BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD233 : BD235 : BD237 Value 45 60 100 Units V V V VCEO Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 80 V V V VCER Collector-Emitter Voltage : BD233 : BD235 : BD237 45 60 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 6 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICBO Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 45 60 80 Units V V V Collector Cut-off Current : BD233 : BD235 : BD237 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V, IE = 0 100 100 100 µA µA µA 1 mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 2V, IC = 150mA VCE = 2V, IC = 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 0.6 V VBE(on) * Base-Emitter ON Voltage VCE = 2V, IC = 1A 1.3 V fT Current Gain Bandwidth Product VCE = 10V, IC = 250mA 40 25 3 MHz * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD233/235/237 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN V CE = 2V 100 10 1 0.01 0.1 1 10 IC = 10 IB V BE(sat) 1 V CE(sat) 0.1 0.01 0.1 1 10 10 IC [A], COLLECTOR CURRENT I C[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 40 10 10µ s IC MAX. (Pulsed) µs PC[W], POWER DISSIPATION 0 10 1m IC MAX. (Continuous) s DC 1 BD235 0.1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation BD237 1 BD233 IC[A], COLLECTOR CURRENT 35 100 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 4. Power Derating Rev. A1, June 2001 BD233/235/237 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3