CENTRAL CMXT2207

Central
CMXT2207
SURFACE MOUNT
SUPERmini™
DUAL COMPLEMENTARY
SILICON TRANSISTOR
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, designed for
small signal general purpose and switching applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
ΘJA
NPN
PNP
75
40
6.0
60
60
5.0
600
350
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=50V
10
ICBO
VCB=60V, TA=125°C
10
ICBO
VCB=50V, TA=125°C
10
IEBO
VEB=3.0V
10
ICEV
VCE=60V, VEB=3.0V
10
ICEV
VCE=30V, VBE=0.5V
50
BVCBO
IC=10µA
75
60
BVCEO
IC=10mA
40
60
BVEBO
IE=10µA
6.0
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.0
1.6
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.0
2.6
hFE
VCE=10V, IC=0.1mA
35
75
hFE
VCE=10V, IC=1.0mA
50
100
hFE
VCE=10V, IC=10mA
75
100
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
50
fT
VCE=20V, IC=20mA, f=100MHz
300
fT
VCE=20V, IC=50mA, f=100MHz
200
UNITS
nA
nA
µA
µA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
R2 (06-August 2003)
Central
TM
Semiconductor Corp.
CMXT2207
SURFACE MOUNT
SUPERmini™
DUAL COMPLEMENTARY
SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
PNP
NPN
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
Cib
VEB=2.0V, IC=0, f=1.0MHz
30
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
4.0
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
40
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
UNITS
pF
pF
pF
kΩ
kΩ
x10-4
x10-4
µmhos
µmhos
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-26 CASE - MECHANICAL OUTLINE
6
5
4
Q2
Q1
1
2
3
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: X07
R2 (06-August 2003)