SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI • Pin compatible with DrMOS 6 x 6 version 3.0 • Tri-state PWM input function prevents negative output voltage swing • 5 V logic levels on PWM • MOSFET threshold voltage optimized for 5 V driver bias supply • Automatic skip mode operation (SMOD) for light load efficiency • Under-voltage lockout • Built-in bootstrap schottky diode • Adaptive deadtime and shoot through protection • Thermal shutdown warning flag • Low profile, thermally enhanced PowerPAK® MLP 6 x 6 40 pin package • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC DESCRIPTION The SiC762CD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC762CD delivers up to 35 A continuous output current and operates from an input voltage range of 3 V to 27 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 24 V. The device can also deliver very high power at 5 V output for ASIC applications. The SiC762CD incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high side and low side MOSFET gate drive signals. The driver IC is designed to implement the skip mode (SMOD) function for light load efficiency improvement. Adaptive dead time control also works to improve efficiency at all load points. The SiC762CD has a thermal warning (THDN) that alerts the system of excessive junction temperature. The driver IC includes an enable pin, UVLO and shoot through protection. The SiC762CD is optimized for high frequency buck applications. Operating frequencies in excess of 1 MHz can easily be achieved. The SiC762CD is packaged in Vishay Siliconix high performance PowerPAK MLP6 x 6 package. Compact co-packaging of components helps to reduce stray inductance, and hence increases efficiency. APPLICATIONS • CPU and GPU core voltage regulation • Server, computer, workstation, game console, graphics boards, PC SIC762CD APPLICATION DIAGRAMM 5V VIN VIN GH VDRV VCIN SMOD BOOT Gate Driver PWM Controller DSBL# PWM VSWH VO PHASE THDN SiC762CD PGND GL CGND Figure 1 Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 www.vishay.com 1 SiC762CD Vishay Siliconix ORDERING INFORMATION Part Number Package SiC762CD-T1-GE3 PowerPAK MLP66-40 SiC762DB Reference board ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Min. Max. VIN - 0.3 30 Switch Node Voltage (DC) VSW - 0.3 30 Drive Input Voltage VDRV - 0.3 7.0 Input Voltage Control Input Voltage Logic Pins Boot Voltage DC (referenced to CGND) Boot to Phase Voltage DC VCIN - 0.3 7.0 VPWM, VDSBL#, VTHDN, VSMOD - 0.3 VCIN + 0.3 VBS - 0.3 33 - 0.3 7 VBS_PH Boot to Phase Voltage < 200 ns TA Ambient Temperature Range - 0.3 9 - 40 125 TJ Maximum Junction Temperature 150 TSTG Storage Junction Temperature - 65 Soldering Peak Temperature Note: a. TA = 25 °C and all voltages referenced to PGND = CGND unless otherwise noted. 150 Unit V °C 260 Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min. Typ. Max. VIN 3.0 12 24 Control Input Voltage VCIN 4.5 5.5 Drive Input Voltage VDRV 4.5 5.5 Input Voltage Switch Node VSW_DC 12 Unit V 24 Note: a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to PGND = CGND unless otherwise noted. THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Power Dissipation at TPCB = 25 °C PD_25C 25 Maximum Power Dissipation at TPCB = 100 °C PD_100C 10 Thermal Resistance from Junction to Top Rth_J_TOP 15 Thermal Resistance from Junction to PCB Rth_J_PCB 5 www.vishay.com 2 Typ. Max. Unit W °C/W Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix ELECTRICAL SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VDSBL# = VSMOD = 5 V, VIN = 12 V, VVDRV = VVCIN = 5 V, TA = 25 °C