PN4209 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN4209 is a PNP Silicon Transistor designed for high speed switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=8.0V ICES VCE=8.0V, TA=125°C BVCBO IC=100μA 15 15 UNITS V 15 V 4.5 V 200 mA 625 mW -65 to +150 °C 200 °C/W MAX 10 UNITS nA 5.0 μA V BVCES IC=100μA BVCEO BVEBO VCE(SAT) 0.15 V VCE(SAT) IC=1.0mA, IB=100μA IC=10mA, IB=1.0mA 0.18 V VCE(SAT) IC=50mA, IB=5.0mA 0.60 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.86 V 1.5 V VBE(SAT) hFE 15 V IC=3.0mA 15 V IE=100μA 4.5 0.69 VCE=0.5V, IC=1.0mA VCE=0.3V, IC=10mA VCE=0.3V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA 35 VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0 850 Cob Cib VBE=0.5V, IC=0 hFE hFE hFE fT 50 V 120 20 40 MHz 7.0 pF 7.0 pF R0 (1-December 2011) PN4209 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ton VCC=1.5V, IC=10mA, IB1=1.0mA 20 toff VCC=1.5V, IC=10mA, IB1=IB2=1.0mA 20 UNITS ns ns TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (1-December 2011) w w w. c e n t r a l s e m i . c o m