KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 TO-220 B E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1200 Units V V CEO VEBO Collector-Emitter Voltage 600 V Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 4 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C EAS Avalanche Energy(Tj=25°C) 2.5 mJ * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Junction to Ambient Rθja TL Characteristics Junction to Case Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds ©2001 Fairchild Semiconductor Corporation Rating 2.5 Unit °C/W 62.5 270 °C Rev. A2, August 2001 Symbol BVCBO Parameter Collector-Base Breakdown Voltage BVCEO BVEBO ICES ICEO Test Condition IC=1mA, IE=0 Min. 1200 Collector-Emitter Breakdown Voltage IC=5mA, IB=0 600 750 V Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.7 V Collector Cut-off Current VCES=1200V, VBE=0 TC=25°C 100 TC=125°C 500 VCE=600V, IB=0 TC=25°C 100 TC=125°C 500 Collector Cut-off Current Typ. 1350 IEBO Emitter Cut-off Current VEB=12V, IC=0 TC=25°C hFE DC Current Gain VCE=1V, IC=0.2A TC=25°C 15 TC=125°C 8 18 TC=25°C 4 6.4 TC=125°C VCE=1V, IC=1A VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Max. µA 40 3 4.7 VCE=2.5V, IC=0.5A TC=25°C 12 20 TC=125°C 6 12 IC=0.2A, IB=0.02A TC=25°C 0.31 0.8 V TC=125°C 0.54 1.1 V 30 IC=0.4A, IB=0.08A TC=25°C 0.15 0.6 V TC=125°C 0.23 1.0 V IC=1A, IB=0.2A TC=25°C 0.40 1.5 V TC=125°C 1.3 3.0 V 1.0 V IC=0.4A, IB=0.08A TC=25°C 0.77 TC=125°C 0.60 0.9 V IC=1A, IB=0.2A TC=25°C 0.83 1.2 V TC=125°C 0.70 1.0 V pF Cib Input Capacitance VEB=8V, IC=0, f=1MHz 385 500 Cob Output Capacitance VCB=10V, IE=0, f=1MHz 60 100 fT Current Gain Bandwidth Product IC=0.5A,VCE=10V 11 VF Diode Forward Voltage IF=0.2A ©2001 Fairchild Semiconductor Corporation µA µA 10 28 Units V TC=25°C 0.75 TC=125°C 0.59 IF=0.4A TC=25°C 0.80 TC=125°C 0.64 IF=1A TC=25°C 0.9 pF MHz 1.2 V 1.3 V 1.5 V V V Rev. A2, August 2001 KSC5502D/KSC5502DT Electrical Characteristics TC=25°C unless otherwise noted tfr Symbol Parameter Diode Froward Recvery Time (di/dt=10A/µs) VCE(DSAT) Dynamic Saturation Voltage Test Condition IF=0.2A IF=0.4A IF=1A Min Typ. 650 740 785 Max. Units ns ns ns IC=0.4A, IB1=80mA VCC=300V @ 1µs 7.2 @ 3µs 1.8 V V IC=1A, IB1=200mA VCC=300V @ 1µs 18 V @ 3µs 6 V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) tON tOFF tON tOFF Turn On Time Turn Off Time Turn On Time Turn Off Time IC=0.4A, IB1=80mA IB2=0.2A, VCC=300V RL = 750Ω IC=1A, IB1=160mA IB2=160mA, VCC=300V RL = 300Ω TC=25°C 175 TC=125°C 185 TC=25°C 2.1 TC=125°C 2.6 TC=25°C 240 TC=125°C 310 TC=25°C 3.7 TC=125°C 4.5 350 ns 3.0 µs ns µs 450 ns 5.0 µs ns µs INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF Storage Time Fall Time tC Cross-over Time tSTG Storage Time tF Fall Time tC Cross-over Time ©2001 Fairchild Semiconductor Corporation IC=0.4A, IB1=80mA IB2=0.2A, VZ=300V LC=200H IC=0.8A, IB1=160mA IB2=160mA, VCC=300V LC=200H