Min. Typ.a Max. Unit Power Supplies VCIN Control Input Current Drive Input Current (Dynamic) IVCIN IVDRV VDSBL# = 0 V, no switching 21 VDSBL# = 5 V, no switching 350 VDSBL# = 5 V, fs = 300 kHz, D = 0.1 500 µA fs = 300 kHz, D = 0.1 14 18 fs = 1000 kHz, D = 0.1 40 54 VVCIN = 5 V, forward bias current 2 mA 0.60 0.75 mA Bootstrap Supply Bootstrap Switch Forward Voltage VBS Diode V Control Inputs (PWM, DSBL#, SMOD) PWM Rising Threshold Vth_pwm_r 3.5 3.9 4.2 PWM Falling Threshold Vth_pwm_f 0.8 1.0 1.2 Vth_tri_r 0.9 1.3 1.8 PWM Tristate Falling Threshold Vth_tri_f 3.4 3.7 4.0 PWM Tristate Rising Threshold Hysteresis Vhys_tri_r 280 PWM Tristate Falling Threshold Hysteresis Vhys_tri_f 180 PWM Tristate Rising Threshold Tristate Hold-Off Timeb PWM Input Current SMOD, DSBL# Logic Input Voltage tTSHO IPWM 250 VPWM = 0 V - 250 VLOGIC_LH Rising (low to high) VLOGIC_LH Falling (high to low) Pull Down Impedance RTHDN THDN Output Low VTHDNL mV 150 VPWM = 5 V ns µA 2.0 0.8 5 kΩ resistor pull-up to VCIN V V 40 Ω 0.04 V Protection Thermal Warning Flag Set 150 Thermal Warning Flag Clear 135 Thermal Warning Flag Hysteresis 15 Under Voltage Lockout VCIN Under Voltage Lockout VCIN VUVLO Under Voltage Lockout Hysteresis VCIN VUVLO_HYST High Side Gate Discharge Resistorb RHS_DSCRG Rising, on threshold Falling, off threshold VVDRV = VVCIN = 0 V; VIN = 12 V 3.3 2.3 2.95 °C 3.9 V 400 mV 20.2 kΩ Notes: a. Typical limits are established by characterization and are not production tested. b. Guaranteed by design. Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 www.vishay.com 3 SiC762CD Vishay Siliconix TIMING SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VVDRV = VVCIN = VDSBL# = 5 V, VVIN = 12 V, TA = 25 °C Turn Off Propagation Delay High Sidea td_off_HS 25 % of PWM to 90 % of GH Rise Time High Side tr_HS 10 % to 90 % of GH 10 Fall Time High Side tf_HS 90 % to 10 % of GH 8 td_off_LS 75 % of PWM to 90 % of GL Rise Time Low Side tr_LS 10 % to 90 % of GL Fall Time Low Side tf_LS 90 % to 10 % of GL 5 Dead Time Rising tdead_on 10 % of GL to 10 % of GH 27 Dead Time Falling tdead_off 10 % of GH to 10 % of GL 19 Turn Off Propagation Delay Low Sidea Min. Typ. Max. 10 20 35 10 37 45 Unit ns 6 Note: a. Min. and Max. are not 100 % production tested. TIMING DEFINITIONS PWM 75 % 25 % GH 90 % 90 % GL 10 % 10 % SW 1 2 3 4 Region 1 5 6 Definition Turn off propagation delay LS 7 8 Symbol td_off_LS 2 Fall time LS tf_LS 3 Dead time rising tdead_on 4 Rise time HS tr_HS 5 Turn off propagation delay HS td_off_HS 6 Fall time HS tf_HS 7 Dead time falling tdead_off 8 Rise time LS Note: GH is referenced to the high side source. GL is referenced to the low side source. www.vishay.com 4 tr_LS Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix SIC762CD BLOCK DIAGRAM VDRV VCIN GH UVLO VIN BOOT DSBL# Thermal Warning THDN PHASE AST CNTL DCM DETECT VSWH Tristate PWM PWM PGND SMOD GL CGND Figure 2 DETAILED OPERATIONAL DESCRIPTION PWM Input with Tristate Function The PWM input receives the PWM control signal from the VR controller IC. The PWM input is designed to be compatible with standard controllers using two state logic (H and L) and advanced controllers that incorporate Tristate logic (H, L and Tristate) on the PWM output. For two state logic, the PWM input operates as follows. When PWM is driven above Vth_pwm_r the low side is turned off and the high side is turned on. When PWM input is driven below Vth_pwm_f the high side turns off and the Low side turns on. For Tristate logic, the PWM input operates as above for driving the MOSFETs. However, there is an third state