KSB906 KSB906 Low Frequency Power Amplifier • Low Collector- Emitter Saturation Voltage • Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 60 Units V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -3 A IB Base Current - 0.5 A W PC Collector Dissipation (TC=25°C) 20 PC Collector Dissipation (Ta=25°C) 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = - 50mA, IB = 0 Min. - 60 Typ. Max. Units V ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 100 µA IEBO Emitter Cut-off Current VEB = - 7V, IC = 0 - 100 µA hFE1 hFE2 DC Current Gain VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A 60 20 200 VCE(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A -1 - 1.7 V VBE(on) Base-Emitter ON Voltage VCE = - 5V, IC = - 0.1A -1 - 1.5 V fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.5A 9 MHz Cob Output Capacitance VCB = - 10V, f = 1MHz 150 pF tON Turn ON Time 0.4 µs tSTG Storage Time 1.7 µs tF Fall Time VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30Ω 0.5 µs hFE Classification Classification O Y hFE 60 ~ 120 100 ~ 200 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB906 Typical Characteristics -5.0 1000 -4.0 -3.5 -8 I B= -3.0 0m A A 70m I B=- IB=-60mA IB=-50mA IB=-40mA IB=-30mA -2.5 -2.0 -1.5 IB=-20mA -1.0 IB=-10mA hFE, DC CURRENT GAIN IC(A), COLLECTOR CURRENT VCE=-5V EMITTER COMMON TC=25℃ -4.5 100 10 -0.5 -0.0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 1 -0.01 -5.0 -0.1 V CE(V), COLLECTOR-EMITTER VOLTAGE -10 IC(mA), COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -3.0 -10 VCE =-5V IC =10IB -2.5 IC(A), COLLECTOR CURRENT VCE(SAT)(V), SATURATION VOLTAGE -1 -1 -0.1 -0.01 -0.01 -0.1 -1 -2.0 -1.5 -1.0 -0.5 -0.0 -0.0 -10 -0.2 IC(A), COLLECTOR CURRENT -0.4 -0.6 -0.8 -1.0 -1.2 VBE (V), BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 32 -10 IC MAX (PULSE) s PD(W), POWER DISSIPATION s 1m ms 10 0m 10 IC(A), COLLECTOR CURRENT 28 IC MAX DC DC -1 -0.1 24 20 16 12 8 4 0 -1 -10 VCE(V). COLLECTOR EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation -100 0 25 50 75 100 125 150 175 TC(℃), CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 KSB906 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3