PROCESS Central CP704 Semiconductor Corp. Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.7 X 3.7 MILS Emitter Bonding Pad Area 4.2 X 4.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 23,450 PRINCIPAL DEVICE TYPES MPSA55 MPSA56 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM R1 (15 -April 2005) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 PROCESS CP704 Typical Electrical Characteristics R1 (15 -April 2005)