TC=25°C 1.2 TC=125°C 1.5 TC=25°C 90 TC=125°C 65 TC=25°C 185 TC=125°C 145 TC=25°C 3.3 TC=125°C 3.75 TC=25°C 90 TC=125°C 160 TC=25°C 300 TC=125°C 570 µs 2.0 µs 200 ns 350 ns 4.5 µs ns ns µs 250 ns 600 ns ns ns Rev. A2, August 2001 KSC5502D/KSC5502DT Electrical Characteristics TC=25°C unless otherwise noted 3 V C E =1V 100 500m A 2 400m A 300m A 200m A I B =100m A 1 hFE, D C C U R R E N T G A IN IC[A ], C O L L E C T O R C U R R E N T 1A 900m A 800m A 700m A 600m A T J =125 ℃ T J =25 ℃ 10 0 0 1 2 3 4 5 6 1 1m 7 10m V C E [V ], C O L L E C T O R E M IT T E R V O L T A G E Figure 1. Static Characteristic 1 Figure 2. DC current Gain IC =10IB I C =5I B 10 VCE(sat)(V), VOLTAGE 10 VCE(sat)(V), VOLTAGE 100m I C [A], C O LLE C T O R C U R R E N T ) 1 T J =125 ℃ 1 T J =125 ℃ T J =25 ℃ T J =25 ℃ 0 .1 0.1 1m 1 0m 1 00 m 1 1m 10 m I C (A), C O LLE C T O R C U R R E N T 10 0m 1 I C (A), C O LLE C T O R C U R R E N T Figure 3. Collector-Emitter Saturation Voltage 2 Figure 4. Collector-Emitter Saturation Voltage 10 T J =25 ℃ I C =10I B VBE[V], VO LT A G E VC E[V], VO L T A G E 2.0A 1.5A 1.0A 1 0 1m 0.4A I C =0.2A 1 T J =25 ℃ T J =125 ℃ 10m 100m 1 0.1 1m 10m 100m 1 I B [A], BAS E C U R R EN T I C [A], C O L LE C T O R C U R R EN T Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics KSC5502D/KSC5502DT Typical Characteristics (Continued) 10 10 VFD[V ], V O L T A G E VBE[V ], V O L T A G E IC =5I B 1 T J =25℃ T J =125℃ 0.1 1m 10m 100m 1 T J =25℃ T J =125℃ 0.1 1m 1 10m I C [A ], C O LLE C T O R C U R R E N T 100m 1 I F D [A ], F O R W A R D C U R R E N T Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage 1000 C A PA C IT AN C E[p F ] 2000 F=1MHz C ib I C =5I B 1 =2I B 2 V C C =300V PW=20us tON[ns],T IM E 1000 900 800 700 100 C ob T J =125℃ 600 500 400 300 T J =25℃ 200 10 1 10 100 0.3 100 0.4 R E VE R SE VO LT A G E[V ] 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A], C O LLEC T O R C U R R E N T Figure 9. Collector Output Capacitance Figure 10. Resistive Switching Time, ton 5 4.5 2000 4 I C =5I B 1 =5I B 2 V c =300V PW=20us I C =5I B 1 =2I B 2 V C C =300V PW =20us 3.5 1000 900 800 700 tON(ns),TIM E tO N(u s),TIM E 3 2.5 2 T J =125 ℃ T J =125 ℃ 600 500 400 T J =25 ℃ 300 T J =25 ℃ 1.5 200 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A ], C O L L E C T O R C U R R E N T Figure 11. Resistive Switching Time, toff ©2001 Fairchild Semiconductor Corporation 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A], CO LLECT OR CU RRENT Figure 12. Resistive Switching Time, ton Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 7 3 6.5 IC =5I B 1 =5IB 2 V c =300V PW=20us 6 5.5 2.5 IC =5I B 1 =2I B 2 V C C =15V V Z =300V L C =200uH 5 tSTG(us),T IM E tO N(us),T IM E 4.5 T J =125 ℃ 4 3.5 T J =25 ℃ T J =125 ℃ 2 1.5 T J =25 ℃ 3 2.5 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 1 0.3 3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC [A], C O LLEC T O R C U R R E N T I C [A], C O LLEC T O R C U R R EN T Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tSTG 600 550 I C =5IB 1 =2IB 2 V C C =15V V Z =300V L C =200uH 500 450 400 350 tC[ns],T IM E tF(ns),T IM E 100 95 90 85 I C =5IB 1 =2I B 2 V C C =15V V Z =300V L C =200uH T J =25 ℃ 80 T J =125 ℃ 75 70 65 T J =125 ℃ 300 250 200 60 T J =25 ℃ 55 150 50 45 100 0.3 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 0.4 I C [A ], C O LLEC T O R C U R R EN T Figure 15. Inductive Switching Time, tF 1000 900 800 700 I C =5I B 1 =5I B 2 V C C =15V V Z =300V L C =200uH 600 500 T J =125 ℃ 0.7 0.8 0.9 1 2 3 I C =5IB 1 =5I B 2 V C C =15V V Z =300V L C =200uH 400 tF[ns],TIM E tSTG[u s],T IM E 4 0.6 Figure 16. Inductive Switching Time, tc 5 4.5 0.5 I C [A], C O LLEC T O R C U R R EN T 3.5 T J =25 ℃ 3 2.5 T J =125 ℃ 300 200 T J =25 ℃ 100 90 80 70 60 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A], C O L LEC T O R C U R R EN T Figure 17. Inductive Switching Time, tSTG ©2001 Fairchild Semiconductor Corporation 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A], CO LLECTOR C URRENT Figure 18. Inductive Switching Time, tF Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 2 IC =5I B 1 =5IB 2 V C C =15V V Z =300V L C =200uH 1000 900 800 700 I C =2IB 2 V C C =15V V Z =300V L C =200uH T J =125 ℃ IC =0.8A tST G, T IM E [u s] tSTG[ns],TIM E 2000 600 500 T J =25 ℃ 400 300 T J =25 ℃ T J =125 ℃ 1 200 I C =0.4A 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 4 5 6 7 I C [A], C O LLEC T O R C U R R EN T 8 9 10 11 12 13 14 h F E , F O R C E D G AIN Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tSTG 200 I C =2I B 2 V C C =15V V Z =300V L C =200uH IC =2I B 2 V C C =15V V Z =300V L C =200uH 80 I C =0.8A T J =125 ℃ 60 T J =25 ℃ IC =0.8A tC, T IM E[ns] tF, T IM E[ns] 160 T J =25 ℃ T J =125 ℃ 120 IC =0.4A I C =0.4A 40 80 4 5 6 7 8 9 10 11 12 13 14 4 5 6 7 h F E , F O R C ED G AIN 8 9 10 11 12 13 14 h F E , F O R C ED G AIN Figure 21. Inductive Switching Time, tF Figure 22. Inductive Switching Time, tc 60 10 5ms 1ms PC[W ], PO W ER DISSIPATIO N IC[A], CO LLECT OR CU RR ENT T C =25 ℃ 50us DC 1 0.1 50 40 30 20 10 0 0.01 10 100 1000 V C E [A], CO LLECT OR EM ITTER VO LTAG E Figure 23. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 200 T C (℃ ), CASE T EM PER ATU R E Figure 24. Power Derating Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 60 10 5ms 1ms PC[W ], PO W ER D IS SIP AT IO N IC[A], CO LLECT OR CU RR ENT T C =25 ℃ 50us DC 1 0.1 50 40 30 20 10 0 0.01 10 100 1000 V C E [A], CO LLECT OR EM ITTER VO LTAG E Figure 25. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 200 T C (℃ ), C A SE T EM P ER AT U R E Figure 26. Power Derating Rev. A2, August 2001 KSC5502D/KSC5502DT Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Package Demensions (Continued) D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3