°C/W TJ = 175°C 8.0 7.0 6.0 5.0 4.0 dc 3.0 2.0 SQUARE WAVE 1.0 0 80 90 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case PF(AV) , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 40 10 9.0 5.0 TJ = 175°C 4.0 3.0 2.0 dc SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation http://onsemi.com 3 2.5 170 180 MURS220T3 PACKAGE DIMENSIONS SMB DO−214AA CASE 403A−03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. S A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 C K P H J SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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