that is entered into as the PWM output of Tristate compatible controller enters its high impedance state during shut-down. The high impedance state of the controller's PWM output allows the SiC762CD to pull the PWM input into the Tristate region (see the Tristate Voltage Threshold Diagram below). If the PWM input stays in this region for the Tristate Hold-Off Period, tTSHO, both high side and low side MOSFETs are turned off. This function allows the VR phase to be disabled without negative output voltage swing caused by inductor ringing and saves a Schottky diode clamp. The PWM and Tristate regions are separated by hysteresis to prevent false triggering. The SiC762CD incorporates PWM voltage thresholds that are compatible with 5 V logic. Disable (DSBL#) In the low state, the DSBL# pin shuts down the driver IC and disables both high-side and low-side MOSFET. In this state, the standby current is minimized. If DSBL# is left unconnected an internal pull-down resistor will pull the pin down to CGND and shut down the IC. Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 Diode Emulation Mode (SMOD) Skip Mode When SMOD pin is low the diode emulation mode is enabled. This is a non-synchronous conversion mode that improves light load efficiency by reducing switching losses. Conducted losses that occur in synchronous buck regulators when inductor current is negative are also reduced. Circuitry in the gate drive IC detects when inductor current crosses zero and automatically stops switching the low side MOSFET. See SMOD Operation Diagram for additional details. This function can also be used for a pre-biased output voltage. If SMOD is left unconnected, an internal pull up resistor will pull the pin up to VCIN (Logic High) to disable the diode emulation function. Thermal Shutdown Warning (THDN) The THDN pin is an open drain signal that flags the presence of excessive junction temperature. Connect a maximum of 20 kΩ to pull this pin up to VCIN. An internal temperature sensor detects the junction temperature. The temperature threshold is 150 °C. When this junction temperature is exceeded the THDN flag is set. When the junction temperature drops below 135 °C the device will clear the THDN signal. The SiC762CD does not stop operation when the flag is set. The decision to shutdown must be made by an external thermal control function. Voltage Input (VIN) This is the power input to the drain of the high-side Power MOSFET. This pin is connected to the high power intermediate BUS rail. Switch Node (VSWH and PHASE) The Switch node VSWH is the circuit PWM regulated output. This is the output applied to the filter circuit to deliver the www.vishay.com 5 SiC762CD Vishay Siliconix regulated high output for the buck converter. The PHASE pin is internally connected to the switch node VSWH. This pin is to be used exclusively as the return pin for the BOOT capacitor. A 20.2 kΩ resistor is connected between GH and PHASE to provide a discharge path for the HS MOSFET in the event that VCIN goes to zero while VIN is still applied. Ground connections (CGND and PGND) PGND (power ground) should be externally connected to CGND (control signal ground). The layout of the Printed Circuit Board should be such that the inductance separating the CGND and PGND should be a minimum. Transient differences due to inductance effects between these two pins should not exceed 0.5 V. Control and Drive Supply Voltage Input (VDRV,VCIN) VCIN is the bias supply for the gate drive control IC. VDRV is the bias supply for the gate drivers. It is recommended to separate these pins