Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Marking Code is 702. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID ID IS IDM ISM PD 60 60 40 115 75 115 800 800 350 TJ,Tstg ΘJA -55 to +150 357 UNITS V V V mA mA mA mA mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL IGSSF IGSSR IDSS IDSS ID(ON) BVDSS VGS(th) VDS(ON) VDS(ON) rDS(ON) TEST CONDITIONS VGS=20V VGS=-20V VDS=60V, VGS=0 VDS=60V, VGS=0, TA=125oC VDS ≥ 2VDS(ON), VGS=10V ID=10µA VDS=VGS, ID=250µA VGS=10V, ID=500mA VGS=5.0V, ID=50mA VGS=10V, ID=500mA MIN TYP 500 60 1.0 105 2.1 3.7 56 MAX 100 -100 1.0 500 2.5 3.75 1.5 7.5 UNITS nA nA µA µA mA V V V V Ω SYMBOL rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton toff VSD TEST CONDITIONS MIN VGS=10V, ID=500mA, TA=100oC VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TA=100oC VDS ≥ 2VDS(ON), ID=200mA 80 VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, ID=10V, RG=25Ω, RL=25Ω VDD=30V, ID=10V, RG=25Ω, RL=25Ω VGS=0V, IS=11.5mA TYP 6.2 MAX 13.5 7.5 13.5 5.0 50 25 20 20 -1.5 UNITS Ω Ω Ω mmhos pF pF pF ns ns V All dimensions in inches (mm). LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN R2 R1 57