NE Central W TM Semiconductor Corp. CMST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general purpose and switching applications. SUPER mini TM SOT-323 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD 75 40 6.0 600 250 UNITS V V V mA mW TJ,Tstg ΘJA -65 to +150 500 oC oC/W ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO IEBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=60V VCB=60V, TA=125oC VEB=3.0V VCE=60V, VEB=3.0V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA MIN MAX 10 10 10 10 75 40 6.0 0.6 35 50 75 246 0.3 1.0 1.2 2.0 UNITS nA µA nA nA V V V V V V V SYMBOL hFE hFE hFE fT Cob Cib hie hie hre hre hfe hfe hoe hoe rb’Cc NF td tr ts tf TEST CONDITIONS VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA MIN 100 50 40 300 2.0 0.25 50 75 5.0 25 MAX 300 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 10 25 225 60 UNITS MHz pF pF kΩ kΩ x10-4 x10 -4 µmhos µmhos ps dB ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR 247 R2 R1