MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features •Compact Package with J-Bend Leads Ideal for Automated Handling •Highly Stable Oxide Passivated Junction •Guard-Ring for Overvoltage Protection •Low Forward Voltage Drop •This is a Pb-Free Device http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS SMB CASE 403A PLASTIC Mechanical Characteristics •Case: Molded Epoxy •Epoxy Meets UL 94 V-0 @ 0.125 in •Weight: 95 mg (Approximately) •Cathode Polarity Band •Lead and Mounting Surface Temperature for Soldering Purposes: MARKING DIAGRAM AYWW B210G G 260°C Max. for 10 Seconds •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •ESD Ratings: Machine Model = B, Human Body Model = 3B •Device Meets MSL1 Requirements MAXIMUM RATINGS Rating B210 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 A Device Package Shipping† Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 130 A MBRS2H100T3G SMB (Pb-Free) 2500 / Tape & Reel Storage Temperature Range Tstg -65 to +175 °C Operating Junction Temperature (Note 1) TJ -65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2007 June, 2007 - Rev. 2 1 Publication Order Number: MBRS2H100/D MBRS2H100T3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 3) Symbol Value Unit RqJL RqJA 14 71 °C/W ELECTRICAL CHARACTERISTICS Value Characteristic Symbol TJ = 25°C TJ = 125°C Unit vF 0.79 0.65 V IR 0.008 1.5 mA Maximum Instantaneous Forward Voltage (Note 4) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 4) (VR = 100 V) 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 100 150°C IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 25°C 125°C 10 1 125°C 150°C 25°C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.3 1.2 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 10 150°C IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 10 1 125°C 0.1 0.01 0.001 25°C 0.0001 0.00001 150°C 1 125°C 0.1 0.01 25°C 0.001 0 10 20 30 40 50 60 70 80 90 100 0 VR, REVERSE VOLTAGE (V) 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 2 90 100 MBRS2H100T3G TYPICAL CHARACTERISTICS 4.0 450 IF(AV), AVERAGE FORWARD CURRENT (A) C, CAPACITANCE (pF) 400 TJ = 25°C f = 1 MHz 350 300 250 200 150 100 dc 3.0 Square Wave 2.0 1.0 50 0 0 10 20 30 40 50 60 70 90 80 100 100 105 110 115 120 125 130 TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating - Lead 4.0 RJA = 71°C/W 3.0 RJA = 100°C/W NO HEATSINK dc 2.0 Square Wave 1.0 dc 0 0 25 50 75 100 125 150 5 TJ = 150°C 4 Square Wave 3 dc 2 1 0 0 1 3 4 5 Figure 8. Maximum Forward Power Dissipation Figure 7. Current Derating, Ambient, Per Leg R(t) (C/W) 2 IF(AV), AVERAGE FORWARD CURRENT (A) TA, AMBIENT TEMPERATURE (°C) 100 135 140 145 150 VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 0 50% (DUTY CYCLE) 10 20% 10% 1.0 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction-to-Case http://onsemi.com 3 10 100 1000 MBRS2H100T3G PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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