through a resistor. This creates a low pass filtering effect to avoid coupling of high frequency gate drive noise into the IC. Bootstrap Circuit (BOOT) The internal bootstrap switch and an external bootstrap capacitor form a charge pump that supplies voltage to the BOOT pin. An integrated bootstrap diode is incorporated so that only an external capacitor is necessary to complete the bootstrap circuit. Connect a boot strap capacitor with one leg tied to BOOT pin and the other tied to PHASE pin. Shoot-Through Protection and Adaptive Dead Time (AST) The SiC762CD has an internal adaptive logic to avoid shoot through and optimize dead time. The shoot through protection ensures that both high-side and low-side MOSFET are not turned on the same time. The adaptive dead time control operates as follows. When PWM input goes high the LS gate starts to go low after a few ns. When this signal crosses through 1.7 V the logic to switch the HS gate on is activated. When PWM goes low the HS gate goes low. When the HS gate-to-source drive signal crosses through 1.7 V the logic to turn on the LS gate is activated. This feature helps to adjust dead time as gate transitions change with respect to output current and temperature. Under Voltage Lockout (UVLO) During the start up cycle, the UVLO disables the gate drive holding high-side and low-side MOSFET gate low until the input voltage rail has reached a point at which the logic circuitry can be safely activated. The SiC762CD also incorporates logic to clamp the gate drive signals to zero when the UVLO falling edge triggers the shutdown of the device. As an added precaution, a 20.2 kΩ resistor is connected between GH and PHASE to provide a discharge path for the HS MOSFET. DEVICE TRUTH TABLE DSBL# SMOD PWM GH GL Open X X L L L X X L L H (IL > 0), L (IL ≤ 0) H L L L H L H H L H H H H L H H L L H TRISTATE PWM VOLTAGE THRESHOLD DIAGRAM PWM Vth_pwm_r Vth_tri_f Vth_tri_r Vth_pwm_f GH t TSHO GL t TSHO Figure 3 www.vishay.com 6 Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix SMOD OPERATION DIAGRAM DSBL SMOD PWM GH IL = 0 IL > 0 GL VSW td(ON) td(OFF) Figure 4 31 VSWH 32 VSWH 33 VSWH 34 VSWH 35 VSWH 37 CGND 36 GL 39 DSBL# 38 THDN 40 PWM PIN CONFIGURATION 30 VSWH SMOD 1 VCIN 2 29 VSWH AGND P1 VDRV 3 28 PGND 27 PGND BOOT 4 CGND 5 26 PGND VSWH P3 GH 6 25 PGND 24 PGND PHASE 7 VIN P2 VIN 8 VIN 9 23 PGND 22 PGND 21 PGND VIN 10 20 PGND 19 PGND 18 PGND 17 PGND 15 VSWH 16 PGND 14 VIN 13 VIN 12 VIN 11 VIN Figure 5 - PowerPAK MLP 6 x 6 40P Pin Out - Top View PIN DESCRIPTION Pin Number Symbol 1 SMOD Description Disable low side gate operation. Active low. 2 VCIN This will be the bias supply input for control IC (5 V). 3 VDRV IC bias supply and gate drive supply voltage (5 V). 4 BOOT High side driver bootstrap voltage pin for external bootstrap capacitor. 5, 37, PAD1 CGND Control signal ground. It should be connected to PGND externally. All pins internally connected. 6 GH 7 PHASE Return pin for the HS bootstrap capacitor. Connect a 0.1 µF ceramic capacitor from this pin to the boot pin (4). 8 to 14, PAD2 15, 29 to 35, PAD3 16 to 28 VIN Input voltage for power stage. It is the drain of the high-side MOSFET. It is the phase node between high side MOSFET source and low side MOSFET drain. It should be connected to an output inductor. All pins internally connected. Power ground. VSWH PGND Gate signal output pin for high side MOSFET. Pin for monitoring. 