KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 Value 30 45 60 80 Units V V V V VEBO Emitter- Base Voltage 5 IC Collector Current (DC) 10 A ICP *Collector Current (Pulse) 20 A V PC Collector Dissipation (TC=25°C) 50 W PC Collector Dissipation (Ta=25°C) 1.67 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = Rated VCEO, VEB = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 VCE = 1V, IC = 2A VCE(sat) *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 Min. Typ. *Base-Emitter Saturation Voltage IC = 8A, IB = 0.8A fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Cob Output Capacitance tON Turn ON Time tSTG Storage Time tF Fall Time Units µA 100 µA 1 1 V V 35 60 IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A VBE (sat) Max. 10 1.5 V 50 MHz VCB = 10V, f = 1MHz 130 pF VCC =20V, IC = 5A IB1 = - IB2 = 0.5A 300 ns 500 ns 140 ns * Pulse test: PW≤300µs, Duty cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE44H Series VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 1V 100 10 1 0.01 0.1 1 10 10 IC = 10 IB 1 V BE(sat) 0.1 V CE(sat) 0.01 0.01 IC[A], COLLECTOR CURRENT 0.1 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE DC s 1µ IC[A], COLLECTOR CURRENT 100 10 s 1m Cob[pF], CAPACITANCE f=100MHZ 1 44H 1,2 44H 4,5 44H 7,8 44H 10,11 10µs 100µs 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 60 PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE44H Series Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3