KSE5020 KSE5020 Feature • High Voltage, High Quality High Speed Switching : tF=0.1µs • WIDE SOA TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current (DC) PC Collector Dissipation (TC=25°C) 1 A 30 W TJ TSTG Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 500 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, RBE =∞ BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V 7 V 500 V 15 8 50 Cob Output Capacitance VCB = 10V, f = 1MHz 50 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.3A 18 MHz tON Turn ON Time tS Storage Time tF Fall Time VCC = 200V 5IB1 = -2.5IB2=IC=2A RL = 100Ω 0.5 µs 3 µs 0.3 µs hFE Classification Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE5020 Typical Characteristics 1000 5.0 4.0 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 4.5 3.5 IB=500mA 3.0 IB=400mA IB=300mA IB=200mA 2.5 2.0 1.5 IB=100mA 1.0 IB=50mA 100 10 IB=20mA 0.5 IB=0 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 4.0 10 IC =5IB VCE=5V 3.5 IC[A], COLLECTOR CURRENT VBE(sat),VCE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 0.1 1 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 10 IC[A], COLLECTOR CURRENT 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Baser-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 tSTG[us], STORAGE TIME tON[us], TURN ON TIME tF[us], FALL TIME VCC=200V IC=5IB1=-2.5IB2 tSTG 1 tON tF 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Turn On Time ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE5020 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3