36 GL 38 THDN Thermal shutdown open drain output. Use a 10K pull up resistor to VCIN. 39 DSBL# Disable pin. Active low. 40 PWM Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 Gate signal output pin for low side MOSFET. Pin for monitoring. PWM input logic signal. Compatible with Tristate controller function. www.vishay.com 7 SiC762CD Vishay Siliconix ELECTRICAL CHARACTERISTICS 1.0 20 18 0.8 0.6 IDRV (mA) ICIN (mA) 16 0.4 14 12 10 0.2 8 0.0 - 40 - 25 - 10 5 6 - 40 - 25 - 10 20 35 50 65 80 95 110 125 140 5 20 35 50 65 80 95 110 125 140 Temperature (°C) Temperature (°C) ICIN (mA) vs. Temperature at Frequency = 300 kHz D = 10 %, VCIN = VDRV = 5 V IDRV (mA) vs. Temperature at Frequency = 300 kHz D = 10 %, VCIN = VDRV = 5 V 1.3 4.4 4.2 PWM TSH (V) PWM TSH (V) 1.2 1.1 1.0 4.0 3.8 3.6 3.4 0.9 3.2 0.8 - 40 - 25 - 10 5 3.0 - 40 - 25 - 10 20 35 50 65 80 95 110 125 140 5 Temperature (°C) Temperature (°C) PWM Falling Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V PWM Rising Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V 1.6 1.80 1.5 1.75 1.70 DSBL TSH (V) 1.4 DSBL TSH (V) 20 35 50 65 80 95 110 125 140 1.3 1.2 1.1 1.65 1.60 1.55 1.50 1.0 1.45 0.9 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 140 Temperature (°C) DSBL Falling Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V www.vishay.com 8 1.40 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 140 Temperature (°C) DSBL Rising Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix ELECTRICAL CHARACTERISTICS 1.6 1.80 1.5 1.75 1.70 SMOD TSH (V) SMOD TSH (V) 1.4 1.3 1.2 1.1 1.65 1.60 1.55 1.50 1.0 1.45 0.9 - 40 - 25 - 10 5 1.40 - 40 - 25 - 10 20 35 50 65 80 95 110 125 140 5 20 35 50 65 80 95 110 125 140 Temperature (°C) Temperature (°C) SMOD Falling Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V SMOD Rising Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V 50 60 50 45 IDRV (mA) ICIN (mA) 40 30 40 35 20 30 10 0 - 40 - 25 - 10 5 25 - 40 - 25 - 10 20 35 50 65 80 95 110 125 140 5 20 35 50 65 80 95 110 125 140 Temperature (°C) Temperature (°C) ICIN + IDRV (mA) vs. Temperature at Frequency = 1 MHz D = 10 %, VCIN = VDRV = 5 V IDRV (mA) vs. Temperature at Frequency = 1 MHz D = 10 %, VCIN = VDRV = 5 V 4.4 1.6 4.2 1.5 4.0 PWM TSH (V) PWM TSH (V) 1.4 1.3 3.8 3.6 1.2 3.4 1.1 3.2 1.0 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 140 Temperature (°C) PWM Falling Tristate (V) vs. Temperature (°C) VCIN = VDRV = 5 V Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 3.0 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 140 Temperature (°C) PWM Rising Tristate Threshold (V) vs. Temperature (°C) VCIN = VDRV = 5 V www.vishay.com 9 SiC762CD Vishay Siliconix 2.5 2.5 2.3 2.3 2.1 2.1 1.9 1.9 DSBL TSH (V) DSBL TSH (V) ELECTRICAL CHARACTERISTICS 1.7 1.5 1.3 1.7 1.5 1.3 1.1 1.1 0.9 0.9 0.7 0.7 0.5 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 0.5 4.7 5.6 4.8 4.9 5.0 VCIN (V) 2.3 2.3 2.1 2.1 1.9 1.9 SMOD TSH (V) DSBL TSH (V) 2.5 1.7 1.5 1.3 0.9 0.7 0.7 5.2 5.6 1.3 0.9 5.1 5.5 1.5 1.1 5.0 5.4 1.7 1.1 4.9 5.3 DSBL Rising Threshold vs. VCIN 2.5 4.8 5.2 VCIN (V) DSBL Falling Threshold vs. VCIN 0.5 4.7 5.1 5.3 5.4 5.5 0.5 4.7 5.6 4.8 4.9 5.0 VCIN (V) 5.1 5.2 5.3 5.4 5.5 5.6 VCIN (V) SMOD Falling Threshold vs. VCIN SMOD Rising Threshold vs. VCIN 1.15 4.4 4.2 1.10 PWM TSH (V) PWM TSH (V) 4.0 1.05 1.00 3.8 3.6 3.4 0.95 3.2 0.90 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 VCIN (V) PWM Falling Threshold vs. VCIN www.vishay.com 10 5.5 5.6 3.0 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 VCIN (V) PWM Rising Threshold vs. VCIN Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix ELECTRICAL CHARACTERISTICS VDRV/VCIN: 2 V/div VDRV/VCIN: 2 V/div VO: 0.5 V/div VIN: 5 V/div VO: 0.5 V/div t: 2 ms/div PWM: 3 V/div Startup with VIN ramping up VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz DSBL#: 2 V/div PWM: 3 V/div t: 20 ms/div Power Off with VIN ramping down VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz VO: 0.5 V/div VO: 0.5 V/div VSWH: 5 V/div DSBL#: 2 V/div VSWH: 5 V/div t: 20 µs/div. t: 0.5 ms/div Enable with VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz VDRV/VCIN: 2 V/div Disable with VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz VDRV/VCIN: 2 V/div VIN: 5 V/div VIN: 5 V/div PWM: 3 V/div VO: 0.5 V/div PWM: 3 V/div VO: 0.5 V/div t: 50 µs/div PWM Start with VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 t: 500 µs/div PWM Turn-off with VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz www.vishay.com 11 SiC762CD Vishay Siliconix ELECTRICAL CHARACTERISTICS VIN: 5 V/div VIN: 5 V/div VDRV/VCIN: 2 V/div VDRV/VCIN: 2 V/div t: 2 ms/div VO: 0.5 V/div VO: 0.5 V/div PWM: 3 V/div PWM: 3 V/div t: 10 ms/div Startup with VDRV/VCIN ramping up VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz Power Off with VDRV/VCIN ramping down VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz GH: 10 V/div GH: 10 V/div GL: 5 V/div GL: 5 V/div VSWH: 8 V/div VSWH: 8 V/div IL: 4 A/div IL: 4 A/div t: 0.5 µs/div. Switching Waveforms with SMOD enabled VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz, IOUT = 1.5 A t: 0.5 µs/div. Switching Waveforms with SMOD disabled VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz, IOUT = 4 A PWM: 2 V/div PWM: 2 V/div GH: 5 V/div GH: 5 V/div VSWH: 5 V/div VSWH: 5 V/div GL: 2 V/div t: 10 ns/div. Switching Waveforms at PWM rising edge VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz, IOUT = 0 A www.vishay.com 12 GL: 2 V/div t: 10 ns/div Switching Waveforms at PWM falling edge VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz, IOUT = 0 A Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix ELECTRICAL CHARACTERISTICS PWM: 2 V/div PWM: 2 V/div GH: 5 V/div GH: 5 V/div VSWH: 5 V/div VSWH: 5 V/div GL: 2 V/div GL: 2 V/div t: 20 ns/div. Switching Waveforms at PWM rising edge VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz, IOUT = 30 A Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 t: 10 ns/div. Switching Waveforms at PWM falling edge VIN = 12 V, VOUT = 1.2 V, FS = 500 kHz, IOUT = 30 A www.vishay.com 13 SiC762CD Vishay Siliconix TYPICAL SYSTEM EFFICIENCY WITH SIC762CD 92 92 VIN = 12 V, VOUT = 1.2 V VIN = 19.5 V, VOUT = 1.2 V 90 90 300 kHz 88 400 kHz 88 400 kHz 84 500 kHz 82 Efficiency (%) Efficiency (%) 300 kHz 86 86 500 kHz 84 82 80 80 78 78 76 76 0 3 6 9 12 15 18 21 24 27 30 0 33 3 6 9 12 15 18 21 24 27 30 33 30 33 Load Current (A) Load Current (A) VIN = 12 V and 19.5 V, VOUT = 1.2 V, VDRV = VCIN = 5 V; No Air Flow IHLP5050FDERR33M01 Inductor L = 330 nH, DER = 0.83 mΩ Figure 6 - System Efficiency with SiC762 TYPICAL SYSTEM POWER LOSS WITH SIC762CD 12 12 VIN = 12 V, VOUT = 1.2 V VIN = 19.5 V, VOUT = 1.2 V 10 10 500 kHz 500 kHz 6 300 kHz 4 Power Loss (W) Power Loss (W) 400 kHz 8 8 400 kHz 6 4 300 kHz 2 2 0 0 0 3 6 9 12 15 18 21 24 27 30 33 0 3 Load Current (A) 6 9 12 15 18 21 24 27 Load Current (A) VIN = 12 V and 19.5 V, VOUT = 1.2 V, VDRV = VCIN = 5 V; No Air Flow IHLP5050FDERR33M01 Inductor L = 330 nH, DER = 0.83 mΩ Figure 7 - System Power Loss with SiC762 www.vishay.com 14 Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 SiC762CD Vishay Siliconix PACKAGE DIMENSIONS K1 2x 5 6 Pin 1 dot by marking 0.10 C A D A K2 0.08 C A A1 Pin #1 dent D2-1 0.41 A2 31 40 2x 30 1 21 10 E2-3 E2-1 4 E 0.10 M C A B MLP66-40 (6 mm x 6 mm) (Nd-1)X e ref. E2-2 e 0.10 C B B 20 D2-2 D2-3 11 C (Nd-1)X e ref. Top View DIM Bottom View Side View MILLIMETERS INCHES Min. Nom. Max. Min. Nom. Max. A(8) 0.70 0.75 0.80 0.027 0.029 0.031 A1 0.00 - 0.05 0.000 - 0.002 A2 b(4) 0.20 ref. 0.20 0.25 0.008 ref. 0.30 0.078 0.098 D 6.00 BSC 0.236 BSC e 0.50 BSC 0.019 BSC E 6.00 BSC L 0.35 0.40 0.011 0.236 BSC 0.45 0.013 0.015 N(3) 40 40 Nd(3) 10 10 Ne(3) 10 0.017 10 D2-1 1.45 1.50 1.55 0.057 0.059 0.061 D2-2 1.45 1.50 1.55 0.057 0.059 0.061 D2-3 2.35 2.40 2.45 0.095 0.094 0.096 E2-1 4.35 4.40 4.45 0.171 0.173 0.175 E2-2 1.95 2.00 2.05 0.076 0.078 0.080 E2-3 1.95 2.00 2.05 0.076 0.078 0.080 K1 0.73 BSC 0.028 BSC K2 0.21 BSC 0.008 BSC Notes: 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5M-1994. 3. N is the number of terminals. Nd is the number of terminals in X-direction and Ne is the number of terminals in Y-direction . 4. Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip. 5. The pin #1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body . 6. Exact shape and size of this feature is optional. 7. Package warpage max. 0.08 mm. 8. Applied only for terminals. Figure 8 - PowerPAK MLP 66-40 Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 www.vishay.com 15 SiC762CD Vishay Siliconix LAND PATTERN DIMENSIONS 2.200 2.200 0.200 0.276 0.276 0.025 40 0.100 1.700 0.025 1 40 0.100 0.100 0.320 0.310 2.600 0.100 0.100 0.100 0.600 1 0.100 0.100 0.100 4.600 0.100 Figure 9 - PowerPAK MLP 66-40 TAPE AND REEL CARRIER TAPE DIMENSIONS + 0.1 Ø 1.5 - 0.0 12.00 Ø 1.50 min. 2.00 ± 0.10 see note 3 0.30 ± 0.05 1.75 ± 0.1 4.00 see note 1 A R 0.3 max. 7.5 ± 0.1 see note 3 Bo 16.0 ± 0.3 A Ko Ao 0.25 Section A-A Ao = 6.30 R 0.25 Bo = 6.30 Ko = 1.10 Notes: 1. 10 sprocket hole pitch cumulative tolerance ± 0.2. 2. Camber in compliance with EIA 481. 3. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. Figure 10 - PowerPAK MLP 66-40 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65727. www.vishay.com 16 Document Number: 65727 S10-0275-Rev. A, 08-Feb-10 Package Information Vishay Siliconix PowerPAK® MLP66-40 CASE OUTLINE K1 2x 5 6 Pin 1 dot by marking 0.10 C A D A K2 0.08 C A A1 Pin #1 dent D2-1 0.41 A2 31 40 2x 30 1 21 10 E2-3 E2-1 4 E 0.10 M C A B MLP66-40 (6 mm x 6 mm) (Nd-1)X e ref. E2-2 e 0.10 C B B 20 D2-2 D2-3 11 C (Nd-1)X e ref. Top View DIM. Bottom View Side View MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A (8) 0.70 0.75 0.80 0.027 0.029 0.031 A1 0.00 - 0.05 0.000 - 0.002 A2 b (4) 0.20 ref. 0.20 0.25 0.008 ref. 0.30 0.078 0.098 D 6.00 BSC 0.236 BSC e 0.50 BSC 0.019 BSC E 6.00 BSC L 0.35 0.40 0.011 0.236 BSC 0.45 0.013 0.015 N (3) 40 40 Nd (3) 10 10 Ne (3) 10 0.017 10 D2-1 1.45 1.50 1.55 0.057 0.059 0.061 D2-2 1.45 1.50 1.55 0.057 0.059 0.061 D2-3 2.35 2.40 2.45 0.095 0.094 0.096 E2-1 4.35 4.40 4.45 0.171 0.173 0.175 E2-2 1.95 2.00 2.05 0.076 0.078 0.080 E2-3 1.95 2.00 2.05 0.076 0.078 0.080 K1 0.73 BSC 0.028 BSC K2 0.21 BSC 0.008 BSC ECN: T09-0195-Rev. A, 04-May-09 DWG: 5986 Notes 1. Use millimeters as the primary measurement 2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994 3. N is the number of terminals. Nd is the number of terminals in X-direction and Ne is the number of terminals in Y-direction 4. Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip 5. The pin #1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body 6. Exact shape and size of this feature is optional 7. Package warpage max. 0.08 mm 8. Applied only for terminals Document Number: 64846 04-May-09 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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